ISO-6358
Abstract: SYA3220-M5 SYA3120-C4 SYA7140-02 SYA5120-01 SYA5240 SYA7120-02 BCV58 SYA5120-C6 01MPA
Text: 5 Port Air Operated Valve Series SYA3000/5000/7000 How to Order Thread type A, B port size Thread piping Symbol Port size M5 M5 1 8 01 1 4 02 Applicable series SYA3000 SYA5000 SYA7000 One-touch fitting Metric size Symbol Port size Applicable series C4 One-touch fitting for ø4
|
Original
|
PDF
|
SYA3000/5000/7000
SYA3000
SYA5000
SYA7000
ISO-6358
SYA3220-M5
SYA3120-C4
SYA7140-02
SYA5120-01
SYA5240
SYA7120-02
BCV58
SYA5120-C6
01MPA
|
Untitled
Abstract: No abstract text available
Text: MMBT3906LT1 Preferred Device General Purpose Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO −40 Vdc Collector −Base Voltage VCBO
|
Original
|
PDF
|
MMBT3906LT1
|
AT86RF212 PCB
Abstract: AT86RF212 ATMEGA128RFA1 AT86RF230 schematic ieee electrical engineering projects AT86RF230 PCB AT86RF231 Atmel zigbee pcb atmel mcu altium
Text: Atmel AVR2010: MCU Wireless - Altium Design Package Features 8-bit Atmel Microcontrollers • MCU wireless transceiver schematic symbols and PCB footprints • Enable faster engineering design phases 1 Introduction Application Note This application note provides the Altium Designer schematic symbol and PCB
|
Original
|
PDF
|
AVR2010:
AT86RF230
8395B-AVR-11/11
AT86RF212 PCB
AT86RF212
ATMEGA128RFA1
AT86RF230 schematic
ieee electrical engineering projects
AT86RF230 PCB
AT86RF231
Atmel zigbee pcb
atmel mcu
altium
|
CMPSH10
Abstract: No abstract text available
Text: ON Semiconductort VHF/UHF Transistor MPSH10 NPN Silicon ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Total Device Dissipation @ TA = 25°C
|
Original
|
PDF
|
MPSH10
226AA)
CMPSH10
|
SKIM600GD126DLM
Abstract: No abstract text available
Text: SKiM 600GD126DLM . * +, - . Absolute Maximum Ratings Symbol Conditions IGBT / 0 1 * - 1 * 3,4 - :; Trench IGBT modules SKiM 600GD126DLM / * ?44 /> /0 B +4 /> / 0( C 3+44 / 3+44 / ,+6 5 * 74 - 893 :; * +< "=;> / *?44/
|
Original
|
PDF
|
600GD126DLM
SKIM600GD126DLM
|
Untitled
Abstract: No abstract text available
Text: SK150GB066T /. 0, 1 Absolute Maximum Ratings Symbol Conditions IGBT 23 89 4 ) /. 0 4 ) -7. 0 89) / 6+ ( -*. # ) 7+ 0 -+6 # *+ # : /+ ( 4 ) -/. 0 6 > ) /. 0 -*. # ) 7+ 0 ?. # *+ # ( ) *6+ (; (!2 < /+ (;
|
Original
|
PDF
|
SK150GB066T
|
Untitled
Abstract: No abstract text available
Text: SK75GB066T /. 0, 1 Absolute Maximum Ratings Symbol Conditions IGBT 23 89 4 ) /. 0 4 ) -7. 0 89) / 6+ ( 7- # ) 7+ 0 .6 # -.+ # : /+ ( 4 ) -/. 0 6 > ) /. 0 6/ # ) 7+ 0 ?7 # -.+ # *A. # ( ) *6+ (; (!2 < /+ (;
|
Original
|
PDF
|
SK75GB066T
|
Semikron Semitop 3 SK 10 GHR
Abstract: SK 10 GHR 123 2 SEMIKRON SK 10 GHR 123 2 ghr 11 SK 69 DIODE semitop 3 sk 10 ghr 123 semikron sk 10 ghr 123 i freewheeling diode 5A C333
Text: SK 10 GHR 123 I Absolute Maximum Ratings Symbol Conditions IGBT ;< ;&<) % %A # 2 89 :! # 2 89 >3 :? B / ? # 2 89 >3 :? #D Values Units /833 . 83 /@ // C8 88 ; ; 5 5 $ 63 111 E /93 : /> /8 C@ 86 5 5 $ 63 111 E /93
|
Original
|
PDF
|
|
PowerSO-10TM
Abstract: vn330sp
Text: VN330SP 8932 QUAD HIGH SIDE SMART POWER SOLID STATE RELAY General Features Type Vdemag(*) RDSon(*) Iout(*) VCC VN330SP(8932) VCC-55V 0.32Ω(*) 36V 1A PowerSO-10TM (*)Per channel. (*)at TJ = 85°C Features • OUTPUT CURRENT : 1A PER CHANNEL ■ DIGITAL INPUT CLAMPED AT 32V MINIMUM
|
Original
|
PDF
|
VN330SP
VCC-55V
PowerSO-10TM
PowerSO-10TM
|
VN330SP
Abstract: 8932
Text: VN330SP 8932 QUAD HIGH SIDE SMART POWER SOLID STATE RELAY Figure 1. Package Table 1. General Features Type Vdemag(*) RDSon (*) Iout (*) Vcc VN330SP(8932) VCC-55V 0.32Ω (*) 1A 36V (*) Per channel (*) at Tj=85°C • OUTPUT CURRENT: 1A PER CHANNEL ■ DIGITAL INPUTS CLAMPED AT 32V MINIMUM
|
Original
|
PDF
|
VN330SP
VCC-55V
PowerSO-10TM
8932
|
amplifier and comparator
Abstract: No abstract text available
Text: Rev.1.0 MINI ANALOG SERIES CMOS OPERATIONAL AMPLIFIER AND COMPARATOR S-893XXA Series The mini-analog series mounts a general purpose analog circuit within a small package. The S-893XXA Series is a IC having a CMOS operational amplifier and comparator in one package that can be driven by lower voltage
|
Original
|
PDF
|
S-893XXA
S-89310ACFN:
S-89320ACFN:
amplifier and comparator
|
tube 8933
Abstract: VN340SP
Text: VN340SP 8933 QUAD HIGH SIDE SMART POWER SOLID STATE RELAY TYPE Vdemag(*) RDSon (*) IOUT (*) VCC VN340SP(8933) VCC-55V 0.2Ω 1A 36 V (*) Per channel n OUTPUT CURRENT: 1A PER CHANNEL n DIGITAL I/O’s CLAMPED AT 32V MINIMUM VOLTAGE n PROTECTION AGAINST SHORTED LOAD
|
Original
|
PDF
|
VN340SP
VCC-55V
PowerSO-10TM
tube 8933
|
VN330SP
Abstract: 8932
Text: VN330SP 8932 QUAD HIGH SIDE SMART POWER SOLID STATE RELAY General Features Type Vdemag(*) RDSon(*) Iout(*) VCC VN330SP(8932) VCC-55V 0.32Ω(*) 36V 1A PowerSO-10TM (*)Per channel. (*)at TJ = 85°C Features Description • OUTPUT CURRENT : 1A PER CHANNEL
|
Original
|
PDF
|
VN330SP
VCC-55V
PowerSO-10TM
8932
|
2sd789
Abstract: No abstract text available
Text: 2SD789 Silicon NPN Epitaxial HITACHI Application • Low frequency power amplifier • Complementary pair with 2SB 740 Outline TO-92M OD | 1 1 3 J 2 2. Collector 3. Base 1 893 2SD789 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage
|
OCR Scan
|
PDF
|
2SD789
O-92M
2sd789
|
|
|
Untitled
Abstract: No abstract text available
Text: FLK052XV G a As F ET and HEMT Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current >d s s Test Conditions 200 300 mA - 100 - mS -1.0 -2.0 -3.5 V - V Vqs = 5V, Ids = 125mA Pinch-off Voltage vp Vos = 5V, ids =
|
OCR Scan
|
PDF
|
FLK052XV
125mA
10pcs.
|
3sk283
Abstract: Y025
Text: TOSHIBA 3SK283 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK283 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. Unit in mm MAXIMUM RATINGS Ta = 25°C SYMBOL VG1D0 v G2DO VG1S VG2S lGl <N Oi i— CHARACTERISTIC Gate 1-Drain Voltage Gate 2-Drain Voltage
|
OCR Scan
|
PDF
|
3SK283
800MHz
3sk283
Y025
|
FLC161
Abstract: No abstract text available
Text: FLC161WI C-Kand Power j ü A s ! ET s ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C IfeMn Symbol Condition Rating UMt Drain-Source Voltage Vd S 15 V Gate-Source Voltage Vg S -5 V 7.5 w °c °c Total Power Dissipation Pt Tc = 25°C Storage Temperature
|
OCR Scan
|
PDF
|
FLC161WI
Gate22
FLC161
|
zd2500
Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
Text: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS
|
OCR Scan
|
PDF
|
T-Ol-01
1001b.
254-turns
zd2500
WT 7520
CS 601 thyristor
TIC125
T920 thyristor
power diode 1000 volt 700 amper
thyristor 100 amper
diode lt 8220
cs 1694 eo
saa 1070
|
Untitled
Abstract: No abstract text available
Text: FLR056XV GaAs F E T and H E M T Chips ELECTRICAL CHARACTERISTI CS Ambient Temperature Ta=25° C Hem Test Conditions Symbol Saturated Drain Current IDSS - 100 - mS -1.0 -2.0 -3.5 V -4 - - V 25 26 - dBm 7.0 8.0 - dB - 29 - % - - 40 °C/W V q s = 3V, Id s = 125mA
|
OCR Scan
|
PDF
|
FLR056XV
125mA
18GHz
10pcs.
|
FLK102
Abstract: No abstract text available
Text: F LK102 XV GciAs F E T a nd H E M T Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current Test Conditions IDSS 400 600 mA - 200 - mS -1.0 -2.0 -3.5 V -5 - - V 29 30 - dBm 5.5 6.5 - dB - 31 - % V q s = 5V>!dS = 250mA
|
OCR Scan
|
PDF
|
LK102
250mA
10pes,
FLK102
|
MS505
Abstract: SM8505 data code
Text: S M8505 • ABSOLUTE MAXIMUM RATINGS Item Supply voltage Input voltage Output voltage Storage temperature * Symbol 1 Vdd - Vss -0.3 to +7.0 V Vm V Vour Vss-0 3 to Vdd +0.3 V T stg -40fco+125 °c Pw 250 mW Tsu> 260 “C 10 Sec Soldering time ■ Unit Vss-0.3 to Vdd +0.3
|
OCR Scan
|
PDF
|
SM8505
Vss-03
455kHz
SM8505
MS505
data code
|
Untitled
Abstract: No abstract text available
Text: 2N 4123 NPN SILICO N IV IIC R O PLANAR EPITAX IA L bvebo C o lle cto r C utoff C urrent JCB0 Em itter Cutoff Current ^EBO Base-Em itter S aturation Voltage DC Current Gain SYMBOL BVCB0 bvceo MICRO FI F P T P O N ir^ I TH l\ V / lllV < 0 1 .1 V . MIN 40 30
|
OCR Scan
|
PDF
|
O-92A
2N4123
2N4124
|
Untitled
Abstract: No abstract text available
Text: F U J I T S U M I C R O E L E C T R O N I C S T7 d F | 3 7 4 ^ 5 Q 0 Q 4 7 3 3 2 J~r-52-3 3 -U Preliminary FUJITSU Advanced Products O ctober 1966 Edition 1.0 • M B 89311 C M O S Floppy Disk Controller/Form atter D escription The Fujitsu MB89311 is a floppy disk controller/formatter FDC
|
OCR Scan
|
PDF
|
r-52-3
MB89311
MB8877A.
MB8877A
MB89311,
MB4107
T-52-33-11
B89311
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6246 Product Preview 512K x 8 Bit Static Random Access Memory WJ PACKAGE 400 MIL SOJ CASE 893-01 T h e M C M 6 2 4 6 is a 4 ,1 9 4 ,3 0 4 b it s ta tic ra n d o m a c c e s s m e m o ry o rg a n iz e d as 5 2 4 ,2 8 8 w o rd s o f 8 b its , fa b ric a te d u s in g h ig h -p e rfo rm a n c e s ilic o n -g a te C M O S te c h
|
OCR Scan
|
PDF
|
MCM6246
J20R2
J25R2
J35R2
MCM6246
|