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    T-75 HIGH VOLTAGE DIODE FIGURE Search Results

    T-75 HIGH VOLTAGE DIODE FIGURE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    T-75 HIGH VOLTAGE DIODE FIGURE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L6388

    Abstract: L6388D STL6388 L6388D013TR
    Text: L6388 HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER 1 FEATURES Figure 1. Package • HIGH VOLTAGE RAIL UP TO 600 V ■ dV/dt IMMUNITY ± 50 V/nsec IN FULL TEMPERATURE RANGE ■ DRIVER CURRENT CAPABILITY:400 mA SOURCE,650 mA SINK ■ SWITCHING TIMES 70/40 nsec RISE/FALL


    Original     		PDF L6388 L6388D L6388 L6388D STL6388 L6388D013TR

    IPW50R045CP

    Abstract: JESD22
    Text: IPW50R045CP CoolMOSTM Power Transistor Product Summary Features • Worldwide best R DS,on in TO247 • Lowest figure of merit RON x Qg V DS @Tjmax 550 V R DS on ,max 0.045 Ω 150 nC Q g,typ • Ultra low gate charge • Extreme dv/dt rated PG-TO247 • High peak current capability


    Original     		PDF IPW50R045CP PG-TO247 IPP50R045CP 5R045P IPW50R045CP JESD22

    RB715W

    Abstract: SC-75A
    Text: RB715W Diodes Shottky barrier diode RB715W zExternal dimensions Unit : mm zLead size figure (Unit : mm) 1.0 0.5 0.5 0.3±0.1 0.05 0.15±0.05 1.3 zFeatures 1) Ultra small mold type. (EMD3) 2) Low VF 3) High reliability. 0.7 1.6±0.2 0.7 0.7 (3)


    Original     		PDF RB715W OT-416 SC-75A RB715W SC-75A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet AEC-Q101 Qualified Shottky barrier diode RB715WFH Land size figure Unit : mm Dimensions (Unit : mm) 1.0 0.5 0.5 0.3±0.1 0.05 Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.7 1.6± 0.2 0.15±0.05


    Original     		PDF AEC-Q101 RB715WFH OT-416 SC-75A R1120A

    ISO7637

    Abstract: VNQ830PEP-E VNQ830PEPTR-E PowerSSO-24
    Text: VNQ830PEP-E QUAD CHANNEL HIGH SIDE DRIVER Table 1. General Features Figure 1. Package TYPE RDS on IOUT VCC VNQ830PEP-E 60 mΩ (*) 14 A (*) 36 V (*) Per channel CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS • ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION


    Original     		PDF VNQ830PEP-E PowerSSO-24 2002/95/EC VNQ830PEP-E ISO7637 VNQ830PEPTR-E PowerSSO-24

    RB481Y-90

    Abstract: SC-75A
    Text: RB481Y-90 Diodes Schottky barrier diode RB481Y-90 zApplications Low current rectification zDimensions Unit : mm zLand size figure (Unit : mm) 0.5 0.22±0.05 (3) 1.2±0.1 (4) 1.55 0.13±0.05 (1) zConstruction Silicon epitaxial planar 1.6±0.1 1.6±0.05 zFeatures


    Original     		PDF RB481Y-90 SC-75A RB481Y-90

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Schottky Barrier Diode RB481Y-90 Dimensions Unit : mm Applications Low current rectification Land size figure (Unit : mm) 0.5 0.22±0.05 (3) 1.2±0.1 (4) 1.55 0.13±0.05 Construction Silicon epitaxial planar (1) 0.5 1.6±0.1 1.6±0.05


    Original     		PDF RB481Y-90 SC-75A R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Shottky barrier diode RB715W Dimensions Unit : mm Land size figure (Unit : mm) 1.0 0.5 0.5 0.3±0.1 0.05 Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.7 1.6± 0.2 0.15±0.05 (3) 0～0.1 0.6


    Original     		PDF RB715W OT-416 SC-75A R1120A

    RB480Y

    Abstract: RB480Y-90 SC-75A
    Text: RB480Y-90 Diodes Schottky barrier diode RB480Y-90 zApplications Low current rectification zLand size figure Unit : mm zExternal dimensions (Unit : mm) 0.45 0.5 1.6±0.1 0.22±0.05 (3) 1.2±0.1 (4) zConstruction Silicon epitaxial planar 1.55 0.13±0.05 (1)


    Original     		PDF RB480Y-90 SC-75A RB480Y RB480Y-90

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Shottky barrier diode RB558W Dimensions Unit : mm Land size figure (Unit : mm) 1.0 0.5 0.5 0.3±0.1 0.05 Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.7 1.6±0.2 0.15± 0.05 1.3 Applications


    Original     		PDF RB558W OT-416 SC-75A R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet AEC-Q101 Qualified Schottky Barrier Diode RB557WFH Land size figure Unit : mm Dimensions (Unit : mm) 0.5 0.5 0.7 1.6± 0.2 0.3±0.1 0.05 Features 1)Ultra small mold type. (EMD3) 2)Low VF 3)High reliability 0.15±0.05 0.7 0.1Min


    Original     		PDF AEC-Q101 RB557WFH OT-416 SC-75A R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet AEC-Q101 Qualified Shottky barrier diode RB558WFH Land size figure Unit : mm Dimensions (Unit : mm) 1.0 0.5 0.5 0.3±0.1 0.05 Features 1) Ultra small power mold type. (EMD3) 2) Low IR 3) High reliability. 0.7 1.6±0.2 0.15± 0.05


    Original     		PDF AEC-Q101 RB558WFH OT-416 SC-75A R1120A

    RB480Y

    Abstract: RB480Y-90 SC-75A
    Text: RB480Y-90 Diodes Schottky barrier diode RB480Y-90 zApplications Low current rectification zDimensions Unit : mm zLand size figure (Unit : mm) 0.45 0.5 1.6±0.05 1.6±0.1 0.22±0.05 0.13±0.05 1.2±0.1 (3) zConstruction Silicon epitaxial planar (1) 1.6±0.1


    Original     		PDF RB480Y-90 SC-75A RB480Y RB480Y-90

    RB481Y-90

    Abstract: SC-75A
    Text: RB481Y-90 Diodes Schottky barrier diode RB481Y-90 zLand size figure Unit : mm zExternal dimensions (Unit : mm) 0.6 0.7 0.22±0.05 0.13±0.05 0.05 (3) 1.2±0.1 (4) (1) zConstruction Silicon epitaxial planar 1.6±0.1 zFeatures 1) Ultra small mold type. (EMD4)


    Original     		PDF RB481Y-90 SC-75A RB481Y-90

    RB557W

    Abstract: SC-75A
    Text: RB557W Diodes Schottky barrier diode RB557W zApplications General rectification zDimensions Unit : mm zLand size figure (Unit : mm) 0.5 0.5 0.3±0.1 0.05 zFeatures 1) Ultra small mold type. (EMD3) 2) Low VF 3) High reliability 0.7 1.6±0.2 0.15±0.05


    Original     		PDF RB557W OT-416 SC-75A RB557W SC-75A

    Untitled

    Abstract: No abstract text available
    Text: VNQ830PEP-E QUAD CHANNEL HIGH SIDE DRIVER TARGET SPECIFICATION Table 1. General Features Figure 1. Package TYPE RDS on IOUT VCC VNQ830PEP-E 60 mΩ (*) 14 A (*) 36 V (*) Per channel CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS • ON STATE OPEN LOAD DETECTION


    Original     		PDF VNQ830PEP-E PowerSSO-24 2002/95/EC VNQ830PEP-E

    gw20nc60vd

    Abstract: GW20NC60 GW20N schematic diagram UPS IGBT gw20nc60v GW20NC
    Text: STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGW20NC60VD 600 V < 2.5 V 30 A • ■ ■ ■ ■ OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY


    Original     		PDF STGW20NC60VD O-247 gw20nc60vd GW20NC60 GW20N schematic diagram UPS IGBT gw20nc60v GW20NC

    Untitled

    Abstract: No abstract text available
    Text: VNQ810PEP-E QUAD CHANNEL HIGH SIDE DRIVER PRELIMINARY DATA Table 1. General Features Figure 1. Package TYPE VCC RDS on Iout VNQ810PEP-E 36V 160mΩ 5A(∗) (*) Per channel CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS • ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION


    Original     		PDF VNQ810PEP-E PowerSSO-24 2002/95/EC VNQ810PEP-E

    gw20nc60vd

    Abstract: STGW20NC60VD GW20NC60 gw20nc60v GW20 ic MARKING QG
    Text: STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGW20NC60VD 600 V < 2.5 V 30 A • ■ ■ ■ ■ ■ ■ OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY


    Original     		PDF STGW20NC60VD O-247 gw20nc60vd STGW20NC60VD GW20NC60 gw20nc60v GW20 ic MARKING QG

    ISO7637

    Abstract: VNQ810PEP-E VNQ810PEPTR-E PowerSSO-24
    Text: VNQ810PEP-E QUAD CHANNEL HIGH SIDE DRIVER Table 1. General Features Figure 1. Package TYPE VCC RDS on Iout VNQ810PEP-E 36V 160mΩ 5A(∗) (*) Per channel CMOS COMPATIBLE INPUTS OPEN DRAIN STATUS OUTPUTS • ON STATE OPEN LOAD DETECTION ■ OFF STATE OPEN LOAD DETECTION


    Original     		PDF VNQ810PEP-E PowerSSO-24 2002/95/EC VNQ810PEP-E ISO7637 VNQ810PEPTR-E PowerSSO-24

    5r199p

    Abstract: D66A
    Text: IPP50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of -merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		PDF IPP50R199CP PG-TO220 IPP50R199CP PG-TO220 5R199P 5r199p D66A

    5R199P

    Abstract: 5R199 IPP50R199CP JESD22
    Text: IPP50R199CP CoolMOSTM Power Transistor Product Summary Features • Lowest figure-of -merit R ON x Qg • Ultra low gate charge V DS @Tjmax 550 V R DS on ,max 0.199 Ω 34 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Pb-free lead plating; RoHS compliant


    Original     		PDF IPP50R199CP PG-TO220 5R199P 5R199P 5R199 IPP50R199CP JESD22

    Untitled

    Abstract: No abstract text available
    Text: Application Notes APPLICATION NOTES FOR PIN DIODES The PIN diode structure consists of an Intrinsic "I" region sandwiched between heavily doped P+ and N+ regions as shown in Figure 1. The Intrinsic region is a very lightly doped, high resistivity material which controls the fun­


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    comb generator

    Abstract: No abstract text available
    Text: A-Mode Multiplier Diodes, Multichip A-Mode Diodes, A-Mode Chips Features • High Efficiency ■ High Power Handling ■ High Reliability Description than the period of the output frequency. Figures 2 and 3 are graphs which can be used to easily determine the


    OCR Scan     		PDF DVA6738-06 DVA6738-12 DVA6738-18 DVA6738-24 DVA6738-30 comb generator