SWITCHING DRIVER IRF830 Search Results

Contextual Info: PD - 97668 IRF8304MPbF IRF8304MTRPbF DirectFET Power MOSFET ‚ l l l l l l l l l l RoHS Compliant and Halogen Free  Low Profile <0.7 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters

Contextual Info: IRF8304MPbF DirectFET Power MOSFET ‚ RoHS Compliant and Halogen Free  Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible  30V max ±20V max 1.7mΩ@ 10V 2.4mΩ@ 4.5V l Ultra Low Package Inductance

Contextual Info: StrongIRFET IRF8301MTRPbF DirectFET™ Power MOSFET ‚ Ultra-low RDS on l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra-low Package Inductance l Optimized for high speed switching or high current switch (Power Tool) l Low Conduction and Switching Losses

IRF8306M

Abstract: irf8306
Contextual Info: PD - 97670 IRF8306MPbF IRF8306MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical values unless otherwise specified V V R R DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V

Contextual Info: PD - 97670 IRF8306MPbF IRF8306MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ l RoHS Compliant Containing No Lead and Halogen Free  Typical values unless otherwise specified V V R R DSS GS DS(on) DS(on) Integrated Monolithic Schottky Diode 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V

Contextual Info: IRF8301MTRPbF DirectFET™ Power MOSFET ‚ Ultra-low RDS on l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra-low Package Inductance l Optimized for high speed switching or high current switch (Power Tool) l Low Conduction and Switching Losses

IRF8301

Contextual Info: IRF8301MTRPbF DirectFET™ Power MOSFET ‚ Ultra-low RDS on l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra-low Package Inductance l Optimized for high speed switching or high current switch (Power Tool) l Low Conduction and Switching Losses

Contextual Info: PD - 97668 IRF8304MPbF IRF8304MTRPbF DirectFET Power MOSFET ‚ l l l l l l l l l l RoHS Compliant and Halogen Free  Low Profile <0.7 mm Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters

Contextual Info: IRF8306MPbF l RoHS Compliant Containing No Lead and Halogen Free HEXFET Power MOSFET plus Schottky Diode ‚  Typical values unless otherwise specified Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V

IRF8302M

Contextual Info: PD - 97667 IRF8302MPbF IRF8302MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant and Halogen-Free  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V

IRF8302M

Contextual Info: IRF8302MPbF l l l l l l l l l l l RoHs Compliant and Halogen-Free  HEXFET Power MOSFET plus Schottky Diode ‚ Integrated Monolithic Schottky Diode Typical values unless otherwise specified Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) Dual Sided Cooling Compatible 

81145

Abstract: IRF830A SiHF830A SiHF830A-E3 free transistor vishay S8114
Contextual Info: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

IRF8302M

Abstract: IRF8302MTRP
Contextual Info: PD - 97667 IRF8302MPbF IRF8302MTRPbF HEXFET Power MOSFET plus Schottky Diode ‚ Typical values unless otherwise specified RoHs Compliant and Halogen-Free  VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 30V max ±20V max 1.4mΩ@ 10V 2.2mΩ@ 4.5V

IRF1010

Contextual Info: PD- 94820 IRF830APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic

Contextual Info: PD -97671 IRF8308MPbF IRF8308MTRPbF DirectFET™ Power MOSFET ‚ Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V l Dual Sided Cooling Compatible 

Contextual Info: PD -97671 IRF8308MPbF IRF8308MTRPbF DirectFET™ Power MOSFET ‚ l l l l l l l l l l Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide  VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V

IRF1010

Abstract: IRF830A International Rectifier IRF830A
Contextual Info: PD- 91878D IRF830A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic

AN-1001

Abstract: IRF1010 vishay rectifier bridge 1982
Contextual Info: PD- 94820 IRF830APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic

Contextual Info: PD- 94820 IRF830APbF SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic

Contextual Info: IRF8308MPbF DirectFET™ Power MOSFET ‚ RoHs Compliant Containing No Lead and Bromide  Typical values unless otherwise specified l Low Profile (<0.7 mm) VDSS VGS RDS(on) RDS(on) l Dual Sided Cooling Compatible  30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V

IRF830AL

Abstract: IRF830AS SiHF830A SiHF830AL SiHF830AL-E3 SiHF830AS SiHF830AS-E3
Contextual Info: IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 1.40 Qg (Max.) (nC) 24 Qgs (nC) 6.3 Qgd (nC) 11 Configuration

IRF830A

Abstract: SiHF830A SiHF830A-E3
Contextual Info: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

IRF830AL

Abstract: IRF830AS SiHF830A SiHF830AL SiHF830AL-E3 SiHF830AS SiHF830AS-E3 4.5v to 100v input regulator
Contextual Info: IRF830AS, IRF830AL, SiHF830AS, SiHF830AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 1.40 Qg (Max.) (nC) 24 Qgs (nC) 6.3 Qgd (nC) 11 Configuration

90092

Abstract: IRF1010 IRF830A 4.5v to 100v input regulator
Contextual Info: PD- 91878D IRF830A SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic