T2 HIGH FREQUENCY TRANSISTOR Search Results

m lc 945

Abstract: transistor 9206 BFG590W marking code 3T3
Contextual Info: Product specification P hilips Sem iconductors BFG590W BFG590W/X; BFG590W/XR NPN 5 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG590W T1 • High transition frequency BFG590W/X T2 • Gold metallization ensures

Contextual Info: M ay 1997 MgLMicro Linear ML65T245 3.3V High Speed Octal Buffer Transceiver GEN ERAL D ESCRIPTION FEATURES The M L65 T2 45 is a non-inverting octal buffer transceiver. The high operating frequency 6 6 M H z driving a 50pF load and low propagation delay (2ns) make it ideal for

Contextual Info: M ay 1997 MgLMicro Linear ML65T244 3.3V High Speed Dual Quad Buffer/Line Driver GEN ERAL D ESCRIPTION FEATURES The M L65 T2 44 is a non-inverting dual quad buffer/line driver. The high operating frequency 6 6 M H z driving a 50pF load and low propagation delay (2ns) make it ideal

42568

Abstract: HN 17
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N P N Silicon Low N o ise T ransistors MRF2947AT1 ,T2 MRF2947RAT1 ,T2 Motorola’s MRF2947 device contains two high performance, low-noise NPN silicon bipolar transistors. This device has two 941 die housed in the high

circuit diagram electronic choke for tube light

Abstract: osram transistor Electronic ballast ELECTRONIC BALLAST transistor DIAGRAM 40 w electronic tube light choke Electronic ballast circuit diagram 230 v 20 w ELECTRONIC BALLAST 8W fluorescent lamp transistor Electronic ballast electronic 40 w tube light choke ANT016 rk2 zener
Contextual Info: TELEFUNKEN Semiconductors ANT016 Bipolar Power Transistors in Electronic Ballasts Selection Criteria and System Requirements Issue: 11. 95 ANT016 TELEFUNKEN Semiconductors Table of Contents Introduction .1

MRF2947RA

Abstract: MRF2947 MRF2947AT1 MRF2947RAT1 microlab SC-70ML
Contextual Info: MOTOROLA Order this document by MRF2947/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF2947AT1,T2 Low Noise Transistors MRF2947RAT1,T2 Motorola’s MRF2947 device contains two high performance, low–noise NPN silicon bipolar transistors. This device has two 941 die housed in the high

transisto ot 306

Abstract: 1147 x motorola
Contextual Info: MOTOROLA O rder this docum ent by MRF2947/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise Transistors M R F 2947A T 1 ,T 2 M R F 2947R A T 1 ,T 2 M otorola’s MRF2947 device contains two high performance, low -noise NPN silicon bipolar transistors. This device has two 941 die housed in the high

ST AN2349 PFC

Abstract: N27-E20 an2349 ptc c884 ba159 st make e20 220v EF20 TRANSFORMER EFD25/13 Voltage Regulator Circuit e20 220v 200V Zener Diode
Contextual Info: AN2349 Application note Simple cost-effective PFC using Bipolar Transistors for low-to-medium power HF Ballasts Introduction This note deals with the implementation of a Power Factor Correction PFC in a Discontinuous-mode Boost Converter where a PFC stage is achieved with a power bipolar

185t2

Abstract: bdy28 BF 184 184T2 BDY26 BDY27 185T2A 185T2B
Contextual Info: * B D Y 2 6 183 T2 *B D Y 2 7 184 12 *B D Y 28 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA TRANSISTORS NPN SILICIUM , MESA DIFFUSES ^ Preferred device Dispositif recommandé LF large signal power amplification 180 V 200 V BDY 26 , 183 T2 BDY 27 , 184 T2

TB6591FL

Abstract: diode bridge 4pin If06
Contextual Info: TOSHIBA TB6591FL Toshiba Bi-CMOS Integrated Circuit Silicon Monolithic Preliminary TB6591FL DC motor driver TB6591FL is a motor driver IC for DC which uses LDMOS with low ON-resistor for output transistors. 1 constant current control type bridge dirver circuit and 3 constant

BDY25

Abstract: BDY23 182T2 181T2 180T2 BDY24
Contextual Info: BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage

185T2B

Abstract: BDY28B 185t2 185T2A bdy27 BDY28C BDY28A 185T2C BDY28 183T2
Contextual Info: BDY26, 183 T2 BDY27, 184 T2 BDY28, 185 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage

181T2

Abstract: 182T2 180T2 BDY24 BDY23 BDY25 181T2 B
Contextual Info: BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage

T1 SL 100 NPN Transistor

Abstract: SL 100 NPN Transistor BULD50SL BULD50KC
Contextual Info: BULD50KC, BULD50SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts ● Integrated Fast trr Anti-Parallel Diode, Enhancing Reliability ● Diode trr Typically 1 µs

mrf154 amplifier

Abstract: on 5269 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF154 N–Channel Enhancement–Mode MOSFET Designed primarily for linear large–signal output stages in the 2.0 – 100 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics Output Power = 600 Watts

AN749

Abstract: 723 voltage regulator 600 Watt Mosfet Power Amplifier 1N4148 1N5357A MC1723 MRF154 MRF157 0.1 uf Ceramic disc Capacitors 104 mrf154 amplifier
Contextual Info: Order this document by MRF157/D SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics

527 MOSFET TRANSISTOR motorola

Abstract: RL1009-5820-97-D1 AN749 NIPPON CAPACITORS MC1723 application notes IC1 723 1N4148 1N5357A MC1723 MRF154
Contextual Info: MOTOROLA Order this document by MRF157/D SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics

igbt dimmer

Abstract: IGBT light DIMMER "reverse phase control" igbt dimmer reverse phase control igbt dimmer DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs light dimmer igbt STGP10N50 AN486 topologies pulse transformer driver IGBT APPLICATION LC filter dimmer Triac
Contextual Info: APPLICATION NOTE DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs by B. Maurice, L. Wuidart 1. INTRODUCTION Unlike the bipolar transistor, which is current driven, Power MOSFETs, with their insulated gates, are voltage driven. A basic knowledge of the principles

mrf154 amplifier

Abstract: AN749 103 Ceramic Disc Capacitors MRF157 NIPPON CAPACITORS mc1723 ic rf push pull mosfet power amplifier 1N4148 1N5357A MC1723
Contextual Info: MOTOROLA Order this document by MRF157/D SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Power Field Effect Transistor MRF157 N–Channel Enhancement Mode Designed primarily for linear large–signal output stages to 80 MHz. • Specified 50 Volts, 30 MHz Characteristics

FERRITE TRANSFORMER 500W

Abstract: RF Amplifier 500w 175 mhz arf450 500w class d amplifier
Contextual Info: ARF450 Common Source Push-Pull Pair ARF450 BeO RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 150V 500W 11405 120MHz The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.

Contextual Info: PD -94908A IRG4BC20MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Rugged: 10µsec short circuit capable at VGS=15V • Low VCE on for 4 to 10kHz applications • IGBT Co-packaged with ultra-soft-recovery antiparallel diode

Contextual Info: ARF450 Common Source Push-Pull Pair ARF450 Advanced Information - OTS BeO 11405 RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE 150V 500W 120MHz The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull

AN1370

Abstract: AN-1370 LM5034 LM5034EVAL si7866dp SOT-23 P-MOSFET optocoupler 8 pin configuration
Contextual Info: National Semiconductor Application Note 1370 Dennis Morgan February 2005 Introduction slope compensation, direct interface with opto-coupler transistor, and thermal shutdown. The LM5034EVAL evaluation board provides the power supply design engineer with a fully functional 200W dual interleaved DC-DC power switching regulator using forward/