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    SWITCHING TRANSISTOR LOW POWER Search Results

    SWITCHING TRANSISTOR LOW POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    1SS193 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.1 A, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    TC7S66FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), SPST Analog Switch, SOT-353 (USV), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7S66F Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), SPST Analog Switch, SOT-25 (SMV), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC4S66FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), SPST Analog Switch, SOT-353 (USV), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC4S66F Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), SPST Analog Switch, SOT-25 (SMV), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    SWITCHING TRANSISTOR LOW POWER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SD560

    Abstract: nec 2sd560 2sd560 equivalent NEC RELAY
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is


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    2SD560 2SD560 O-220AB O-220AB) nec 2sd560 2sd560 equivalent NEC RELAY PDF

    NEC RELAY

    Abstract: No abstract text available
    Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct


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    2SD2163 2SD2163 NEC RELAY PDF

    2SC4554

    Abstract: 2sc4554 nec
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4554 NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a low power dissipation.


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    2SC4554 2SC4554 2sc4554 nec PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1648, 2SA1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC


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    2SA1648, 2SA1648-Z 2SA1648 PDF

    2SA1743

    Abstract: C11531E
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is


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    2SA1743 2SA1743 C11531E PDF

    2SA1742

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal


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    2SA1742 2SA1742 O-220 O-220) PDF

    2SA1741

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is


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    2SA1741 2SA1741 PDF

    2SC4550

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


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    2SC4550 2SC4550 PDF

    NEC 2sc4552

    Abstract: 2SC4552
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


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    2SC4552 2SC4552 NEC 2sc4552 PDF

    2SC4551

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


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    2SC4551 2SC4551 PDF

    transistor case To 106

    Abstract: BUT11A Transistor morocco 1300
    Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION


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    BUT11A BUT11A O-220 O-220 transistor case To 106 Transistor morocco 1300 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR  FEATURES * Bipolar Power Transistor * High Current Switching * High hFE * Low VCE(SAT)  ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UN1518L-AE3-R


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    UN1518 UN1518L-AE3-R UN1518G-AE3-R OT-23 QW-R206-088 PDF

    UN1518

    Abstract: UN1518L-AE3-R UN1518G-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR „ FEATURES * Bipolar Power Transistor * High Current Switching * High hFE * Low VCE(SAT) „ ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UN1518L-AE3-R


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    UN1518 UN1518L-AE3-R UN1518G-AE3-R OT-23 QW-R206-088 UN1518 UN1518L-AE3-R UN1518G-AE3-R PDF

    BUF630

    Abstract: No abstract text available
    Text: BUF630 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor SWOT D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature


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    BUF630 D-74025 BUF630 PDF

    BUF650

    Abstract: No abstract text available
    Text: BUF650 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor SWOT D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature


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    BUF650 D-74025 BUF650 PDF

    BUF644

    Abstract: No abstract text available
    Text: BUF644 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor SWOT D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature


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    BUF644 D-74025 BUF644 PDF

    BUF636A

    Abstract: 5V rectifier ic
    Text: BUF636A Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature


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    BUF636A D-74025 26-Sep-97 BUF636A 5V rectifier ic PDF

    BUF742

    Abstract: telefun
    Text: BUF742 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature


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    BUF742 D-74025 18-Jul-97 BUF742 telefun PDF

    BUF654

    Abstract: transistor 9747
    Text: BUF654 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature


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    BUF654 D-74025 18-Jul-97 BUF654 transistor 9747 PDF

    BUF653

    Abstract: ELECTRONIC BALLAST transistor DIAGRAM
    Text: BUF653 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature


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    BUF653 D-74025 18-Jul-97 BUF653 ELECTRONIC BALLAST transistor DIAGRAM PDF

    08-Oct-97

    Abstract: No abstract text available
    Text: Temic BUF7216 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature


    OCR Scan
    BUF7216 D-74025 08-Oct-97 08-Oct-97 PDF

    transistor SMD n 03a

    Abstract: No abstract text available
    Text: Temic BUD600 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature


    OCR Scan
    BUD600 BUD600 D-74025 18-Jul-97 transistor SMD n 03a PDF

    BUD630

    Abstract: No abstract text available
    Text: Temic BUD630 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature


    OCR Scan
    BUD630 BUD630 D-74025 18-Jul-97 PDF

    SMD Transistor A

    Abstract: Temic Semiconductors
    Text: Temic BUD636A Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature


    OCR Scan
    BUD636A BUD636A D-74025 18-Jul-97 SMD Transistor A Temic Semiconductors PDF