SWICHING FULL BRIDGE Search Results

Contextual Info: 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 www.rohm.com Product News Wide Range & High Speed Swiching 2-channel Motor Driver BD65492MUV ●Package Unit: mm BD65492MUV is 2-channel motor driver switching on output transistors in full-swing.

BD654

Abstract: p-channel DMOS BD65491FV
Contextual Info: 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 www.rohm.com Product News Wide Range & High Speed Swiching 1-channel Motor Driver BD65491FV ●Package Unit: mm 5.0±0.2 16 9 1 8 0.3Min. 4.4±0.2 BD65491FV is 1-channel motor driver switching on output transistors in full-swing.

swiching full bridge

Abstract: 20MT120UFAPBF 20MT120UFa IGBT20
Contextual Info: 20MT120UFAPbF Vishay High Power Products "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

SMPS CIRCUIT DIAGRAM 5V 20A

Abstract: 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v
Contextual Info: I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

ultrafast diode 10a 400v

Abstract: X 0238 CE
Contextual Info: 5/13/02 Bulletin I27124 rev. B 10/02 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

Contextual Info: 20MT120UFAPbF Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

ir igbt 1200V 40A

Abstract: 20MT120UF E78996 bridge
Contextual Info: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

Contextual Info: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery

40MT120UH

Contextual Info: Bulletin I27126 rev. B 10/02 40MT120UH "HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

Contextual Info: Bulletin I27126 rev. A 06/02 40MT120UH "HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

smd diode Uj

Contextual Info: Bulletin I27194 03/05 40MT120UHA 40MT120UHTA "HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

ir igbt 1200V 40A

Abstract: 40MT120UHA 40MT120UHTA IGBT 900V 80A smd ic LM 338 smd diode Uj
Contextual Info: Bulletin I27194 rev. A 01/06 40MT120UHA 40MT120UHTA "HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

Contextual Info: VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors "Full Bridge" IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft

Contextual Info: VS-20MT120UFAPbF www.vishay.com Vishay Semiconductors “Full Bridge” IGBT MTP Ultrafast NPT IGBT , 20 A FEATURES • Ultrafast Non Punch Through (NPT) technology • Positive VCE(on) temperature coefficient • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft

40mt120uhta

Abstract: ir igbt 1200V 40A 001214 Fast Recovery Bridge Rectifier, 60A, 600V 40MT120UHA igbt 40A 600V TF010
Contextual Info: Bulletin I27194 rev. A 01/06 40MT120UHA 40MT120UHTA "HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

Contextual Info: Bulletin I27194 rev. A 01/06 40MT120UHA 40MT120UHTA "HALF-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with

IRGPS66160DPBF

Contextual Info: IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100°C tSC 5µs, TJ max = 175°C G VCE(ON) typ. = 1.65V @ IC = 120A E IRGPS66160DPbF Super 247 n-channel Applications • Welding

Contextual Info: IRGP6690DPbF IRGP6690D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 90A, TC =100°C tSC ≥ 5µs, TJ max = 175°C G G VCE(ON) typ. = 1.65V @ IC = 75A E E G G Gate C Collector Features Benefits High efficiency in a wide range of applications

Contextual Info: IRGP6640DPbF IRGP6640D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 40A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6640DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 24A n-channel