T 88383 Search Results

Contextual Info: _B_ _A_ _C_ _D_ A±o.i A±0.1 Circuit No Circuit No 2 PIN 1 2 o CN PIN 2 Circuit No 1 Housing Circuit No R E C O M M E N D ED PCB LAYOUT G E N E R A L TO LE R A N C E + 0 . 0 5 WITH R E C O M M E N D ED PCB LAYOUT G E N E R A L T O LE R A N C E + 0 . 0 5 W ITHOUT BOSS

Contextual Info: A B I C D E F NOTES: 1. MATERIAL: 1.1 HOUSING: THERMOPLASTIC, HIGH TEMP., UL94V-0; 1.2 CONTACT: COPPER ALLOY 2. FINISH: 2.1 CONTACT: , 1.8±o. 1 1 1.8±o.i , 2.4±o.i SEE ACES P/N PLATING CODE 3. REFLOW SOLDER CAPABLE TO 260°C PER ACES SPEC. 4. SPEC. PLS. REFER TO P S-88383-xxxxx

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

MECL 10000

Abstract: MCM6830A transistor bf 175 MCM6605AL1 c3460 equivalent MCM6810A mcm6616
Contextual Info: GENERAL INFORMATION 1 RANDOM ACCESS MEMORIES RAM 2 READ ONLY MEMORIES (ROM) 3 M6800 SYSTEM MEMORIES APPLICATION NOTES 5 RELIABILITY INFORMATION 6 MEMORY INTERFACE i Volume 7 / Series A prepared by Technical Information Center Semiconductor Data Library MOS MEMORIES

PL 230 pioneer

Abstract: CP Clare v 10025 Taiwan Oasis Enterprise Co., LTD
Contextual Info: Sales Representatives and Distributors là PERÌCOM CORPORATE HEADQUARTERS Pericom Semiconductor Corporation 2380 Bering Drive, San Jose, CA95131 408 435-0800 408 435-1100 Fax SOUTHEASTERN OFFICE NORTHERN & SOUTHERN CENTRAL OFFICE Pericom 1143-B Executive Circle

443-721

Contextual Info: f¡J PER ICOM SALES REPRESENTATIVES AND DISTRIBUTORS 11 111 I I n 111 11tl1111 II1111111 I 11 I 111 11 i 111 111 111 III 1111 M11111 111 111 11111tl III11111111III 11EI 1111El 111 1111 M11 1111 P er ic o m C o r p o r a te H ea d q u a r ter s 2380 Bering Drive, San Jose, CA95131

sm6a

Abstract: SM6A27
Contextual Info: SM6A27 Vishay Semiconductors formerly General Semiconductor Surface Mount Automotive Transient Voltage Suppressor Zener Voltage 27V Peak Pulse Current 90A 10/10,000µs Peak Pulse Power 4600W (10/1000µs) DO-218AB 0.628(16.0) 0.592(15.0) 0.539(13.7) 0.524(13.3)

SM6A27

Abstract: ISO7637 ISO7637-2 t 88383 DO-218AB
Contextual Info: SM6A27 Vishay Semiconductors New Product formerly General Semiconductor Surface Mount Automotive Transient Voltage Suppressor Zener Voltage 27V Peak Pulse Current 90A 10/10,000µs Peak Pulse Power 4600W (10/1000µs) DO-218AB 0.628(16.0) 0.592(15.0) 0.539(13.7)

258-G

Contextual Info: SM6A27 Vishay Semiconductors New Product formerly General Semiconductor Surface Mount Automotive Transient Voltage Suppressor Zener Voltage 27V Peak Pulse Current 90A 10/10,000µs Peak Pulse Power 4600W (10/1000µs) DO-218AB 0.628(16.0) 0.592(15.0) 0.539(13.7)

nu-horizons

Abstract: Taiwan Oasis Enterprise Co., LTD bridge 3417
Contextual Info: f¡J PER/COM I II II I I I I I I I I I I I I I I I I I I II I I I I I I I I II I 11 I I I I I I I 1 I I I I I I I I I II Sales Representatives and Distributors I I I II I I I I I II I I II I I I I I I I I I I I I I I I I II I I I I I I I I I I I I I I I I 1 I I I I I

Contextual Info: SM6A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability & High Reliability Conditions FEATURES Patented PAR construction Low leakage current Low forward voltage drop High surge capability Meets ISO7637-2 surge spec

do-218ab

Abstract: IR 10D4 ISO7637 SM6A27 ISO7637-2 JESD22-B102D J-STD-002B DO218AB
Contextual Info: SM6A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability & High Reliability Conditions FEATURES Patented PAR construction Low leakage current Low forward voltage drop High surge capability Meets ISO7637-2 surge spec

Contextual Info: SM6A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Patented PAR construction Low leakage current Low forward voltage drop High surge capability Meets ISO7637-2 surge spec

Contextual Info: SM6A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES Patented PAR construction Low leakage current Low forward voltage drop High surge capability Meets ISO7637-2 surge spec

DO-218AB

Abstract: DO218AB SM6A27HE3 SM6A27 ISO7637 ISO7637-2 JESD22-B102 J-STD-002 ISO-7637-2
Contextual Info: SM6A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Low leakage current • Low forward voltage drop • High surge capability

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

LD33 VOLTAGE REGULATOR

Abstract: LD33 VOLTAGE REGULATOR 3.3v NIKKO NR 9600 LD33 regulator TRANSISTOR si 6822 LD50 VOLTAGE REGULATOR st LD33 smd code marking ld33 LD33 VOLTAGE REGULATOR ST ld33 st
Contextual Info: Shortform Catalog January 2004 Micrel Semiconductor • 1849 Fortune Drive • San Jose, CA 95131 • USA • tel +1 408 944-0800 • fax +1 408 944-1000 Micrel Shortform Catalog January 2004 2004 Micrel, Inc. The information furnished by Micrel, Inc., in this publication is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its use, nor any

SM6A27 DO-218AB

Contextual Info: SM6A27 Vishay General Semiconductor Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Patented PAR construction • Low leakage current • Low forward voltage drop • High surge capability

Contextual Info: SM6A27 Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability

Contextual Info: SM6A27 www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability

SM6A27 DO-218AB

Contextual Info: SM6A27 Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability

Contextual Info: SM6A27 www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability

Contextual Info: SM6A27 www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability

Contextual Info: SM6A27 www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 175 °C capability suitable for high reliability