2SD560
Abstract: nec 2sd560 2sd560 equivalent NEC RELAY
Text: DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for low- ORDERING INFORMATION frequency power amplifiers and low-speed switching. This transistor is
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2SD560
2SD560
O-220AB
O-220AB)
nec 2sd560
2sd560 equivalent
NEC RELAY
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NEC RELAY
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct
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2SD2163
2SD2163
NEC RELAY
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2SC4554
Abstract: 2sc4554 nec
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4554 NPN SILICON EPITAXIAL TRANSISTOR FOR SWITCHING The 2SC4554 is a power transistor designed especially for low PACKAGE DRAWING UNIT: mm collector saturation voltage and features large current switching at a low power dissipation.
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2SC4554
2SC4554
2sc4554 nec
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1648, 2SA1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC
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2SA1648,
2SA1648-Z
2SA1648
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2SA1743
Abstract: C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is
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2SA1743
2SA1743
C11531E
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2SA1742
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal
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2SA1742
2SA1742
O-220
O-220)
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2SA1741
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is
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2SA1741
2SA1741
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2SC4550
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
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2SC4550
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NEC 2sc4552
Abstract: 2SC4552
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
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2SC4552
2SC4552
NEC 2sc4552
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2SC4551
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is
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2SC4551
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transistor case To 106
Abstract: BUT11A Transistor morocco 1300
Text: BUT11A HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED APPLICATIONS: FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS ■ DESCRIPTION
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BUT11A
BUT11A
O-220
O-220
transistor case To 106
Transistor morocco 1300
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR FEATURES * Bipolar Power Transistor * High Current Switching * High hFE * Low VCE(SAT) ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UN1518L-AE3-R
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UN1518
UN1518L-AE3-R
UN1518G-AE3-R
OT-23
QW-R206-088
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UN1518
Abstract: UN1518L-AE3-R UN1518G-AE3-R
Text: UNISONIC TECHNOLOGIES CO., LTD UN1518 NPN SILICON TRANSISTOR POWER SWITCHING TRANSISTOR FEATURES * Bipolar Power Transistor * High Current Switching * High hFE * Low VCE(SAT) ORDERING INFORMATION Ordering Number Lead Free Plating Halogen Free UN1518L-AE3-R
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UN1518
UN1518L-AE3-R
UN1518G-AE3-R
OT-23
QW-R206-088
UN1518
UN1518L-AE3-R
UN1518G-AE3-R
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BUF630
Abstract: No abstract text available
Text: BUF630 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor SWOT D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature
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BUF630
D-74025
BUF630
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BUF650
Abstract: No abstract text available
Text: BUF650 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor SWOT D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature
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BUF650
D-74025
BUF650
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BUF644
Abstract: No abstract text available
Text: BUF644 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features D Simple-sWitch-Off Transistor SWOT D HIGH SPEED technology D Planarpassivation D 100 kHz switching rate D Very low switching losses D Very low dynamic saturation D Very low operating temperature
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BUF644
D-74025
BUF644
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BUF636A
Abstract: 5V rectifier ic
Text: BUF636A Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
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BUF636A
D-74025
26-Sep-97
BUF636A
5V rectifier ic
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BUF742
Abstract: telefun
Text: BUF742 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
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BUF742
D-74025
18-Jul-97
BUF742
telefun
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BUF654
Abstract: transistor 9747
Text: BUF654 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
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BUF654
D-74025
18-Jul-97
BUF654
transistor 9747
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BUF653
Abstract: ELECTRONIC BALLAST transistor DIAGRAM
Text: BUF653 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
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BUF653
D-74025
18-Jul-97
BUF653
ELECTRONIC BALLAST transistor DIAGRAM
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08-Oct-97
Abstract: No abstract text available
Text: Temic BUF7216 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature
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BUF7216
D-74025
08-Oct-97
08-Oct-97
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transistor SMD n 03a
Abstract: No abstract text available
Text: Temic BUD600 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature
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BUD600
BUD600
D-74025
18-Jul-97
transistor SMD n 03a
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BUD630
Abstract: No abstract text available
Text: Temic BUD630 Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature
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BUD630
BUD630
D-74025
18-Jul-97
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SMD Transistor A
Abstract: Temic Semiconductors
Text: Temic BUD636A Semiconductors Silicon NPN High Voltage Switching Transistor Features Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate • Very low switching losses Very low dynamic saturation Very low operating temperature
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BUD636A
BUD636A
D-74025
18-Jul-97
SMD Transistor A
Temic Semiconductors
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