SURFACE MOUNT TRANSISTOR AG QR Search Results

GP 836 DIODE

Contextual Info: Q P PA-6232 Surface Mount Cascadable Amplifier 2000 to 6000 MHz avantek FEATURES APPLICATIONS • Frequency Range: 2000 to 6000 MHz • High Dynamic Range • Noise Figure: 4.3 dB Typ • Surface Mount Package • Wideband Receiver Gain Block • IF Gain Block

4963 MOSFET

Abstract: 6N diode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTV6N100E TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1-5 OHM N-Channel Enhancement-Mode Silicon Gate The D3PAK package has the capability of housing the largest chip

LT 8224 diode

Abstract: DIODE LT 6202 LT 8224 LT 8224 TRANSISTOR
Contextual Info: AVANTEK INC MME ]> n m % t 0007=100 4 BIAVA PPA-4132 •• Surface Mount Cascadable Amplifier 1000 to 4000 MHz ^ ^ ' " F '? 4 - 3 'O l A V A N T E K FEATURES APPLICATIONS • Frequency Range: 1000 to 4000 MHz • High Dynamic Range • Noise Figure: 4.5 dB (Typ

25N50E

Abstract: 501 mosfet transistor mount chip transistor 332
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information M TV25N 50E TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 25 AMPERES 500 VOLTS RDS on = °-200 OHM N-Channel Enhancement-Mode Silicon Gate The D3pAK package has the capability of housing the largest chip

transistor z3m

Abstract: Z3M IC z3m Transistor Z3M Y
Contextual Info: MOTOROLA Order this document by MTB75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTB75N03HDL HDTMOS E-FET High Density Pow er FET D2PAK for Surface Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS on = 9 mOHM

supper mosfets

Abstract: k 351 transistor
Contextual Info: MOTOROLA Order this document by MTD20N03HDUD SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD20N03HDL HDTMOS E-FET™ High Density Pow er FET DPAK for S urface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand

5n06v

Abstract: 5n06 TMOS E-FET AG3B CASE369A
Contextual Info: MOTOROLA ‘ SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet \.:,$\:, >,* J,J, >, TMOS V ‘M Power Field Effect Transistor DPAK For Surface Mount w . .,. “7 $z,a<e~ .,Y ‘.’.$;$,:X ,., ,~, N-Channel Enhancement Mode Silicon Gate ~~d*:bOWER

tb7104

Contextual Info: MOTOROLA Order this document by MTB71040L/D SEMICONDUCTOR TECHNICAL DATA Advance Information TMOS E-FET High Energy Pow er FET D2PAK for S u rface Mount TMOS POWER FET 60 AMPERES 100 VOLTS RDS on = 0-022 Q N-Channel Enhancement-Mode Silicon Gate The D2 PAK package has the capability of housing a larger die

Contextual Info: W J -A 9 /S M A 9 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT POWER: +22 dBm TYP. HIGH THIRD ORDER I.P.: +35 dBm (TYP.) WIDE POWER SUPPLY RANGE: +15 T O +24 VOLTS Outline Drawings A9 Specifications* 0450 n

surface mount transistor ag qr

Abstract: amps ciss hen vd
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD4N20E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 200 VOLTS n DS on = 12 OHM N-Channel Enhancement-Mode Silicon Gate

MTD1N80E

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD1N80E TMOS E-FET ™ Power Field Effect Transistor DPAK for Surface Mount Motorola Preferrod Device TM OS POWER FET 1.0 AMPERES 800 VOLTS N-Channel Enhancement-Mode Silicon Gate T h is high vo lta g e M O S F E T uses an a d vanced te rm inatio n

2p50e

Abstract: 4336 MOSFET TB2P5
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TB 2P 50E TM O S E -FE T ™ Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 2.0 AMPERES 500 VOLTS P-Channel Enhancement-Mode Silicon Gate The D2pAK package has the capability of housing a larger die

TH 2190 Transistor

Abstract: 30p06v 30P06 P06V TH 2190 mosfet transistor 4413
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet M T B 3 0 P 06 V TM O S V™ P o w er Field E ffe c t T ran sisto r D 2PAK for S u rfa c e M ount M o to ro la P r e fe r re d D e v ic e TMOS POWER FET 30 AMPERES 60 VOLTS P-Channel Enhancement-Mode Silicon Gate

bergquist ge

Abstract: transistor dk qq
Contextual Info: MOTOROLA Order this document by MMSF3300/D SEMICONDUCTOR TECHNICAL DATA Advance Information MMSF3300 WaveFET Power Surface Mount Products HDTMOS Single N -C hannel Field E ffect Transistor SINGLE TMOS POWER MOSFET 30 VOLTS RDS on = 12.5 m il W aveFET™ de vice s are an ad van ced series of po w e r M O SFETs w hich utilize M o to ro la ’s

33N10E

Contextual Info: MOTOROLA O rder this docum ent by M TB33N10E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTB33N10E TMOS E-FET ™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TMOS POWER FET 33 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M TV32N 25E TM O S E -FE T ™ P ow er Field E ffe c t T ran sisto r D3PAK for S u rfa c e M ount TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate The D3pAK package has Ihe capability of housing the largest chip

Contextual Info: APR 2 2 »9 3 rz 7 S G S -T H O M S O N « œ i[L iM R l g S L3035 SUBSCRIBER LINE INTERFACE CIRCUIT ADVANCE DATA • M O NOCHIP SILICON SLIC O PTIM IZED FOR US APPLICATIO NS COX / DLC / PABX ■ IM PLEM ENTS ALL KEY FEATURES OF THE BO RSCHT FUNCTION ■ 63dB TYPICAL LONG ITUDINAL BALANCE

Contextual Info: MOTOROLA O rder this docum ent by M TB55N10EL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB55N10EL TMOS E-FET High Energy Power FET D2PAK for Surface Mount TMOS POWER FET 55 AMPERES 100 VOLTS RDS on = 0.026 Q N-Channel Enhancement-Mode Silicon Gate

Brain Box Mini 88 plus manual

Abstract: MILITARY QUALIFIED DIP SWITCHES 95B04RA pico fuses color coding 3x4 keypad grayhill 71BD36-3119 grayhll DYNAMICS RESEARCH CORP. ENCODERS KSH 200 TRANSISTOR Cross reference 78M02S
Contextual Info: N um ber 1 A n ISO -9001 C om pany Product Catalog M o n tre a l • O ttaw a • Toronto • W innipeg • Calgary • Vancouver Lannie Reynolds Account Manager -W.T.I. Manufacturers Representatives li. 7370 Bramalea Road, Unit 6617, Mississauga, Ontario L5S1N6

Transistor b865

Abstract: TAMP-72LN Box 34C MCL TAMP-72LN 3x62
Contextual Info: Low Noise Amplifier TAMP-72LN+ 7TO- Z The Big Deal: s (IGH 0 D"MTYP s ,OW.OISE&IGURE D"TYP s )NTEGRATED"IAS-ATCHINGAND 3TABILITY#IRCUITS 0RICING$11.95 (QTY 5-49) Product Overview: 4HE4!-0 ,. 2O(3COMPLIANT UTILIZESADVANCED% 0(%-4TECHNOLOGYINASINGLESTAGELOWNOISE

d4n01

Abstract: D4N0 mdf4n MAN TGS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F4N 01H D Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors M otorola Preferred Device M iniM O S'“ devices are an advanced series of power MOSFETs which utilize M o to ro la ’s High Cell D ensity HDTMOS process.

the t.amp 1400

Abstract: the t.amp 1500 iso 1460 TAMP-1521GLN PL-293 TB-468
Contextual Info: Low Noise Amplifier TAMP-1521GLN+ 7TO- Z The Big Deal: s 5LTRA,OW.OISE&IGURE D"TYP s (IGH 0 D"MTYP s (IGH'AIN D"TYP s )NTEGRATED"IAS-ATCHINGAND 3TABILITY#IRCUITS 0RICING$14.95 (QTY 5-49) Product Overview:

Contextual Info: MOTOROLA O rder this docum ent by M TD6N20E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD6N20E TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 200 VOLTS N-Channel Enhancement-Mode Silicon Gate

DC04 display

Abstract: how to test POWER MOSFET with digital multimeter tektronix 576 curve tracer VISHAY VT 300 WEIGHT INDICATOR TSMC 0.35Um FLUKE 79 manual THERMAL ELECTRIC COOLER hp 4274A 532 nm laser diode PHOTO TRANSISTOR ppt
Contextual Info: Quality And Reliability Report 2005 DC04-0001 Page 1 of 79