SUSTAINING Search Results

7S47

Abstract: TD62308BP N/7S47
Contextual Info: TOSHIBA-, ELECTRONIC D2 TD62308BP TD62308BP D eT| T O T 7547 OQlûTMS ñ | T-52-13-01 BIPOLAR DIGITAL INTEGRATED CIRCUI I SILICON MONOLITHIC LOW INPUT ACTIVE 1.5A DRIVER Unit in nun Features . Output Current. 1.5A Max. . High Sustaining Voltage.

TA31075S

Abstract: TA31075 murata pkm34ew TA31075F
Contextual Info: TA31075S, TA31075F TONE RINGER For Telephone . Since output circuit is of differential output, output sound pressure level can be made high. . Initiation supply voltage and sustaining supply voltage are low. . Current consumption is small. (at no-load) . Initiation current consumption can be varied with

MJE5180

Abstract: 5182 MJE5181 MJE5182
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJE5180/5181/5182 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 120V(Min)- MJE5180 = 140V(Min)- MJE5181 = 160V(Min)- MJE5182 ·Low Saturation Voltage ·Complement to Type MJE5170/5171/5172

15a transistor

Abstract: BUX40A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX40A DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 125V(Min) ·High Current Capability ·Good Linearity of hFE APPLICATIONS ·Designed for switching and linear applications in military

BD307

Abstract: BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A APPLICATIONS ·Designed for use in switching regulators, inverters, motor

vbe 10v, vce 500v NPN Transistor

Abstract: 2SC2415 NPN Transistor 1A 400V power transistor 3A vce 500v NPN Transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2415 DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min) APPLICATIONS ·Designed for high speed power switching applications.

BD501

Abstract: BD501B
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BD501/B DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 50V(Min) 80V(Min) ·High Power Dissipation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing

NPN Transistor 10A 400V

Abstract: MJ13091 dc motor specification MJ13090
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)—MJ13090 = 450V(Min)—MJ13091 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in

TIP29

Abstract: TIP30 transistors TIP30
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors TIP30 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -40V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat) = -0.7V(Max.)@IC= -1.0A ·Complement to Type TIP29

BU2725AX

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2725AX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 825V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color

npn 1000V 15A

Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in

BDT87F

Abstract: NPN Transistor VCEO 80V 100V transistor 83F BDT81F BDT83F BDT85F TC2536
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BDT81F/83F/85F/87F DESCRIPTION •DC Current Gain -hFE = 40 Min @ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F

NPN Transistor 1.5A 700V

Abstract: NPN Transistor VCEO 1200V BUV48CFI NPN 1.5A 1200V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV48CFI DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Current Capability ·Fast Switching Speed APPLICATIONS ·Designed for switching and industrial applications from

to225a

Abstract: to225aa TO-225AA to225
Contextual Info: MJE170, MJE171, MJE172 PNP , MJE180, MJE181, MJE182 (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage −

transistor bd 370

Contextual Info: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS

ER0046EJ

Contextual Info: DATA S H E E T MINIATURE SIGNAL RELAY EE2 SERIES Compact and lightweight, High breakdown voltage, Surface mounting type DESCRIPTION The EE2 series surface-mounting type sustaining high-performance of NEC EC2 series. FEATURES Compact and light weight ™ 2 form c contact arrangement

0072A

Abstract: UDQ2917EB
Contextual Info: 2917 I DUAL FVLL-BRIDGE PWM MOTOR DRIVER The UDQ2917EB motor driver is designed to drive both windings of a bipolar stepper motor or bidirectionally control two dc motors. Both bridges are capable of sustaining 45 V and include internal pulse-width modulation PWM control of the output current to 1.5 A.

GP035

Abstract: GP-035 diod* GP035 2916EB 2916LB GP 035
Contextual Info: 2916 DUAL FULL-BRIDGE PWM MOTOR DRIVERS The UDN2916B, UDN2916EB, and UDN2916LB motor drivers are designed to drive both windings of a bipolar stepper motor or bidirectionally control two dc motors. Both bridges are capable of sustaining 45 V and include internal pulse-width modulation PWM

a2917

Abstract: UDN2917EB microstep
Contextual Info: 2917 DUAL FULL-BRIDGE PWM MOTOR DRIVER << The UDN2917EB motor driver is designed to drive both windings of a bipolar stepper motor or bidirectionally control two dc motors. Both bridges are capable of sustaining 45 V and Include internal pulse-width modulation PWM control of the output current to 1.5 A.

GP-049A

Abstract: UDQ2916B
Contextual Info: mSÊÉm H DUAL FULL-BWDGE PWM MOTOR DRIVER The A2919EB and A2919ELB motor drivers are designed to drive both windings of a bipolar stepper motor or bidirectionally control two dc motors over a temperature range of -40°C to +85°C. Both bridges are capable of sustaining 45 V and include internal pulse-width modu­

Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE *Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA

PART NUMBER OF PNP 2A DPAK

Contextual Info: UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. 1 FEATURE * Collector-Emitter Sustaining Voltage VCEO sus =25V (Min) @ IC =10mA

2SC3691

Abstract: transistor 2SC3691 60V transistor npn 2a npn switching transistor 60v 60V transistor npn 3a
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3691 DESCRIPTION •Low Collector Saturation Voltage : VCE sat = 0.5V(Max)@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V (Min) ·High Switching Speed APPLICATIONS

KSC5030F

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor KSC5030F DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 800V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose