S2389
Abstract: 277151
Text: o ORAWING MAOE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED, COPVRIGHT 19 LOC RELEASED FOR PUSLICATION sy AMP INCORPORATED. ALL INTERNATIONAL RIGHTS RESERVED. DIST 86 REVISIONS ZONE LTR DESCRIPTION REVISED PER 0720-0112-93 * P ✓ * ^ « OATE APPO
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P26463
US128A
PT1123
S2389
277151
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSU E 1 - SEPT 93_ FEATURES * 100 Volt VCE0 * 1 Amp continuous current * P,0,= 1Watt REFER TO ZTX453 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Collector-Base Voltage
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ZTX453
100ji
cH7Q57Ã
001G35S
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L2101
Abstract: CCIR601 CCIR-624 CCIR-656 PLCC68 SAA7111 SAA7151B SAA7184 L21017 L21010
Text: Philips Sem iconductors Prelim inary specification Digital video encoder DENC2-M6 SAA7184 FEATURES • M onolithic CMOS 5V device Quick Reference Data • Digital PAL/NTSC encoder SY M B O L • System Pixel Frequency: 13.5 MHz • Accepts MPEG decoded data.
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SAA7184
16-bit
SAA7111
71iafl2b
711002b
00T2ti41
110fl2fci
L2101
CCIR601
CCIR-624
CCIR-656
PLCC68
SAA7151B
SAA7184
L21017
L21010
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ca 361 e ic
Abstract: No abstract text available
Text: PNP SILICON PLANAR POWER TRANSISTOR ZBD957 PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * * * Fast switching Guaranteed hFE specified up to 1 A m p L o w collector-emitter saturation voltage T0126 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Collector-Base Voltage
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ZBD957
T0126
001G35S
ca 361 e ic
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 - F E B 94_ FEATURES * 80 Volt VCE0 * Gain of 50 at lc=100mA ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Collector-Base Voltage Collector-Em itter Voltage VALUE UN IT
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100mA
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR POWER TRANSISTOR PROVISIONAL DATASHEET ISSUE A - NOVEMBER 94 FEATURES * * * Fast switching Guaranteed hFE specified up to 2 A m p s Low collector-emitter saturation voltage ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L VALUE UNIT Collector-Base Voltage
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cH7Q57ß
001G35S
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 - MARCH 94_ FEATURES * 200 Volt VDS * R DS on = 2 5 £ î ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Continuous Drain Current at Tamlj=25°C VALUE UNIT < o (/> Drain-Source Voltage
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001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -FEB 94_ ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Drain-Source Voltage VALUE UNIT VDS 60 V Continuous Drain Current at Tamb= 25°C 'd 150 mA Pulsed Drain Current *om 1 A Gate Source Voltage
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001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2- NOVEMBER 94 ABSOLUTE M A XIM U M RATINGS. PARAMETER SY M B O L Collector-Emitter Voltage VALUE ^CES Continuous Drain Current Pulsed Drain Current UNIT 60 V 0.2 A ^DM 0.5 A Gate Source Vootage V qs ±40
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001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 200 Volt V DS * RDS on =10« * Low threshold APPLICATIONS * Telephone handsets REFER TO ZVNL120A FOR GRAPHS ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAM ETER
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ZVNL120A
cH7Q57Ã
001G35S
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diode sy 715
Abstract: No abstract text available
Text: SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ZDX3F ZDX4F ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Repetitive Peak R everse Voltage V RRM Average Rectified Forw ard Current Non-Repetitive Peak Forw ard Current t=1ns ZD X 3F
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cH7Q57Ã
001G35S
diode sy 715
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR IS S U E 2 -M A R C H 94_ FEATURES * 15 Volt V CE0 * fT=500 MH z ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Collector-Base Voltage Collector-Emitter Voltage VALUE UNIT
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001G35S
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 - MARCH 94_ FEATURES * 200 Volt V DS * Boston =8°n ABSOLUTE M A XIM U M RATINGS. PARAMETER SY M B O L Drain-Source Voltage V DS VALUE UNIT -200 V Continuous Drain Current atTamly=250C
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cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT549 ISSUE 1 - SEPT 93 FEATURES * 30 Volt V,CEO 1 Amp continuous current Pto,= 1 Watt REFER TO ZTX549 FOR GRAPHS E E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Collector-Base Voltage
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FXT549
ZTX549
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR SWITCHING TRANSISTOR ISSU E 2 -SEPT EM B ER 94 MPS2907A _ FEATURES * 60 Volt V CE0 * Fast switching E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L VALUE UNIT Collector-Base Voltage v CB0 -60 V Collector-Emitter Voltage
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MPS2907A
cH7Q57Ã
001G35S
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR _ ISSUE 1 - FEB 94 FEATURES * 150 Volt V CE0 * 1 A m p continuous current * Low saturation voltage * Ptot= 1 W a t t REFER TO ZTX655 FOR G R A P H S ABSOLUTE M A XIM U M RATINGS. PARAMETER SY M B O L
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ZTX655
001G35S
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 - MARCH 94 _ ABSOLUTE MAXIMUM RATINGS. P A R A M ETER SY M B O L VALUE U N IT V v CBO -50 Collector-Em itter Voltage v CEO -45 V Em itter-Base Voltage V EBO -5 V -1 A Collector-Base Voltage
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001G35S
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Untitled
Abstract: No abstract text available
Text: P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 -M ARCH 94 FEATURES * 100 Volt VDS * RDS.on =8fl / Ds REFER TO ZVP2110A FOR GRAPHS E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Drain-Source Voltage V DS -100 V b -230 mA
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ZVP2110A
cH7Q57Ã
001G35S
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lm 3357
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET ISSUE 2 -M A R C H 94_ FEATURES * 450 Volts V DS * RDS on =50n ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAMETER Drain-Source Voltage V DS Continuous Drain Current at Tamb=25°C VALUE UNIT
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cH7Q57Ã
001G35S
lm 3357
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K553
Abstract: No abstract text available
Text: LOC DÎST DRAWING MADE IN THIRD ANGLE PROJECTION_ THIS DRAWING ES UNPUBLISHED. | g C o p y r ig h t RESERVED. t9 AMP PRO DU CTS M AY REVISIONS RELEASED FOR PUBLICATION sy AMP BE COVERED I ncorpo rated BY U .S . , Ha AND r r is b u r g F O R E IG N
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ft5530Z/l5fc-0l
K553
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 - MARCH 94_ FEATURES * 350 Volt V,DS .RDS onr50£î ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAMETER VALUE UNIT 350 V ta 90 mA mA Drain-Source Voltage V DS Continuous Drain Current at Tamb=25°C
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onr50Â
cH7Q57Ã
0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSU E 2 -J U N E 94_ FEATURES * 60 Volt V DS * R D S o n = 1 i i ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Drain-Source Voltage (/) a > UNIT 60 V 600 mA 'd m 8 A V GS ±20 V ^tot 0.7
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0Q1Q354
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 60 Volt V DS * R DS on = 2 £ i ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Drain-Source Voltage Continuous Drain Current at Tamtp25°C VALUE UNIT V DS 60
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Tamtp25Â
001G35S
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 -M A R C H 94_ FEATURES 200 Volt VDS R D S o n r1 0 i î REFER TO ZVN2120A FOR GRAPHS ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L VALUE UNIT Drain-Source Voltage V DS 200 V
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ZVN2120A
Tamtp25Â
cH7Q57Ã
0Q1Q354
001G35S
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