T 326 TRANSISTOR Search Results

Contextual Info: SIEMENS BUZ 326 SIPMOS Power Transistor • N channel • Enhancement mode V’fOb'bS ' fé • Avalanche-rated 3 P in i Pin 2 Pin 3 D G S Type Vbs b ^bsion Package Ordering Code BUZ 326 400 V 10.5 A 0.5 Q T O -2 18 A A C67078-S3112-A2 Maximum Ratings

BU326

Abstract: Itron 326A BU326A BU 2578 SOLITRON DEVICES
Contextual Info: 8368602 SOL ITRON DEV ICES_I NC.jTl DE |fl3bfltiDa DD 01415 fi TÌà. Solitron D E V I C E S , INC. BU 326 BU 326A KPU SILICON POWER TRANSISTORS 6 AMPERES FEATURES: HIGH VOLTAGE FAST SWITCHING APPLIC A TIO N S SWITCHING MODE POWER SUPPLIES; CAN BE USED IN HORIZONTAL OUTPUT STAGE

2SB205

Abstract: GERMANIUM TRANSISTOR 2SC1468 1470 LM 2SC1470 2SB214 transformerless inverter 2SB206 ac-ac inverter 2sd206
Contextual Info: SHINDENGEN C A T . N o . E 326 100W ty p e high v o lta g e silic on p o w e r t r a n s i s t o r d e velope d n e w ly by S H IN ­ D E N G E N has such and V ceo = 3 6 0 V and 4 0 0V and AC 2 0 0V is r e c t if ie d d ir e c tly it can be used in the t r a n s f o r m e r le s s c ir c u it d i r e c t ly . T h e r e f o r e , it is

t 326 Transistor

Abstract: transistor TE 901 BUZ 14
Contextual Info: SIEMENS BUZ 326 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 326 Yds 400 V Id 10.5 A RoSlon 0.5 a Package Ordering Code TO-218AA C67078-S3112-A2 Maximum Ratings Parameter Symbol Values Continuous drain current

Contextual Info: SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type ^os BUZ 326 400 V ^ D S o n 10.5 A 0.5 a Maximum Ratings Parameter Continuous drain current, Tc = 27 C Pulsed drain current, 7C = 25 'C Avalanche current, limited by 7|max

C67078-S3112-A2

Abstract: J 326 t 326 Transistor
Contextual Info: BUZ 326 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 326 400 V 10.5 A 0.5 Ω TO-218 AA C67078-S3112-A2 Maximum Ratings Parameter Symbol Continuous drain current

sot 326

Abstract: 338 sot-23 NE68530 NE02139
Contextual Info: Low Noise Bipolar Transistors ' *- i NHG* Vcc 1111UM HF K ’ TYP ÛA TYP VCE V M Ì I TEST Part TYP (dB) fr TYP la tu t Hfis TYP 1c F a im SURFACE MOUNT PLASTIC NE68018 2.0 6 5 ’ 1.8 10.0 6 10 9.5 10.0 100 35 (SOT-343) 18 7 1.2 13.5 8 20 15.0 9.0 100

NE68018

Contextual Info: Low Noise Bipolar Transistors i ir * J * k ji W ft •i íU fÁ A Vac S I P W W NF - fi* ' VtP t y p m tm VCE V) (Sm I* Ic TYP (mA) (dB) tr W tfce iiS lS 1 PÉ TtP «m SURFACE MOUNT PLASTIC Faxon PÄ M w SS Daratnd Doc No. NE68018 2.0 6 5 1.8 10.0 6 10

NE68018

Abstract: 814T
Contextual Info: Medium Power Bipolar Transistors Pide MAQ fr I TEST Hfe Fax on dBM TYP (dBM) NE46100 2.0 12.5 100 19 27 10 100 9.8 5.5 100 250 Chip 00 D 314 NE46134 1.0 12.5 100 20.5 27.5 10 50 9 5.5 100 250 SOT-89 34 D 314 NE85634 1.0 10 40 13 22 10 40 11 6.5 120 100 SOT-89

TL 2272

Abstract: TL 2272 R sft 43 2SA993 138D 2SA1021 2SA982 2SA984 2SA985 2SC2262
Contextual Info: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

C67078-S3112-A2

Contextual Info: BUZ 326 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 326 400 V 10.5 A 0.5 Ω TO-218 AA C67078-S3112-A2 Maximum Ratings Parameter Symbol Continuous drain current

transistor tt 2206

Abstract: TT 2206 transistor transistor BU 102 t 326 Transistor transistor npn 326 BU326 W2206 326 Transistor
Contextual Info: ESC D Ml fl2 3 5 bOS G 0 G M Ô 4 M *] H S 1 E G , NPN Silicon Power Transistor BU 326 A - SIEMENS AKT IENÛ ES ELLS CH AF BU 326 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is

t 326 Transistor

Abstract: 326 Transistor BU 103 A transistor J 326 transistor BU 104 BU326 Q62702-U268 npn transistor w5
Contextual Info: E5C D Ml fl235bOS G0GMÔ4M 'i H S 1 E G , NPN Silicon Power Transistor BU 326 A -SIEMENS AKTIENÛESELLSCHAF BU 3 2 6 A is a triple diffused silicon N PN power switching transistor in TO 3 case 3 B 2 DIN 4 18 7 2 . It is outstanding for short switching times and high dielectric strength and is

BU326

Abstract: 326a
Contextual Info: BU326, BU326A >ÎL BU326, 326A NPN POWER TRANSISTORS Switching-Mode CTV Power Supply Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1.77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15 11.15 12,25 26,67 3.84 4,19 - PIN CONFIGURATION

IR 92 0151

Abstract: transistor BU 109 bu326 t 326 Transistor transistor BU 184
Contextual Info: MO TO RO LA SC XSTRS/R F 12E D | b3b?2S4 QGâMflQâ 2 | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 6 AM PERES HIGH VO LTAGE NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS . . . Designed far use in the switch-mode power supplies of colour television receivers.

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

WF VQE 13

Abstract: VQE 24 WF VQE 24 Wf vqe 14 vqe 23 VQE21 wf vqe 23 VQE24 WF VQE 12 vqe 13
Contextual Info: FUNKAMATEUR - Bauelementeinformation Anzeigen VD/VT Koppler Vergleichslisten Optoelektronik Anzeigen, IR-Dioden, Fotodioden- und Transistoren, Koppler Lichtemitteranzeigen o Farbe WF rot rot grün grün rot rot grün grün grün grün rot rot rot grün grün

TRANSISTOR BDX

Abstract: transistor BDX 62 A transistor BU 184 bdx 330 BU800 transistor BDX 65 transistor BU 109 darlington NPN 1000V 8a transistor ESM855 h21e BU 208
Contextual Info: SUPERSWITCH high power transistor M U 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV

55A400

Abstract: BUZ60
Contextual Info: Standard Power MOSFETs File Number BUZ 60 2260 N-Channel Enhancement-Mode Power Field-Effect Transistors 5 .5 A , 4 0 0 V N-CHANNEL ENHANCEMENT MODE fDSioni - 1 .0 f î Features: • SOA is pow er-dissipation lim ite d ■ N anosecond sw itching speeds ■ Linear transfer characteristics

MOS 6509

Abstract: 400v 50A DIODE
Contextual Info: UNITRODE CORP 9347963 TS UNITRODE CORP DGlDbbQ 1 920 10660 DT' ^ /i POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel UFN342 UFN343 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available, This efficient design achieves a very low Rosiom and a high transconductance.

NE24300

Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
Contextual Info: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator

928 606 402 00

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low

IRF 850

Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400

Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST T he N E 9 44 series o f NPN silicon epitaxial b ipo lar transisto rs is intended fo r use in ge ne ral purpose U H F o scilla to r and m ixer applicatio ns. It is su ita b le fo r au tom otive keyless entry