SYM12 Search Results

"Power Diode"

Contextual Info: TO -22 0A B BYV410-600 Dual enhanced ultrafast power diode Rev. 2 — 5 August 2011 Product data sheet 1. Product profile 1.1 General description Dual enhanced ultrafast power diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits  High thermal cycling performance

Contextual Info: Surface Mount SYM-12+ SYM-12 Frequency Mixer Level 7 LO Power +7 dBm 5 to 1200 MHz Maximum Ratings Operating Temperature Features • low conversion loss, 6.5 dB typ. • excellent L-R isolation, 50 dB typ.; L-I, 46 dB typ. • IF response to DC -40°C to 85°C

Contextual Info: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 7 GHz FREQUENCY MHz MODEL NO. LO/RF IF fL-fU =JMS ASK-KK81 +7 dBm LO, up to +1 dBm RF CONVERSION LOSS dB LO-RF ISOLATION dB =RMS = LRMS-J IP3@ E LO-IF ISOLATION dB Total Mid-Band Range m L M U L M U σ Max. Max. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min.

SYM-12

Abstract: TTT167
Contextual Info: Surface Mount SYM-12+ SYM-12 Frequency Mixer Level 7 LO Power +7 dBm 5 to 1200 MHz Maximum Ratings Features Operating Temperature Storage Temperature • low conversion loss, 6.5 dB typ. • excellent L-R isolation, 50 dB typ.; L-I, 46 dB typ. • IF response to DC

FAR-F6KA-1G5754-L4AA

Abstract: SAFEA1G57KE0F00 EPCOS SAW Soldering Profile BGU7005 B9444 fm radio jammer FAR-F6KA-1G5754-L4AJ SAFEA1G57Kh0F00 LQW15A military jammer application
Contextual Info: BGU7005 SiGe:C Low Noise Amplifier MMIC for GPS Rev. 02 — 4 March 2010 Product data sheet 1. Product profile 1.1 General description The BGU7005 is a Low Noise Amplifier LNA for GPS receiver applications in a plastic leadless 6-pin, extremely small SOT886 package. The BGU7005 requires only one

J122 SMD TRANSISTOR

Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
Contextual Info: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

BU 0603

Abstract: 800B BLF6G15L 029-KW
Contextual Info: BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

Contextual Info: DF N1 01 0D -3 PBSS4260QA 60 V, 2 A NPN low VCEsat BISS transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible

Contextual Info: TO -2 20F NXPS20S100CX Dual power Schottky diode 30 January 2013 Product data sheet 1. General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a SOT186A TO-220F "full pack" plastic package.

TB-171

Contextual Info: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 7 GHz FREQUENCY MHz MODEL NO. LO/RF IF fL-fU =JMS ASK-KK81 +7 dBm LO, up to +1 dBm RF CONVERSION LOSS dB LO-RF ISOLATION dB =RMS = LRMS-J IP3@ E LO-IF ISOLATION dB Total Mid-Band Range m L M U L M U σ Max. Max. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min.

aly 2j

Abstract: LRMS-11A MCL RMS-2 ALY-3 ALY je
Contextual Info: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 4.3 GHz ALY u MODEL NO. FREQUENCY MHz LO/RF IF fL-fU LO-RF ISOLATION dB CONVERSION LOSS dB DC-400 DC-600 5.5 5.7 .15 .15 ASK-1-KK81 = ASK-2-KK81 1-600 1-1000 DC-600 DC-1000 5.58 6.79 .06 .10 7.0 8.0 8.5 9.8

Contextual Info: Mini-Circuits - Specification for Frequency Mixer - SYM-12 Frequency Mixers Notes: • +7dBm LO, up to +1 dBm RF • Absolute maximum power, voltage and current ratings: a. RF power, 50mW b. Peak IF current, 40mA print this page SYM-12 • For Surface Mount Environmental

Contextual Info: PHE13003C NPN power transistor Rev. 1 — 29 July 2010 Preliminary data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 TO-92 3 leads plastic package. 1.2 Features and benefits

Contextual Info: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits

Contextual Info: TO -2 20A B NXPS20H100C Dual power Schottky diode Rev. 1 — 20 April 2012 Preliminary data sheet 1. Product profile 1.1 General description Dual common cathode power Schottky diode designed for high frequency switched mode power supplies in a SOT78 TO-220AB plastic package.

Contextual Info: BLF7G22L-250PB; BLF7G22LS-250PB Power LDMOS transistor Rev. 01 — 16 December 2009 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1.

circuit radio

Abstract: Germanium power
Contextual Info: BGU7003W Wideband silicon germanium low-noise amplifier MMIC Rev. 1 — 30 August 2011 Product data sheet 1. Product profile 1.1 General description The BGU7003W MMIC is a wideband amplifier in SiGe:C technology for high speed, low-noise applications in a plastic, leadless 6 pin, extremely thin small outline SOT886

3590S-491-103

Abstract: 23n50 13N50
Contextual Info: BLF6G15L-40BRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

Contextual Info: BUJ303CD NPN power transistor 8 November 2012 Product data sheet 1. Product profile 1.1 General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits

circuit diagram wireless spy camera

Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Contextual Info: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint

Contextual Info: BYQ30E-200 Dual ultrafast power diode Rev. 4 — 1 September 2010 Product data sheet 1. Product profile 1.1 General description Dual ultrafast power diode in a SOT78 TO-220AB plastic package 1.2 Features and benefits ̈ Fast switching ̈ Low thermal resistance

Contextual Info: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance

Contextual Info: BLF7G27L-200PB Power LDMOS transistor Rev. 2 — 20 February 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance

Contextual Info: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.