T 1829-1 TRANSISTOR Search Results

Contextual Info: i, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLV21 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLV21 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYL E

BLW76

Contextual Info: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 BLW76 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW76 is Designed for use in class-AB orclass-B operated high power transmitters in the H.F. and

Contextual Info: SIEMENS • Ö235b05 D0TDflb3 OTfl PNP Silicon Transistors for High Voltages SMBTA 92 SMBTA 93 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: SMBTA 42, SMBTA 43 NPN Type Marking Ordering Code (tape and reel)

bta 92

Abstract: BTA43 smbta93 93 MARKING CODE NPN S2e bta 05
Contextual Info: SIEMENS PNP Silicon Transistors for High Voltages SM BTA 92 SM BTA 93 • High breakdown voltage • Low coflector-emitter saturation voltage • Complementary types: S M B TA 42, SM BTA 43 NPN Type Marking Ordering Code (tape and reel) Pin (Contigui ation

UF2840G

Abstract: transistor C 245 b
Contextual Info: P i com pany RF MOSFET Power Transistor, 40W, 28V 100-500 MHZ UF2840G - A - B » Features f— H— j • N -Channel E n h an cem en t M ode D evice I I • DM OS Structure • Low er C ap acitan ces for B roadb an d O p eratio n

Contextual Info: • bbS3T31 00BSfl57 bQ5 H A P X N AMER PHILIPS/DISCRETE PMBT2907 PMBT2907A L.7E D _ J SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for medium power switching and general purpose amplifier applications in thick and thin-film circuits.

L7E transistor

Abstract: PMBT2907A PMBT2907 1N916
Contextual Info: • 1^53^31 002SÖS7 bD5 H A P X N AUER PHILIPS/DISCRETE PMBT2907 PMBT2907A L.7E D SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon transistors, in a microminiature plastic envelope, intended for medium power switching and general purpose amplifier applications in thick and thin-film circuits.

diode sg 87

Abstract: P302T SGSP101 GS3J P302 SGSP sgsp302 p102 capacitance SG 21 SP301
Contextual Info: S G S -T H O M S O N 73C D7E 17 282 | 7 ‘i 2 c] 2 3 ? 00177Ö 5 D Q | y . 0 7 iX V '' SGSP101/P102 * S ^ > SGSP201/P202 N-CHANNEL POWER MOS TRANSISTORS ’ sgsp 301/P30Z HIGH SPEED SW ITCHING APPLICATIONS These products are diffused multi-cell silicon gate

2SC1811

Abstract: 2SA896 138D 2SA1015
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors PHX6ND50E FREDFET, Avalanche energy rated_ FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics

t 1829

Abstract: buzer F14E E0C63158 E0C63256 E0C63358 S1C63557
Contextual Info: MF1106-03 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63557 Technical Manual S1C63557 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

buzer

Abstract: E0C63158 E0C63256 E0C63358 S1C63557
Contextual Info: MF1106-03 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63557 Technical Manual S1C63557 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

Contextual Info: MF1106-02 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63557 Technical Manual S1C63557 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

Motorola AN-546

Abstract: MRF460 an-546 motorola AN282A motorola application note AN-546 AN546 2N6368 2648A str 2652 motorola an-282a application
Contextual Info: 1EE D I b3b 72 54 00fl7fc.?fc> M | MOTOROLA SC MOTOROLA r'33-/r X STR S/R SEM ICO NDUCTOR TECHNICAL DATA MRF460 T h e R F L in e 40 W PEP - 3 0 MHz 2 RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed primarily for applications as a high-power linear ampli­

2160 transistor

Abstract: GSP7427 GSP7427-89 RO4003 C 2120 Y unmatched bare amplifier W-335 L381
Contextual Info: GSP7427-89 InGaP HBT Medium Power Amplifier Product Features Product Description ● 0. 1 to 6GHz Frequency Range The GSP7427-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 6GHz frequency range with 16 dB nominal matched gain at 2GHz. It also has superior Third Order

Contextual Info: SIEMENS Si-M M IC-Am plifier BGA 425 in SIEGET 25-Technologie Preliminary data • Multifunctional ease. 50 Cl block LNA / MIX • Unconditionally stable • Gain IS2-|I2 = 18.5 dB at 1.8 GHz (appl.1) gain IS21I2 = 22 dB at 1.8 GHz (appl.2) /p3out = +7 dBm at 1 8 GHz ( ^D=3V,/D=9.5mA)

Contextual Info: S G S-THOMSON Q7C D | 7 ^ ^ 2 3 7 u u s/m u s IN T E G R A T E D f f f f B e fv CIRCUIT QD14fleia fl I h c c /h c f « •• . 7929225 S G S : ^ ic S E M IC O N D U C T O R 0 8 9 0 6 i b ] j d T - V 3 '2 ^ / CORP EXPANDABLE 4-WIDE 2-INPUT A N D-O R-IN VERT GATE

ARM7500FE

Abstract: 08FF 0x032000F8
Contextual Info: 1 18 11 I/O Subsystems This chapter describes the ARM7500FE I/O subsystems. 18.1 Introduction 18-2 18.2 I/O Address Space Usage 18-3 18.3 Additional I/O Chip Select Decode Logic 18-4 18.4 Simple 8MHz I/O 18-4 18.5 Module I/O 18-11 18.6 PC Bus-style I/O 18-15

d1684

Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Contextual Info: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249

PXTA14

Abstract: BST60 PMBTA14 2PD601A PMBTA64
Contextual Info: SELECTION GUIDE page G eneral p urpose tra n sisto rs 24 H ig h -fre q u e n cy tra n sisto rs 28 B ro a d b a n d tra n sisto rs 29 S w itch in g tra n sisto rs 31 L o w -n o ise tra n sisto rs 33 H ig h -vo lta g e tra n sisto rs 34 F ie ld -e ffe ct tra n sisto rs

CERDIP 28 PINS

Abstract: harmonic 4200 serie BERV DFP28
Contextual Info: SÜEbôTS ÜÜDlbSS HSH TS 83510 BIPOLAR HIGH SPEED 10-BIT A/D CONVERTER DESCRIPTION The TS 83510 is a m onolithic sampling 10-bit A/D converter, designed for applications requiring high speed conversion, while m aintaining low power requirements. Combining on-board track-and-hold am plifier, internal refe­

TRANSISTOR MARKING YB 1L

Abstract: 2SK 2SA 2SC equivalent ON 4497 HF transistor 1B01F transistor 2sc 1586 i203 transistor transistor 2sk power amp transistor bc 2sk transistor 2sk 70 TBC846
Contextual Info: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type SSM < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip m e n t> VCEtMÜ MAX. hFE Type No. V CEO (V) NPN PNP 2SC 4738

2.4v OUTPUT regulator

Abstract: multiple output regulator ic car ignition circuit diagram SOT110 TDA3602
Contextual Info: Product specification Philips Semiconductors Multiple output voltage regulator TDA3602 FEATURES GENERAL DESCRIPTION • Two V p state controlled regulators REG1 and REG2 The TDA3602 is a m ultiple output voltage regulator, intended for use in car radios with or w ithout a

G034

Contextual Info: 4L*R ockw ell Semiconductor Systems RCV336DPÌ V.34 Data, V.17 Fax, Voice, Modem Data Pump Introduction Features The Rockwell RCV336DPi is a V.34 modem data pump family that supports data rates up to 33600 bps, fax operation up to 14400 bps, and voice coding/decoding