SUP90N08 Search Results
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Vishay Siliconix SUP90N08-7M7P-E3MOSFET N-CH 75V 90A TO220AB |
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SUP90N08-7M7P-E3 | Tube |
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Vishay Siliconix SUP90N08-6M8P-E3MOSFET N-CH 75V 90A TO220AB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SUP90N08-6M8P-E3 | Tube |
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SUP90N08 Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SUP90N08-06 | Vishay Siliconix | MOSFETs | Original | |||
SUP90N08-06 SPICE Device Model |
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N-Channel 75-V (D-S) 175°C MOSFET | Original | |||
SUP90N08-4M8P-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A TO220AB | Original | |||
SUP90N08-6M8P-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A TO220AB | Original | |||
SUP90N08-7M7P-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A TO220AB | Original | |||
SUP90N08-8M2P-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 90A TO220AB | Original |
SUP90N08 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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74281Contextual Info: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested |
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SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74281 | |
SUP90N08-6M8PContextual Info: SUP90N08-6m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0068 at VGS = 10 V 90d 75 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT |
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SUP90N08-6m8P O-220AB SUP90N08-6m8P-E3 18-Jul-08 SUP90N08-6M8P | |
Contextual Info: SUP90N08-8m2P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 75 0.0082 at VGS = 10 V ID (A) 90 d • • • • Qg (Typ) 58 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Material categorization: |
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SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification |
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SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SUP90N08-6m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0068 at VGS = 10 V 90d 75 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC |
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SUP90N08-6m8P 2002/95/EC O-220AB SUP90N08-6m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
74281
Abstract: sup90n08-4m8p
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SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 11-Mar-11 74281 sup90n08-4m8p | |
Contextual Info: SUP90N08-6m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0068 at VGS = 10 V 90d 75 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC |
Original |
SUP90N08-6m8P 2002/95/EC O-220AB SUP90N08-6m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
74281Contextual Info: SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d d 0.006 at VGS = 8 V 90 0.0085 at VGS = 6 V 90d • TrenchFET Power MOSFETS • 175 °C Junction Temperature |
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SUP90N08-4m8P O-220AB SUP90N08-4m8P-E3 08-Apr-05 74281 | |
74281
Abstract: sup90n08-4m8p
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Original |
SUP90N08-4m8P O-220AB SUP90N08-4m8P-E3 18-Jul-08 74281 sup90n08-4m8p | |
Contextual Info: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification |
Original |
SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
S8206
Abstract: S-82069
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SUP90N08-7m7P 18-Jul-08 S8206 S-82069 | |
Contextual Info: SUP90N08-6m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0068 at VGS = 10 V 90d 75 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC |
Original |
SUP90N08-6m8P 2002/95/EC O-220AB SUP90N08-6m8P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested |
Original |
SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SUP90N08-8m2P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 75 0.0082 at VGS = 10 V ID (A) 90 d • • • • Qg (Typ) 58 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Material categorization: |
Original |
SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SUP90N08-8m2P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 75 0.0082 at VGS = 10 V ID (A) 90 d • • • • Qg (Typ) 58 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Material categorization: |
Original |
SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
74355
Abstract: sup90n08-4m8p
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SUP90N08-4m8P 18-Jul-08 74355 sup90n08-4m8p | |
AN609Contextual Info: SUP90N08-4m8P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. |
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SUP90N08-4m8P AN609 03-Jan-08 | |
ua 7809
Abstract: 7809 transistor 7809 VOLTAGE sd 7809 SUP90N08-06
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SUP90N08-06 S-71518Rev. 23-Jul-07 ua 7809 7809 transistor 7809 VOLTAGE sd 7809 SUP90N08-06 | |
74281Contextual Info: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested |
Original |
SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 74281 | |
Contextual Info: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d |
Original |
SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SUP90N08-8m2P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) () 75 0.0082 at VGS = 10 V ID (A) 90 d • • • • Qg (Typ) 58 TrenchFET Power MOSFET 175 °C Junction Temperature 100 % Rg and UIS Tested Material categorization: |
Original |
SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification |
Original |
SUP90N08-7m7P O-220AB SUP90N08-7m7P-E3 18-Jul-08 | |
74281Contextual Info: SUP90N08-4m8P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 75 rDS(on) (Ω) ID (A) 0.0048 at VGS = 10 V 90d 0.006 at VGS = 8 V 90 d • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % UIS Tested Qg (Typ) |
Original |
SUP90N08-4m8P O-220AB SUP90N08-4m8P-E3 08-Apr-05 74281 | |
Contextual Info: SUP90N08-8m2P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 75 0.0082 at VGS = 10 V 90d 58 • TrenchFET Power MOSFET • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT |
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SUP90N08-8m2P O-220AB SUP90N08-8m2P-E3 11-Mar-11 |