Untitled
Abstract: No abstract text available
Text: UT54ACS 164/UT54ACTS 164 R adiation-H ardened 8-B it Shift R egisters PINOUTS FEATURES 14-Pin D IP Top View • AND-gated enable/disable serial inpuls • Fully buffered clock and serial inputs • Direct clear • 1.2n radiation-hardened CMOS - Latchup immune
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UT54ACS
164/UT54ACTS
14-pin
14-lead
UT54ACS164
UT54ACTS164
UT54ACS164/UT54
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sy 164
Abstract: sy 166 sy 160 OC870 sy-162 sy162 sy 103 OC824 SY164 OC872
Text: UMSCHLÜSSELLUNGSLISTE DDR-TRANSISTOREN und -DIODEN gültig ab 01.01.1964 nach TGL 19 442 NEUER TYP ALTER TYP NEUER BASTELTYP ALTER BASTELTYP GC 100 GC 101 OC 870 F≤ 25 dB OC 870 F≤ 10 dB LC 810 LC 810 LA 25 LA 25 GC 115 GC 116 GC 117 GC 118 GC 121 GC 122
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sy 160
Abstract: Scans-048 OC871 gf 122 DSAGER00037 GC101 OC870 OC883 LF 833
Text: UMSCHLÜSSELLUNGSLISTE DDR-TRANSISTOREN und -DIODEN gültig ab 01.01.1964 nach TGL 19 442 NEUER ALTER NEUER TYP_ TYP_ BASTELTYP ALTER BASTELTYP GC 100 GC 101 OC 870 F< 25 dB OC 870 F< 10 dB LC 810 LC 810 LA 25 LA 25 GC GC GC GC GC GC
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VDE 0207, part 4
Abstract: VDE reg 7030 VDE 0207, part 5 VDE 0207 Lapp cable VDE reg 7030 10 g VDE 0207, part 21 VDE 0207, part 20 VDE 0207, part 6 141097
Text: Prepared by Veronika Kuboth – 25th October 2007 ÖLFLEX Classic 110 SY RS: ÖLFLEX® CLASSIC 110 SY cables are VDE approved control- and connecting cables for flexible use and fixed installation for medium mechanical use. They are for use in dry, damp and wet rooms. They may only be installed
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73/23/EEC
VDE 0207, part 4
VDE reg 7030
VDE 0207, part 5
VDE 0207
Lapp cable
VDE reg 7030 10 g
VDE 0207, part 21
VDE 0207, part 20
VDE 0207, part 6
141097
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Untitled
Abstract: No abstract text available
Text: PREM O FC RFI Power Line Filters For equipment using S.M.P.S. For equipment using s.m.p.s. Chassis m o u n tin g dou b le stage filte r. H igh sym m etrical a tte n u a tio n . S w itching m ode p ow e r supplies. General Specifications M axim um op eratin g voltage: 250Vac.
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250Vac.
1800Vac
FC-10X
FC-10Z
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hbx 300 y
Abstract: 34R3437-PW
Text: SSI 34R3437-PW 5 V 2-Channel Write Coil Driver with Read Buffer Prototype DESCRIPTION FEATURES The SSI 34R3437-PW is a BiCMOS monolithic integrated circuit that includes a read buffer amplifer and a 2-channel, double pulse, write driver designed to drive a transformer coupled ferrite head. The read
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34R3437-PW
34R3437-PW
20-Pin
hbx 300 y
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BUK455-60A
Abstract: BUK455 BUK455-60B T0220AB cr35 transistor
Text: PHILIPS INT ER NA TI O N AL bSE D E9 711002b DDma7b Philips Semiconductors PowerMOS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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711DA2b
BUK455-60A/B
T0220AB
BUK455
BUK455-60A
BUK455-60B
cr35 transistor
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Untitled
Abstract: No abstract text available
Text: HB56U272E-6B/7B/8B 2,097,152-Word x 72-Bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8BYTE DIMM HITACHI Rev.0.0 Feb.02,1996 Description The HB56U272E belongs to 8 Byte DIMM Dual In-line Memory Module family, and has been developed
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HB56U272E-6B/7B/8B
152-Word
72-Bit
168-pin
HB56U272E
16-Mbit
HM5117805BTT)
16-bit
74ABT16244)
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Untitled
Abstract: No abstract text available
Text: HM5164165A Series HM5165165A Series 4194304-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-453 B (Z) Preliminary Rev. 0.2 Jun. 12, 1996 Description The Hitachi HM 5164165A Series, HM 5165165A Series are CMOS dynamic RAMs organized as 4,194,304-word x 16-bit. They employ the most advanced CMOS technology for high performance
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HM5164165A
HM5165165A
4194304-word
16-bit
ADE-203-453
164165A
165165A
304-word
16-bit.
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DB884H60
Abstract: DB874h120 db882h45 DB884 DB872H120 DB872H83 DB882 DB884h45 DB884H db874H83
Text: DB870 SERIES OF PANEL ANTENNAS 0 B 880 5 to 15.6 dBd GAIN, 806-960 M Hz This series of directional panel antennas has 15 models with gains from 5 to 15 .6 dBd 7.1 to 1 7 .7 dBi and with five different horizontal beamwidths and three vertical beamwidths. All models are 1 2 " (305 mm)
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DB870
DB5083
DB882H60
DB882H45
DB874H10S
DB874H83
DB884H60
DB884H45
DB884H60
DB874h120
db882h45
DB884
DB872H120
DB872H83
DB882
DB884h45
DB884H
db874H83
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Nippon capacitors
Abstract: No abstract text available
Text: H B 5 6 G 1 6 4 E J - 6 B / 7 B 1,048,576-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-551A Z Rev. 1.0 Feb. 20, 1996 Description The HB56G164EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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576-word
64-bit
168-pin
ADE-203-551A
HB56G164EJ
16-Mbit
HM5118160BJ)
16-bit
74ABT16244)
Nippon capacitors
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673E
Abstract: No abstract text available
Text: HB56UW1673E-6A/7A 16777216-word x 72-bit High Density Dynamic RAM Module HITACHI ADE-203-575A Z Rev. 1.0 Dec. 24, 1996 Description The HB56UW1673E belongs to the 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4- and 8-byte processor applications. The
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HB56UW1673E-6A/7A
16777216-word
72-bit
ADE-203-575A
HB56UW1673E
18pieces
64-Mbit
HM5165405ATT)
16-bit
673E
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D11D0
Abstract: MAX177 MAX177CNG MAX177CWG MAX177ENG MAX177EWG MAX177MRG
Text: y n y j x i y n CMOS 10-B it A / D Converter w ith Track-and-Hotd _ Features T h e M A X1 77 is a c o m p lete C M O S sa m p lin g 10-bit a n a lo g -to -d ig ita l converter A D C that co m b in e s an o n -c h ip tra ck -a n d -h o ld and voltage reference along
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10-Bit
12-Bit
33//S
40ppm/Â
500MQ)
100ns
180mW
MAX177
D11D0
MAX177CNG
MAX177CWG
MAX177ENG
MAX177EWG
MAX177MRG
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sy 164
Abstract: hc 8414 8255 application 8255 diode sy 164
Text: Ferrite Cores CR, CRS, SY, T Series For Audio-Visual, TV, & Radio Equipment For CRT Display MATERIAL CHARACTERISTICS Material Initial permeability Saturation magnetic flux density∗ [H = 1194A/m] Remanent flux density∗ µi BS mT Br mT Coercive force∗
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194A/m]
H4MCR3928
H4MCR5136D
H4MCR4646VA
H4LCR4648H
H4MSYF3138-20
H4MSY3138-20
H4MCRS4228
H4MT41
sy 164
hc 8414
8255 application
8255
diode sy 164
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Untitled
Abstract: No abstract text available
Text: 6 7 8 FUNCTION KE Y 11 S E E S H EET 2 / 163.70 REF, 6.445 I40.97±0.20 5.55±.008 molex l l l l l l l l l l l l l l l l l l l l l l l l l l l l PEG "A" 1.27, TYP .05 ' 11.45 ’ 0 .45’ \ \ \ - p EG "B" 3.18 TYP. .125 6.35 .250 TYP. 36.83 1.45 WHEN L A T C H CLOSED
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Q980624
S672240
11II1
SD-67224-001
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C164CI
Abstract: PCA82C251 C164 DIP40 Funkamateur
Text: DIPmodul 164 Hardware Manual Ausgabe Januar 2002 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG DIPmodul 164 Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das
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L-546d
D-07973
C164CI
PCA82C251
C164
DIP40
Funkamateur
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Untitled
Abstract: No abstract text available
Text: V826632M24SA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply
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V826632M24SA
DDR400
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Untitled
Abstract: No abstract text available
Text: V826632M24SA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply
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V826632M24SA
DDR400
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Untitled
Abstract: No abstract text available
Text: HB56S864ES Series 8,388,608-word x 64-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-608 Z Preliminary Rev. 0.0 Jun. 14, 1996 Description The HB56S864ES belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB56S864ES
608-word
64-bit
168-pin
ADE-203-608
16-Mbit
HM5116405)
16-bit
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colour television block diagram
Abstract: lzl 60 c TDA2523 TDA2523Q
Text: T D A25 23 TDA 25 23 Q COLOUR DEMODULATOR CO MB IN AT IO N T h e TD A 2523 I s an in te g r a te d sy n ch ro n o u s d e m o d u la to r co m b in atio n f o r c o lo u r te le v is io n r e c e i v e r s in c o r p o r a tin g th e fo llo w in g fu n c tio n s :
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TDA2523
TDA2523Q
colour television block diagram
lzl 60 c
TDA2523Q
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Nippon capacitors
Abstract: No abstract text available
Text: H B 56U 472E -6B /7B /8B 4,194,304-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Buffered 8 byte DIMM HITACHI ADE-203-554 Z Preliminary Rev. 0.0 Mar. 09, 1996 Description The HB56U472E belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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304-word
72-bit
168-pin
ADE-203-554
HB56U472E
16-Mbit
5116405BTS)
16-bit
74ABT16244)
Nippon capacitors
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raychem TD
Abstract: dash 2b-5 10D45
Text: RED INDICATES ORIGINAL DATA a W T A D B IN THIS m D HffNT I S PfiDWIETAJn' TD W H L IL H B-ECTBDN1CI INC. AW WALL NOT BE OISCLDSH], CDPIB] DR I A S POB P f m i P O f T OR MANUFATTO* WITHOUT EXPOEss M i r r a i p s w is s id n . N T ABL E 1 DASH NO CABLE S
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-2/TRC-75
5D-3B84
02-3B34
BJ379XBJ379BR
9-11-B1
raychem TD
dash 2b-5
10D45
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sy 171
Abstract: C143 T transistor DP83223 27C020 AD30 PM3351 R177 XC9572 c124 npn R166
Text: E L A N 1 x1 0 0 : 2 P ort 1 0 /1 0 0 M bit/s S w itch SRAM, Config Resistors, LED's PM3351 Port 1 Sheet 4 Sheet 3 Physical Layer Port 1 Sheet 5 Clocks, PCIBus, EPROM Sheet 2 PM3351 Port 2 Bypass caps, Regulator Physical Layer Port 2 SRAM, Config Resistors, LED's
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PM3351
XC9572
2200uF
sy 171
C143 T transistor
DP83223
27C020
AD30
R177
XC9572
c124 npn
R166
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Untitled
Abstract: No abstract text available
Text: V826632M24SA 32M x 64 HIGH PERFORMANCE UNBUFFERED DDR SDRAM MICRODIMM MODULE Features Description • 172 Pin Unbuffered 33,554,432 x 64 bit Organization DDR MICRODIMM Modules ■ Utilizes High Performance 32M x 8 DDR SDRAM in SOC Packages ■ Single +2.5V ± 0.2V Power Supply
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V826632M24SA
DDR400
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