FM260
Abstract: FM2100 FM220 FM230 FM240 FM250
Text: FM220 THRU FM2100 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANG 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * * * * * * Low swiching noise Low forward voltage drop High current capability High speed switching High surge capabitity High reliability
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Original
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FM220
FM2100
DO-214AA
MIL-STD-202E
098gram
FM260
FM2100
FM220
FM230
FM240
FM250
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PDF
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FM220A
Abstract: FM230A FM240A FM250A FM260A
Text: FM220A THRU FM2100A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANG 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * * * * * * Low swiching noise Low forward voltage drop High current capability High speed switching High surge capabitity High reliability
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Original
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FM220A
FM2100A
DO-214AC
MIL-STD-202E
09gram
FM220A
FM230A
FM240A
FM250A
FM260A
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PDF
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Untitled
Abstract: No abstract text available
Text: FM220A THRU FM2100A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANG 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * * * * * * Low swiching noise Low forward voltage drop High current capability High speed switching High surge capabitity High reliability
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Original
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FM220A
FM2100A
DO-214AC
MIL-STD-202E
09gram
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PDF
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Untitled
Abstract: No abstract text available
Text: FM220 THRU FM2100 SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANG 20 to 100 Volts CURRENT 2.0 Ampere FEATURES * * * * * * Low swiching noise Low forward voltage drop High current capability High speed switching High surge capabitity High reliability
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Original
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FM220
FM2100
DO-214AA
MIL-STD-202E
098gram
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PDF
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BT137
Abstract: of TRIAC BT137 BT137 - 600 BT137-600E BT137 application note triac bt137 600 600E triac bt137 600E CDIL Bt137
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TRIAC Sensitive Gate BT137- 600E TO-220 Plastic Package T2 T1 G For use in General Purpose Bidirectional Swiching and Phase Control Applications ABSOLUTE MAXIMUM RATINGS PARAMETER
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Original
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ISO/TS16949
BT137-
O-220
10tomers
C-120
600ERev100604E
BT137
of TRIAC BT137
BT137 - 600
BT137-600E
BT137 application note
triac bt137 600
600E
triac bt137 600E
CDIL Bt137
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PDF
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KSC2752
Abstract: No abstract text available
Text: KSC2752 KSC2752 High Speed High Voltage Swiching Industrial Use TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 500 Units V
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KSC2752
O-126
PW300
Cycle10%
KSC2752
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PDF
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to-126 npn switching transistor 400v
Abstract: No abstract text available
Text: KSC2752 KSC2752 High Speed High Voltage Swiching Industrial Use TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 500 Units V
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Original
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KSC2752
O-126
PW300
Cycle10%
O-126
to-126 npn switching transistor 400v
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PDF
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Untitled
Abstract: No abstract text available
Text: 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 www.rohm.com Product News Wide Range & High Speed Swiching 2-channel Motor Driver BD65492MUV ●Package Unit: mm BD65492MUV is 2-channel motor driver switching on output transistors in full-swing.
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BD65492MUV
53W6424E
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PDF
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Untitled
Abstract: No abstract text available
Text: BAV102 High Voltage, General Purpose Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to
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BAV102
LL-34
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PDF
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FAIRCHILD DIODE
Abstract: FAIRCHILD DIODE SOD80
Text: BAV103 High Voltage, General Purpose Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to
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Original
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BAV103
LL-34
FAIRCHILD DIODE
FAIRCHILD DIODE SOD80
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PDF
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FAIRCHILD DIODE
Abstract: No abstract text available
Text: FDLL3595 High Conductance, Low Leakage Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the
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FDLL3595
LL-34
FAIRCHILD DIODE
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PDF
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BD654
Abstract: p-channel DMOS BD65491FV
Text: 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585 Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 www.rohm.com Product News Wide Range & High Speed Swiching 1-channel Motor Driver BD65491FV ●Package Unit: mm 5.0±0.2 16 9 1 8 0.3Min. 4.4±0.2 BD65491FV is 1-channel motor driver switching on output transistors in full-swing.
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BD65491FV
BD65491FV
10008EAW33
53W6423E
BD654
p-channel DMOS
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA1740TP SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1740TP is N-channel MOS FET device that features a low on-state resistance and excellent swiching characteristics, and designed for high voltage applications
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PA1740TP
PA1740TP
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PDF
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FAIRCHILD DIODE
Abstract: No abstract text available
Text: FDLL485B High Conductance, Low Leakage Diode Description Cathode Band A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless LL-34 surface mount package. Placement of the expansion gap has no relationship to the
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Original
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FDLL485B
LL-34
FAIRCHILD DIODE
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PDF
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1740TP SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1740TP is N-channel MOS FET device that features a low on-state resistance and excellent swiching characteristics, and designed for high voltage applications such as DC/DC converter.
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Original
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PA1740TP
PA1740TP
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PDF
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SMPS CIRCUIT DIAGRAM 5V 20A
Abstract: 400v 20A ultra fast recovery diode 20MT120UF diode 10a 400v
Text: I27124 rev. D 02/03 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
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I27124
20MT120UF
E78996)
20KHz
SMPS CIRCUIT DIAGRAM 5V 20A
400v 20A ultra fast recovery diode
20MT120UF
diode 10a 400v
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PDF
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Untitled
Abstract: No abstract text available
Text: 5/13/02 5/ Bulletin I27124 rev. A 05/02 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with
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I27124
20MT120UF
E78996)
20KHz
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PDF
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ultrafast diode 10a 400v
Abstract: X 0238 CE
Text: 5/13/02 Bulletin I27124 rev. B 10/02 5/ 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with
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Original
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I27124
20MT120UF
E78996)
20KHz
ultrafast diode 10a 400v
X 0238 CE
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PDF
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ir igbt 1200V 40A
Abstract: 20MT120UF E78996 bridge
Text: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
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Original
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20MT120UF
E78996)
20KHz
12-Mar-07
ir igbt 1200V 40A
20MT120UF
E78996 bridge
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PDF
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Untitled
Abstract: No abstract text available
Text: 20MT120UF "FULL-BRIDGE" IGBT MTP UltraFast NPT IGBT Features • UltraFast Non Punch Through NPT Technology • Positive VCE(ON)Temperature Coefficient • 10µs Short Circuit Capability • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery
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Original
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20MT120UF
E78996)
20KHz
08-Mar-07
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC2752 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE TO -126 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage Characteristic VcBO Symbol 500 V Collector-Emitter Voltage VcEO 400 V Emitter- Base Voltage V ebo
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OCR Scan
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KSC2752
300jis,
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PDF
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B1030
Abstract: high voltage swiching transistors swiching full KSC2752
Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic Unit Collector- Base Voltage Collector-Em itter Voltage V cbO 500 V V cE O 400 V Emitter- Base Voltage VEbo 7 V
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OCR Scan
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KSC2752
300ns,
00bDb7M
B1030
high voltage swiching transistors
swiching full
KSC2752
|
PDF
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Symbol Unit Collector- Base Voltage V cB O 500 V Collector-Emitter Voltage V cE O 400 V Emitter- Base Voltage V ebo Collector Current DC
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OCR Scan
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KSC2752
300ns,
00bGb74
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PDF
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R1200F
Abstract: R1500F R1800F R2000F
Text: JGD R1200F THRU R2000F O HIGH VOLTAGE FSAT RECOVERY RECTIFIER VOLTAGE RANGE 1200 To 2000 Volts CURRENT 1.0 Ampere FEATURES DO-41 * Fast swiching * low leakage T * High current capability *-High reliability 1.0 2 5 .4 MIN * High surge capability .034(0 .9?
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OCR Scan
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R1200F
R2000F
DO-41
25VdC
NOTE31
R1500F
R1800F
R2000F
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PDF
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