DC DC Converters Circuit diagrams
Abstract: ac drive electronic circuit diagram circuit diagram power SWITCHING converter circuit dc dc 100V converter circuit diagram
Text: AC/DC converter Block Diagram The operating the principle is switching regulator based on chopper form. Positive power supply The one with the external coil The one with the bulit-in coil Point A Point A 141V Input pin Output pin Switchig circuit 141V Coil connect pin
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DIP28
Abstract: CDIP28 dect module 2b1q ST5421CFN ST5421CP ST5451 STLC5411FN STLC5411P STLC5412P
Text: TELECOM AND DATA COMMUNICATIONS ISDN ISDN Type Description Package , ST5410* ST5421CP ST5421CFN STLC5432 ST5451 STLC5411FN STLC5411P STLC5412FN STLC5412P STLC5444 STLC5460 STLC5464 STLC5465 STU2071B1 STU2071FN 2B1Q-U-Interface Device SID-GCI: S/T Interface Device with GCI
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ST5410*
ST5421CP
ST5421CFN
STLC5432
ST5451
STLC5411FN
STLC5411P
STLC5412FN
STLC5412P
STLC5444
DIP28
CDIP28
dect module
2b1q
ST5421CFN
ST5421CP
ST5451
STLC5411FN
STLC5411P
STLC5412P
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marking g20
Abstract: 2SK1658
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SK1658 is an N -channel vertical type MOSFET which 2.1±0.1 can be driven by 2.5 V power supply. 1.25±0.1 As the MOSFET is low Gate Leakage Current, it is suitable for
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2SK1658
2SK1658
SC-70
marking g20
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2SK1482
Abstract: 2SJ196 d1567
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1482 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK1482 is N-channel vertical type MOS FET switching device which PACKAGE DRAWING Unit : mm can be directly driven from an IC operating with a 5 V single power supply.
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2SK1482
2SK1482
2SJ196
d1567
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2SK1580
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1580 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1580 is an N -channel vertical type MOS FET which can be PACKAGE DRAWING Unit : mm driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require con-
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2SK1580
2SK1580
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2SK1482
Abstract: d1567 2SJ196
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1482 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK1482 is N-channel vertical type MOS FET switching device which PACKAGE DRAWING Unit : mm can be directly driven from an IC operating with a 5 V single power supply.
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2SK1482
2SK1482
d1567
2SJ196
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G1563
Abstract: D1563 2SK1658 C10535E VP15-00-3 NEC MARKING surface TC236
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1658 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SK1658 is an N -channel vertical type MOS FET which can be PACKAGE DRAWING Unit : mm driven by 2.5 V power supply. 2.1 ±0.1 1.25 ±0.1 As the MOS FET is low Gate Leakage Current, it is suitable for appliances
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2SK1658
2SK1658
G1563
D1563
C10535E
VP15-00-3
NEC MARKING surface
TC236
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vs5-24v
Abstract: Relays vs5-24v vs5-24 stepper relay RG2L VS5 24V vs524v DF2-L2 X61C S4 1C
Text: VS MODERN STEPPER RELAY USING ELECTRONIC SWITCHING CIRCUIT VS MODULE • High reliability and efficiency • Low power requirement • Short switching times • Economic and spacesaving • Universal application in stepper devices or counters • Suitable for most common washing methods except ultrasonic cleaning
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step62
50x25
50x36
vs5-24v
Relays vs5-24v
vs5-24
stepper relay
RG2L
VS5 24V
vs524v
DF2-L2
X61C
S4 1C
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035H
Abstract: IRFPE30
Text: PD -95430 IRG4PC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PC40FPbF
O-247AC
O-247AC
IRFPE30
035H
IRFPE30
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sgs 8 r 15
Abstract: ZE 004 VN121SP
Text: VN121SP LOW SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE V DSS R DS on I n (*) VC C VN121SP 40 V 0.05 Ω 7A 26 V • ■ ■ ■ ■ ■ ■ MAXIMUM CONTINUOUS OUTPUT CURRENT (#): 21 A @ Tc= 85oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN
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VN121SP
VN121SP
sgs 8 r 15
ZE 004
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B-989
Abstract: No abstract text available
Text: PD - 95447A IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5447A
IRG4BC40FPbF
O-220AB
O-220AB
TG4BC40FPbF
B-989
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035H
Abstract: IRFPE30
Text: PD -95430 IRG4PC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PC40FPbF
O-247AC
O-247AC
IRFPE30
035H
IRFPE30
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f1010
Abstract: 555 triangular wave B-989
Text: PD - 95447 IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4BC40FPbF
O-220AB
O-220AB
O-220AB.
f1010
555 triangular wave
B-989
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VN16BSP
Abstract: No abstract text available
Text: VN16BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY TYPE V DSS R DS on I OUT V CC VN16BSP 40 V 0.06 Ω 5.6 A 26 V • ■ ■ ■ ■ ■ ■ MAXIMUM CONTINUOUS OUTPUT CURRENT :20A @ Tc = 85oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION
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VN16BSP
VN16BSP
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Untitled
Abstract: No abstract text available
Text: PD - 95447A IRG4BC40FPbF Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Fast: optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
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5447A
IRG4BC40FPbF
O-220AB
O-220AB
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KCG057QV1DB
Abstract: KCG057QV1DB-G50 CXA-LO612A-VJL B318 B319 BHR-03VS-1 G318 R320 kcg057qv1dbg50 D2245
Text: Specification KCG057QV1DB-G50 Version June 2005 Data Modul AG - www.data-modul.com Caution 1. This Kyocera LCD module has been specifically designed for use only in electronic devices in the areas of audio control, office automation, industrial control, home appliances, etc. The modules should not be
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KCG057QV1DB-G50
D-70771
KCG057QV1DB
KCG057QV1DB-G50
CXA-LO612A-VJL
B318
B319
BHR-03VS-1
G318
R320
kcg057qv1dbg50
D2245
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VN16BSP
Abstract: demag ds 20
Text: VN16BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY T YPE V DSS R DS on I OUT V CC VN16BSP 40 V 0.06 Ω 5.6 A 26 V • ■ ■ ■ ■ ■ ■ MAXIMUM CONTINUOUS OUTPUT CURRENT :20A @ Tc = 85oC 5V LOGIC LEVEL COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION
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VN16BSP
VN16BSP
demag ds 20
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Untitled
Abstract: No abstract text available
Text: VN16B ISO HIGH SIDE SMART POWER SOLID STATE RELAY Figure 1. Package Table 1. General Features Type VDSS RDS on In(1) VCC VN16B 40 V 0.06 5.6 A 26 V Note: 1. Nominal current according to ISO definition for high side automotive switch. The Nominal Current is the current at
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VN16B
VN16B
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VN16B
Abstract: No abstract text available
Text: VN16B ISO HIGH SIDE SMART POWER SOLID STATE RELAY Table 1. General Features Figure 1. Package Type VDSS RDS on In(1) VCC VN16B 40 V 0.06 Ω 5.6 A 26 V Note: 1. Nominal current according to ISO definition for high side automotive switch. The Nominal Current is the current at
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VN16B
VN16B
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variable switchig power supply
Abstract: 15PIN 20PIN BH7870AKV VQFP48C
Text: i/ e l Stereo ¿zoom microphone amplifier BH787QAKV •Description •Dimension Units : mm The BH7870AKV is a zoom microphone amplifier for camcorders. Electronic volume circuit, microphone element power regulator, filter for eliminating wind noise, and external microphone input are included.
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00WQ37A
BH787QAKV
BH7870AKV
VQFP48PIN
34PIN
4/32PIN
15PIN
25PIN,
variable switchig power supply
20PIN
VQFP48C
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6PIN CHARGING IC
Abstract: AN5765 Hi Voltage Regulator Circuit
Text: Panasonic CRT Heater Voltage Control 1C AN5765 • Overview Unit:mm AN5765 is an IC for controlling CRT heater voltage. This IC helps streamline of sets and reduces power consumption by a 4-value switching 5 .9 ± 0 .2 5 8 .2 ± 0 .3 7 .8 ± 0 .2 5 output circuit for heater voltage, 5V power source for microcomputers,
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AN5765
AN5765
HSIP007-P-0000
6PIN CHARGING IC
Hi Voltage Regulator Circuit
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FM bandpass filter
Abstract: No abstract text available
Text: Video ICs VCR audio signal processing system •F e a tu re s 1 Operates off dual ±po w e r supply which allows a large reduction in the number of coupling capacitors required, A built-in regulator makes it easy to construct a power supply system. 2)A built-in 2-wire serial control decoder circuit allows
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BH7775K
BH7775K
30MHz,
70MHz,
579545MHz,
433619MHz
FM bandpass filter
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bt357
Abstract: No abstract text available
Text: SGS-THOMSON IS M IlL IC T ^ O ilÊ i V N 121SP LOW SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA . . . . . . . TYPE V dss RDS on ln(*) V cc VN121SP 40 V 0.05 Q 7 A 26 V MAXIMUM CONTINUOUS OUTPUT CURRENT (#): 21 A @ Tc= 85°C 5V LOGIC LEVEL COMPATIBLE INPUT
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VN121SP
VN121SP
bt357
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Untitled
Abstract: No abstract text available
Text: Æ T SGS-THOMSON D lsi S IIL[lCTIs! iD©S VN16BSP ISO HIGH SIDE SMART POWER SOLID STATE RELAY TYP E V dss R D S(on) I0U T Vcc VN16BSP 40 V 0.06 Q. 5.6 A 26 V . MAXIMUM CONTINUOUS OUTPUT CURRENT :20A @ Tc = 85°C . 5V LOGIC LEVEL COMPATIBLE INPUT . THERMAL SHUT-DOWN
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VN16BSP
VN16BSP
SO-10
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