SUS 472 Search Results

2SA1046

Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275

TERMOPAR tipo k

Abstract: TERMOPAR tipo j crouzet MAS 10 programming TERMOPAR k crouzet MAS programming sonda ph TERMOPAR TIPO T millenium 2 crouzet programming manual sensor termopar tipo j Crouzet Millenium 2 sa 20
Contextual Info: Microcontrol Soluciones de automatismos adaptadas a sus aplicaciones 08 Panorama b Controladores lógicos b Relés de control b Temporizadores www.crouzet.com Una empresa de Panorama Microcontrol Editorial Sumario Reconocido desde hace más de 40 años por la calidad de sus temporizadores,

2SC124

Abstract: BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 80 Vdc (Min) — 2N6436

Motorola case 77

Abstract: 2N3055 BU108 2sc15 bdw93c applications BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 25 Vdc (Min) @ IC = 10 mAdc

MJE34 equivalent

Abstract: BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 60 Vdc (Min) — 2N5879, 2N5881

equivalent to tip162

Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors 2N6338 2N6339 2N6340 2N6341* . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) — 2N6338

ST T4 3580

Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc

Contextual Info: IBM2520L8767 Preliminary ATM Resource Manager Features other uses DRAM devices. A single array of memory can be used in systems whose sus­ tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications. • Configurable for sustained performance of up to

Contextual Info: IBM2520L8767 IBM Processor for ATM Resources Features pendent: one can use SRAM devices while the other uses DRAM devices. A single array of memory can be used in systems whose sus­ tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications.

10A 600 VOLT DIODE

Abstract: transistor 13a 600v westinghouse DIODES 827 d transistor KE72
Contextual Info: 7294621 POWEREX INC ]>Ë 72T4b21 0000141 5 | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E F Q H J K L M N P Q R S T U ' Inches 4.13 Max 3.86 ±.01 3.190 .236 .472 1.33 Max .335 .709 .827 .276 .453 .472 .394 .531 .197 1.181 .787 .118 .213 T-33-35 10 Amperes

pj 86 diode

Abstract: pj 84 diode pj 48 diode PJ 63 diode ke92 Westinghouse diode WESTINGHOUSE ELECTRIC motor ac WESTINGHOUSE dc motor KE924503 pj 17 diode
Contextual Info: 7294621 POWEREX INC Tâ Dim A B C D E F G H J K L M N O P Q R S T U V w X y b Ë J 72TML51 ODODTSO t. Inches 3.70 3.150+,020 .768 .79 .394 3.386 2.913 2.48 1.89 .472 .236 .118 .197 .551 .709 .059 .217 1.50 1.22 1.181 .339 .118 .295 T-33-35 Millimeters 94 80±.25

KE724502

Abstract: DARLINGTON 20A WESTINGHOUSE ELECTRIC powerex cd KE72
Contextual Info: 7 2 9 4 6 2 1 POWERËX INC T Ë Ï>I"| 72=141.51 00QCH47 b | Six/Pac Darlington TRANSISTOR Modules Dim A B C D E Inches 4.80 4.33 3.86 .236 .472 .213+ ¿°08 F G H I J K L M N O P .394 .709 .512 .276 1.02 1.5 1.18 .787 .315 .157 T-33-35 20 Amperes 450 Volts

varistor 472 SUS

Abstract: RFP22N10 rpf22n10 AN-7514 AN9321 C150 IAS150 Fairchild UL file MOS transistor transient overvoltages in 220V 355a transistor
Contextual Info: Single Pulse Unclamped Inductive Switching: A Rating System Application Note orpoion, minctor, ngle lse ncla ped duce witch g: A ating sm Failure Mechanisms Early Power MOSFET devices, not designed to be rugged, failed when the parasitic bipolar transistor indigenous to the

RFP22N10

Abstract: varistor 472 SUS rpf22n10 Landis AN9321 C150 IAS150 VARISTOR TESTING INTERSIL IAS25
Contextual Info: Single Pulse Unclamped Inductive Switching: A Rating System Application Note Unexpected transients in electrical circuits are a fact of life. The most potentially damaging transients enter a circuit on the power source lines feeding the circuit. Power control and

varistor 472 SUS

Abstract: rpf22n10 Fairchild UL file MOS transistor UHC MOS AN75 AN-7514 C150 IAS150 RFP22N10 uis test
Contextual Info: Single Pulse Unclamped Inductive Switching: A Rating System Application Note Failure Mechanisms Early Power MOSFET devices, not designed to be rugged, failed when the parasitic bipolar transistor indigenous to the vertical DMOS process turned on. Figure 1 shows a cross

AN-7514

Abstract: varistor 472 SUS bt 2328 RFP22N10 rpf22n10 C150 IAS150
Contextual Info: Single Pulse Unclamped Inductive Switching: A Rating System Application Note Title N93 bt nse cla ed uce itch :A ting sm utho Unexpected transients in electrical circuits are a fact of life. The most potentially damaging transients enter a circuit on the power source lines feeding the circuit. Power control and

UZF4115

Abstract: UZF411 A6061-T6 uzfxmr1 UZFXMR2 COPPER C3604 UZFTNB8 UZFTP8 M1021 UZFRV41
Contextual Info: UZF41/42/43 series 0.6.10 13:16 Page 1 NEW OPTICAL FIBER DIGITAL/AUTO/MANUAL SETTING TYPE PHOTOELECTRIC SENSORS UZF41/42/43 Series SIMPLE OPERATION WITH INNOVATIVE JOG SWITCH SETTING AND MANUAL SETTING TYPE Simple Operation UZF41/42 series Uses an innovative highly operable jog

rca 40411

Abstract: 40411 transistor 40411 RCA 40411 transistor rca 40407 rca 40408 RCA 40408 transistor RCA-40406 40408 40411 rca
Contextual Info: G E SOLI» STATE 3 8 7 5 08 1 DE | 3fl?Safll D0174bS 4 □ 1 G E” S O L I D STATE Ó1E 17465 D u e n e ra i-ru ro o s e Ho^ r J i ^ n f ll f t t n r a T -3 3 -/3 -' File Numbei'219 40406> 40407j 40408, 40411 TERM IN AL DESIGNATIONS Silicon N-P-N and P-N-P

BIPOLAR TRANSISTOR

Abstract: bipolar power transistor vce 600 volt ks53 KS534505
Contextual Info: POIiJEREX INC m Tfl n /m 1 E J ? 5 ^ 4 t 5 1 OOOEOEfl _ x Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412) 925-7272 t p 3 3-^ D KS534505 S in C flB B ip o ld l" Transistor Module 50 Amperes/600 Volts Description Powerex Single Bipolar Transistor

CS 213 Polymer protection

Abstract: CS 213 Polymer 39-29-3046 MAX6590 MAX1544 irf 343 so-8 Multimeter tektronix dmm 157 IRF 548 C71-C78 100w amp sanyo
Contextual Info: MAXIM 19-2870; Rev 0; 04/03 MAX1544/MAX1545 MAX1544/MAX1545 Evaluation Kits Pentium is a registered trademark of Intel Corp. Hammer is a trademark of Advanced Micro Devices, Inc. QuickPWM is a trademark of Maxim Integrated Products, Inc. Features

KC324515

Contextual Info: POWEREX INC 3^ E D 75^41,21 00D43ME 3 H P R X m um m x Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15 69 7 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 KC324515 Common Em itter Dual Darlington

Contextual Info: POWEREX INC 3TE D • 7 5 ^ 2 1 m u m e x _ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 0DG4370 fl H P R X KE7235A1 Six-Darlington

diode B15A

Abstract: 10A 600 VOLT DIODE bipolar power transistor vce 600 volt D 1437 transistor BIPOLAR TRANSISTOR KS53 1S697 KS534505 7214F 300 volt 16 ampere transistor
Contextual Info: PO ü l E R E X INC Tfl fOHBHBT DE J ? ä e1 4 t, 5 1 OOOaOEfl _ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 925-7272 T p D KS534505 Single Bipolar Transistor Module 50 Amperes/600 Volts Description Powerex Single Bipolar Transistor

transistor z5

Abstract: EV150 m5 isolated dual transistor kd325515 KD325
Contextual Info: POÜIEREX INC 3TE D • TSTMbSl 00G45S2 4WEREX K D 3255Î5 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15 6 9 7 412 9 2 5 - 7 2 7 2 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14