SWITCHING VOLTAGE 500V RELAY Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

S1-M10

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay

uf830l

Abstract: UF830G UF830
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay

UF840

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

specifications of power mosfet

Abstract: N-Channel mosfet 400v to220 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

uf830l

Abstract: RGS12 UF830 5V GATE TO SOURCE VOLTAGE MOSFET MOSFET 400V TO-220 mosfet TEST UF830L-TN3-R uf830l-ta3-t RGS-12 N-Channel mosfet 400v to220
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830-E Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

MOSFET 50V 100A TO-220

Abstract: UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

UF830L

Abstract: UF830G UF830 max3103
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830-F Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830 Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET 1  TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830-F Preliminary Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830K Preliminary Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION 1 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

npn 1000V 15A

Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in

uptb540

Contextual Info: niC R O S E N I CORP/ Ü IA TE R TOtilN S DE D • T3M7Tti3 0012513 27b ■ U N I T POWER TRANSISTORS UPTB520 UPTB530 UPTB540 UPTB550 0.1 Amp, 500V, Planar NPN, Plastic 7 FEATURES ' • Designed for High Speed Switching Applications • Col lector-Emitter Voltage: up to 500V

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V

Abstract: MOSFET 400V TO-220 TQ2 rohs UF840-TQ2-T UF840 UF840L-TA3-T UF840-TA3-T UF840-TF3-T uf840l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF840 Power MOSFET 8A, 500V, 0.85Ω, N-CHANNEL POWER MOSFET 1 „ DESCRIPTION 1 TO-263 TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF830K-MT Power MOSFET 4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF830K-MT is a N-Channel enhancement mode silicon gate power MOSFET is designed high voltage, high speed power switching applications such as switching regulators,

TRANSISTOR mosfet IRF840

Abstract: transistor irf840 IRF840 n-channel mosfet Application of irf840 mosfet irf840 datasheet irf840 mosfet mosfet nA idss IRF840 equivalent irf840 IRF840 and its equivalent
Contextual Info: isc Product Specification INCHANGE Semiconductor isc N-Channel Mosfet Transistor IRF840 •FEATURES ·Drain Current –ID=8.0A@ TC=25℃ ·Drain Source Voltage: VDSS= 500V Min ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·DESCRITION ·Designed for high voltage, high speed switching power applications such as switching regulators, converters, solenoid and

UPTB550

Contextual Info: POWER TRANSISTORS 0.1 Amp, 500V, Planar NPN, Plastic u p tb 540 UPTB550 FEATU RES DESCRIPTIO N • • • • Unitrode high voltage power transistors provide a unique combination of low saturation voltage, high gain and fast switching. They are ideally suited for