diode sv 03
Abstract: 1ss388
Text: 1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For high speed switching application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 SV Top View Marking Code: "SV" Simplified outline SOD-523 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value
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1SS388
OD-523
OD-523
diode sv 03
1ss388
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Untitled
Abstract: No abstract text available
Text: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)
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AG01A
AG01Y
AG01Z
FMB-29
FMB-29L
FMB-32
EL02Z
SFPB-66
SFPB-69
SFPB-72
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MOC3023SM
Abstract: MOC3023SR2M MOC30* inductive triac analog control for inductive loads
Text: 6-PIN DIP RANDOM-PHASE OPTOISOLATORS TRIAC DRIVER OUTPUT 250/400 VOLT PEAK MOC3010M MOC3011M MOC3012M MOC3020M MOC3021M MOC3022M MOC3023M DESCRIPTION The MOC301XM and MOC302XM series are optically isolated triac driver devices. These devices contain a AlGaAs infrared emitting diode and a light activated silicon bilateral switch, which functions like a triac. They
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MOC3010M
MOC3011M
MOC3012M
MOC3020M
MOC3021M
MOC3022M
MOC3023M
MOC301XM
MOC302XM
E90700
MOC3023SM
MOC3023SR2M
MOC30* inductive
triac analog control for inductive loads
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UX-F5B
Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Text: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100
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O-220F
RZ1030
RZ1040
RZ1055
RZ1065
RZ1100
RZ1125
RZ1150
UX-F5B
UX-F5B diode
RG-2A Diode
shv-30j
FMQ2FU
axial package
fmp2fur
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MOC3083SR2M
Abstract: MOC3081FM MOC3081M
Text: 6-PIN DIP ZERO-CROSS OPTOISOLATORS TRIAC DRIVER OUTPUT 800 VOLT PEAK MOC3081M MOC3082M MOC3083M PACKAGE SCHEMATIC ANODE 1 6 MAIN TERM. CATHODE 2 N/C 3 5 NC* ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT (TRIAC SUBSTRATE) DESCRIPTION The MOC3081M, MOC3082M and MOC3083M devices consist of a GaAs infrared emitting diode optically coupled to a monolithic
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MOC3081M
MOC3082M
MOC3083M
MOC3081M,
MOC3082M
MOC3083M
P01101866
CR/0117
E90700,
MOC3083SR2M
MOC3081FM
MOC3081M
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MOC306X
Abstract: OPTOCOUPLER trigger thyristor scr thyristor firing control circuit with optocoupler moc3061 application note MOC316X MOC3162-M mercury wetted relay MOC3062M
Text: ZERO-CROSS PHOTOTRIAC OPTOCOUPLER MOC3061-M MOC3062-M MOC3063-M MOC3162-M PACKAGE MOC3163-M SCHEMATIC ANODE 1 6 MAIN TERM. 6 6 5 NC* CATHODE 2 1 N/C 3 1 ZERO CROSSING CIRCUIT 4 MAIN TERM. *DO NOT CONNECT TRIAC SUBSTRATE 6 1 DESCRIPTION The MOC306X and MOC316X devices consist of a AlGaAs infrared emitting diode optically coupled to a monolithic silicon detector
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MOC3061-M
MOC3062-M
MOC3063-M
MOC3162-M
MOC3163-M
MOC306X
MOC316X
OPTOCOUPLER trigger thyristor scr
thyristor firing control circuit with optocoupler
moc3061 application note
MOC3162-M
mercury wetted relay
MOC3062M
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Untitled
Abstract: No abstract text available
Text: TIG067SS Ordering number : ENA1067 SANYO Semiconductors DATA SHEET TIG067SS N-Channel IGBT Light-Controlling Flash Applications Features • • • Low-saturation voltage Enhansment type High speed switching • • • 4.0V drive Built-in Gate-to-Emitter protection diode
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TIG067SS
ENA1067
A1067-9/9
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Untitled
Abstract: No abstract text available
Text: FW217A Ordering number : EN8994B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW217A General-Purpose Switching Device Applications Features • • • • On-state resistance RDS on 1=30mΩ (typ.) 4.5V drive Halogen free compliance Protection Diode in
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FW217A
EN8994B
2000mm2Ã
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HVR-1X 7 diode
Abstract: hvr 1X 7 diode HVR-1X diode HVR-1X 6 diode HVR 1X 7 HVR-1X HVR-1X 7 FMCG2 HVR-1X -7 hvr 1X 3 diode
Text: Selection Guide Rectifier Diodes Type No. SFPM-5 * SFPM-6 * AM01 * EM01 * EM 1 * EM 2 * RM 1 * RM 11 * RM 10 * RM 2 * RO 2 * RM 3 * RM 4 * RM 4 M * FMM-2 * FMM-3 * RBV-40 * RBV-40 M * RBV-40 H * RBV-60 * RBV-60 H * RBV-130 * RBV-150 * RBV-150 S * RBV-250 *
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RBV-40
RBV-40
RBV-60
RBV-60
RBV-130
RBV-150
RBV-150
RBV-250
RBA-40
HVR-1X 7 diode
hvr 1X 7 diode
HVR-1X diode
HVR-1X 6 diode
HVR 1X 7
HVR-1X
HVR-1X 7
FMCG2
HVR-1X -7
hvr 1X 3 diode
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SV-03 diode
Abstract: diode sv 03
Text: SKM 200GB176D .0 2 ME N8? * 5 + %41(/:-+( +;(0-=-(D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 ME N8 B8 .O 2 QEH N8 QFHH 7 M@H C .0 2 RH N8 QRH C UHH C W MH 7 QH [+ .0 2 ME N8 MQH C .0 2 RH N8 Q]H C UHH C .O 2 QEH N8 QQHH C .03+( 2 ME N8 MQH
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200GB176D
SV-03 diode
diode sv 03
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GVVZS3000-21A-2
Abstract: VVQ2000-51A-C10 SS5V1-W16SA1WD-06B-C6 EX500-AC000-S diode catalogue AS3000 SS5V1-16 GVVZS3000-21A-4 IEC529 turck 8 pin m12 connector
Text: 5 Port Solenoid Valve Series SV SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 1.1-1 New Concept Connector Type Manifold Series Series SV1000/2000/3000/4000 SV1000/2000/3000/4000 The use of multi-pin connectors to replace wiring inside manifold blocks provides
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SV1000/2000/3000/4000
30Vrms
UL1310,
UL1585
GVVZS3000-21A-2
VVQ2000-51A-C10
SS5V1-W16SA1WD-06B-C6
EX500-AC000-S
diode catalogue
AS3000
SS5V1-16
GVVZS3000-21A-4
IEC529
turck 8 pin m12 connector
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OP43
Abstract: OP-43 OP-97 REF-03 REF-03G REF03GP REF-43 cmos bandgap reference 4-20ma current sourcing circuit
Text: +2.5V Precision Voltage Reference REF-03 ANALOG DEVICES FEATURES • • • • • • • • • +2.5 Volt O utput . ±0.6% Max Wide Input Voltage R ange.4.SV to 33V Supply C u r r e n t. 1.4mA Max
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REF-03
50ppm/Â
50ppm/V
100ppm/mA
REF03GP
REF03GStt
OP-43,
OP-97for1heoutput
REF-03
OP-43
OP43
OP-97
REF-03G
REF-43
cmos bandgap reference
4-20ma current sourcing circuit
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2-10P1B
Abstract: 2SK2661 L122M l67c
Text: T O S H IB A 2SK2661 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2661 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 03 .610.2
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2SK2661
-l-35il
2-10P1B
2SK2661
L122M
l67c
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Datenbuch
Abstract: Raupenhaus hermsdorf VEB Halbleiterbauelemente thermistore Scans-048 Frankfurt Oder LB1201 DSAGER0002 Thermistor 15k
Text: I I i n □ electronic Hinweis: Die Daten von Dioden und Transistoren aus dieser Unterlage sind bereits in anderen Datenbüchern des Raupenhauses enthalten. Deshalb wurde aus diesem Buch nur der Teil "Halbleiter-Widerstände" entnommen. Halbleiter-Bauelemente
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3ft 05 transistor
Abstract: EVL31-055 M203 30kgf
Text: E V L 31-055 iooa POWER TRANSISTOR MODULE • ÎTfdl: : Features • 7 ij — # 4 is —VfàM Including Free Wheeling Diode ij • H ig h D C C u rren t Gain • fèÜ&ïfé Insulated Type ■ ff liÊ ' A p p lic a tio n s Power Switching • A C -t — 9 M M
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EVL31-055
E82988
3ft 05 transistor
M203
30kgf
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HPS082-0001
Abstract: D0650 Microwave PIN diode d0311 DFOC WE VQE 11 E DD211B DD311A DDF2311 DDF4311
Text: F IL M F IL n 3575745 m ic r o e l e c t r o n ic s M IC R O E L E C T R O N IC S • |L l I I I ■ DDDOmb fll3 I FLnn Microwave PIN Diode Drivers 7= 5-2-2./ The Ultimate fi Microelectronic Packaging and Interconnect Technology 106 Centennial Drwa fteftofly. MA 01960. USA • TEL 5081S31-8901. FAX: (508 532-9954
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S31-8901.
MILSTD-1772
DD212)
28-channe!
D02850)
MIL-STD-1772.
HPS082-0001
D0650
Microwave PIN diode
d0311
DFOC
WE VQE 11 E
DD211B
DD311A
DDF2311
DDF4311
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metelics FSCM 59365
Abstract: 064c diode t86
Text: VARACTORS metelics 30-Volt MSV 34,000 Series 45-Volt MSV 38,000 Series 60-Volt MSV 40,000 Series CORPORATION Features Applications • High-Q • Tuning oscillators, filters and resonators • Lo w leakage • Voltage controlled capacitor • Rugged construction
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30-Volt
45-Volt
60-Volt
MSV-34
060-C1
064-C
067-C
metelics FSCM 59365
064c
diode t86
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ML6518-302D
Abstract: No abstract text available
Text: Coaxial Pin Diode Switch 0.5 - 18.0 GHz ML 6510-300D Series V3.00 Features • B ro ad F re q u e n c y R anges • • H igh iso latio n SMA C o n n e cto rs • H erm etically Sealed • TTL C o m p atib le Description T h e ML 6 5 1 0 - 3 0 0 D S e r ie s o f S P 3 T s w it c h e s f ro m
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6510-300D
ML6518-302D
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ad9580
Abstract: application notes ad9660 AD9660 RC07 resistor RC07 through hole 5v1 diode zener 74ACTS41 AD9560 0P291GP oscillator 50mhz
Text: ANALOG DEVICES □ CPL ICs f o r L a ser s USING THE AD9660 EVALUATION BOARD Introduction The AD9660 evaluation board is comprised of two printed circuit boards. The Laser Diode Driver LDD Resource board is both a digital pattern generator and an analog reference generator (see LDD Resource Board Block Diagram). The
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AD9660
AD9660,
C36CRPX
DS1000Q
H20DF
MCM6706
OP-291GP
ad9580
application notes ad9660
RC07 resistor
RC07
through hole 5v1 diode zener
74ACTS41
AD9560
0P291GP
oscillator 50mhz
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Untitled
Abstract: No abstract text available
Text: jM kgm M an A M P company Coaxial Pin Diode Attenuator 0.5 - 18.0 GHz ML 6680-600D Series V3.00 Features • • • • • Broad Frequency Ranges High Attenuation Accuracy Low Harm onic Distortion Fast Switching Speed Low Interm odulation Products Description
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6680-600D
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ESAB34M
Abstract: H150 T460 T930
Text: ESAB34M C (5A) FAST RECOVERY DIODE : Features Insulated package by fully m olding. • £ 0 ? * « * ' * V 7 Y U t z f t M X t f f c \ .' Soft recovery, low noise. Connection Diagram High reliability I Applications High speed power switching, Maximum Ratings and Characteristics
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ESAB34M
SC-67
I95t/R89)
Shl50
H150
T460
T930
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SRFE
Abstract: AE01 AG01 ERE51 SIE01 T760 T810 T930 SI AG01 aec1
Text: E R E 5 1 , S I E O I 16A * ± '< * 7 - 9 4 * — Y : Outline Drawings — t M K E f f i j ' * t * - F _ GENERAL-USE RECTIFIER DIODE Features i's'sT y ? • Glass passivated chip • High non-repetitive peak reverse • I f —¿ ^ 3 fe ( lFSM )*''*3^'
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ERE51
SIE01
SIE01
50HzIESÃ
egTi30Â
eaTS30Â
l95t/R89
SRFE
AE01
AG01
ERE51
T760
T810
T930
SI AG01
aec1
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301L
Abstract: 2FI50F T151 T460 T760 1fm5
Text: 2 R 5 F 2 x 5 0 A FAST RECOVERY DIODE MODULE • * ttS : Features • i6ls]iIB$IH)#r$Sv,' • £ IM I8 i0 < « Short Reverse Recovery Time Variety of Connection Menu • #fiH&M Insulated Type ■ f f lii : Applications • Arc-W elders • 7 >;•— — Kffl
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2R50FC2X50A)
2FI50F
-060i
50/60HZ
11S19
l95t/R89
301L
2FI50F
T151
T460
T760
1fm5
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ae9t
Abstract: M1011 T460 T760 TP802C09 A2D0.1 a456
Text: TP802C09 ioa SCHO TTKY B A R R IER DIODE ’ Features • 1&VF Low V p Connection Diagram Super high speed switching. High reliability by planer design I Applications High speed power switching. : Maximum Ratings and Characteristics : Absolute Maximum Ratings
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TP802C09
500ns,
l95t/R89
ae9t
M1011
T460
T760
A2D0.1
a456
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