SURFACE MOUNT TRANSISTOR A4 Search Results

Contextual Info: KSH340 KSH340 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I-PAK, “- I” Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor

Contextual Info: KSH350 KSH350 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I-PAK, “- I” Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor

KSH350

Contextual Info: KSH350 KSH350 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I-PAK, “- I” Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor

KSH340

Abstract: surface mount transistor A4
Contextual Info: KSH340 KSH340 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I-PAK, “- I” Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor

surface mount transistor A4

Abstract: MARKING A4 transistor
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHEMA4PT SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-553 * High current gain.

ML2011

Abstract: HSJ1636-011020 JACK3 2SC1815 pcb MOUNT JACK CONNECTOR headphone HSJ1636 2sc1815 transistor hrs connector 30 pin LM4922 QFN32
Contextual Info: ML2011 reference board specification Revision A2 Date: 2006/06/19 ML2011 Reference board circuit diagram  Any surface mount transistor that can drive LED is OK.  Any surface mount LED is OK. DVDD Tr1 2SC1815 LED1 R4 10k ohm S1 DVDD ML2011 QFN32 5 TP1 connecter 50pins

CHEMA4GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHEMA4GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-553 * High current gain.

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose

Contextual Info: MJD31/31C NPN Epitaxial Silicon Transistor Features • • • • • General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31C

Contextual Info: MJD31/31C NPN Epitaxial Silicon Transistor Features • • • • • General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31C

mark a7 sot23 DIODE

Abstract: GRM188R71H104K Y2 sot23 mark MARK Y6 Transistor Y5 sot23 C0603C224K4RAC C1608X5R0J106M C1608X7R1H104K GRM188R60J106M GRM188R71H221K
Contextual Info: 19-0855; Rev 0; 7/07 MAX17010 Evaluation Kit Features The MAX17010 evaluation kit EV kit is a fully assembled and tested surface-mount printed circuit board (PCB) that provides the voltages and features required for active-matrix, thin-film transistor (TFT), liquid-crystal

Contextual Info: b 3 b ? 2 5 4 G l O l b l G Sbb « M O T b O rder th is data sheet by MUN5211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor TVansistor NPN Silicon Surface Mount Transistor With M onolithic Bias Resistor N etw ork M UN5211T1 M UN5212T1 M UN5213T1

sot-23 Marking 3D

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High Surface Mount SOT-23 Package 150oC Junction Temperature Voltage Transistor

TRANSISTOR a43

Contextual Info: Cascadable Amplifier 100 to 3200 MHz A43/ SMA43 V3 Features Product Image • ULTRAWIDE BANDWIDTH: 10-3200 MHz • EXCELLENT GAIN BLOCK: 11.5 dB TYP. • MEDIUM OUTPUT POWER: +8.5 dBm (TYP.) Description The A43 RF amplifier is a discrete hybrid design, which uses

TRANSISTOR a43

Abstract: CA43 SMA43
Contextual Info: A43 / SMA43 Cascadable Amplifier 100 to 3200 MHz Rev. V3 Features Product Image • ULTRAWIDE BANDWIDTH: 10-3200 MHz • EXCELLENT GAIN BLOCK: 11.5 dB TYP. • MEDIUM OUTPUT POWER: +8.5 dBm (TYP.) Description The A43 RF amplifier is a discrete hybrid design, which uses

5-146281-4

Abstract: A411 CA411 SMA411 W1618
Contextual Info: A411 / SMA411 Cascadable Amplifier 10 to 400 MHz Rev. V3 Features • • • • Product Image LOW NOISE FIGURE: 3.0 dB TYP. HIGH EFFICIENCY: 16 mA at +5 Vdc HIGH THIRD ORDER I.P.: +29 dBm at +8 Vdc (TYP.) MEDIUM OUTPUT LEVEL:+14.5 dBm at +8 Vdc (TYP.)

SE110N

Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
Contextual Info: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)

Contextual Info: Cascadable Amplifier 1000 to 4000 MHz A4012 / SMA4012 V3 Features • • • • Product Image WIDE BANDWIDTH: 1.0 to 4.0 GHz TYP. HIGH GAIN: 18 dB (TYP.) MEDIUM OUTPUT POWER: +15.5 dBm (TYP.) LOW NOISE FIGURE: 3.5 dB (TYP.) Description The A4012 microwave amplifier is a discrete hybrid design,

TRANSISTOR a45

Contextual Info: Cascadable Amplifier 1000 to 4000 MHz A45/ SMA45 V3 Features • • • • Product Image HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.5 dB (TYP.) HIGH OUTPUT POWER: +19.5 dBm (TYP.) GaAs FET DESIGN Description The A45 RF amplifier is a discrete hybrid design, which uses

TRANSISTOR a45

Contextual Info: Cascadable Amplifier 1000 to 4000 MHz A45-1/ SMA45-1 V3 Features • • • • Product Image WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN Description The A45-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

Contextual Info: Cascadable Amplifier 1000 to 4000 MHz A4011 / SMA4011 V3 Features • • • • Product Image LOW NOISE FIGURE: 2.0 dB TYP. MEDIUM OUTPUT POWER: +18.3 dBm (TYP.) HIGH EFFICIENCY: 65 mA (TYP.) @ +5 Vdc PHEMT AMPLIFIER Description The A4011 microwave amplifier is a discrete hybrid design,

A4012

Abstract: CA4012 MAAM-008738-CA4012 SMA4012
Contextual Info: A4012 / SMA4012 Cascadable Amplifier 1000 to 4000 MHz Rev. V3 Features • • • • Product Image WIDE BANDWIDTH: 1.0 to 4.0 GHz TYP. HIGH GAIN: 18 dB (TYP.) MEDIUM OUTPUT POWER: +15.5 dBm (TYP.) LOW NOISE FIGURE: 3.5 dB (TYP.) Description The A4012 microwave amplifier is a discrete hybrid design,

CA4011

Abstract: A4011 SMA4011
Contextual Info: A4011 / SMA4011 Cascadable Amplifier 1000 to 4000 MHz Rev. V3 Features • • • • Product Image LOW NOISE FIGURE: 2.0 dB TYP. MEDIUM OUTPUT POWER: +18.3 dBm (TYP.) HIGH EFFICIENCY: 65 mA (TYP.) @ +5 Vdc PHEMT AMPLIFIER Description The A4011 microwave amplifier is a discrete hybrid design,

CA45

Abstract: SMA45 TRANSISTOR a45
Contextual Info: A45 / SMA45 Cascadable Amplifier 1000 to 4000 MHz Rev. V3 Features • • • • Product Image HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.5 dB (TYP.) HIGH OUTPUT POWER: +19.5 dBm (TYP.) GaAs FET DESIGN Description The A45 RF amplifier is a discrete hybrid design, which uses