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    SUP40 Price and Stock

    Vishay Siliconix SUP40N25-60-E3

    MOSFET N-CH 250V 40A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SUP40N25-60-E3 Tube 392 1
    • 1 $5.86
    • 10 $5.86
    • 100 $5.86
    • 1000 $2.2625
    • 10000 $2.2625
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    RS SUP40N25-60-E3 Bulk 500
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    • 1000 $4.64
    • 10000 $4.64
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    New Advantage Corporation SUP40N25-60-E3 6,000 1
    • 1 -
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    • 1000 $4.63
    • 10000 $4.32
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    Vishay Siliconix SUP40012EL-GE3

    MOSFET N-CH 40V 150A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SUP40012EL-GE3 Tube 280 1
    • 1 $3.07
    • 10 $3.07
    • 100 $3.07
    • 1000 $1.03261
    • 10000 $0.94562
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    Vishay Siliconix SUP40010EL-GE3

    MOSFET N-CH 40V 120A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SUP40010EL-GE3 Tube 97 1
    • 1 $3.95
    • 10 $3.95
    • 100 $3.95
    • 1000 $1.38721
    • 10000 $1.33313
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    Vishay Siliconix SUP40N10-30-E3

    MOSFET N-CH 100V 40A TO220AB
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    DigiKey SUP40N10-30-E3 Tube
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    Vishay Siliconix SUP40P10-43-GE3

    MOSFET P-CH 100V 36A TO220AB
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    Find more SUP40 price and stock on Findchips.com

    SUP40 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SUP40010EL-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 120A TO220AB Original PDF
    SUP40012EL-GE3 Vishay Siliconix MOSFET N-CH 40V 150A TO220AB Original PDF
    SUP40N06-25L Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SUP40N06-25L Vishay Transistor Mosfet N-CH 60V 40A 3TO-220AB Original PDF
    SUP40N06-25L Vishay Intertechnology N-Channel 60-V (D-S), 175°C MOSFET, Logic Level Original PDF
    SUP40N06-25L-E3 Vishay Transistor Mosfet N-CH 60V 40A 3TO-220AB Original PDF
    SUP40N10-30 Vishay Siliconix MOSFETs Original PDF
    SUP40N10-30-E3 Vishay Transistor Mosfet N-CH 100V 40A 3TO-220AB Original PDF
    SUP40N10-30-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 38.5A TO220AB Original PDF
    SUP40N10-30 SPICE Device Model Vishay N-Channel 100-V (D-S) 175°C MOSFET Original PDF
    SUP40N10-35 Vishay Siliconix MOSFETs Original PDF
    SUP40N10-35-E3 Vishay Transistor Mosfet N-CH 105V 37.5A 3TO-220AB Original PDF
    SUP40N25-60-E3 Vishay Transistor Mosfet N-CH 250V 40A 3TO-220AB Original PDF
    SUP40N25-60-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 40A TO220AB Original PDF
    SUP40P10-43-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 36A TO220AB Original PDF

    SUP40 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6189B

    Abstract: CB4075
    Text: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUP40N10-30-GE3 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 6189B CB4075

    SUP40P10-43

    Abstract: 4600 mosfet inverter SUP40P10-43-GE3
    Text: New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100


    Original     		PDF SUP40P10-43 2002/95/EC O-220AB SUP40P10-43-GE3 18-Jul-08 SUP40P10-43 4600 mosfet inverter SUP40P10-43-GE3

    SUP40N10-30

    Abstract: pd107
    Text: SUP40N10-30 Vishay Siliconix New Product N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V 40 0.034 @ VGS = 6 V 37.5 FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive


    Original     		PDF SUP40N10-30 O-220AB 08-Apr-05 SUP40N10-30 pd107

    Untitled

    Abstract: No abstract text available
    Text: SUP40N10-30 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 40 0.034 at VGS = 6 V 37.5 • TrenchFET Power MOSFET • 175 °C Junction Temperature Available RoHS* COMPLIANT


    Original     		PDF SUP40N10-30 O-220AB SUP40N10-30-E3 18-Jul-08

    C 5478

    Abstract: AN609 SUP40N25-60
    Text: SUP40N25-60_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF SUP40N25-60 AN609 19-Dec-07 C 5478

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUP40N25-60 www.vishay.com Vishay Siliconix N-Channel 250 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SUP40N25-60 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUP40N10-30

    Abstract: No abstract text available
    Text: SPICE Device Model SUP40N10-30 Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP40N10-30 S-71510Rev. 23-Jul-07 SUP40N10-30

    SUP40N25-60

    Abstract: No abstract text available
    Text: SUP40N25-60 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 40 0.064 @ VGS = 6 V


    Original     		PDF SUP40N25-60 O-220AB SUP40N25-60--E3 SUP40N25-60

    Untitled

    Abstract: No abstract text available
    Text: SUP40N25-60 Vishay Siliconix N-Channel 250 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 RDS(on) () ID (A) 0.060 at VGS = 10 V 40 0.064 at VGS = 6 V 38.7 • • • • Qg (Typ) 95 TrenchFET Power MOSFETS 175 °C Junction Temperature New Low Thermal Resistance Package


    Original     		PDF SUP40N25-60 2002/95/EC O-220AB SUP40N25-60-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUP40N25-60 Vishay Siliconix N-Channel 250 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 RDS(on) () ID (A) 0.060 at VGS = 10 V 40 0.064 at VGS = 6 V 38.7 • • • • Qg (Typ) 95 TrenchFET Power MOSFETS 175 °C Junction Temperature New Low Thermal Resistance Package


    Original     		PDF SUP40N25-60 2002/95/EC O-220AB SUP40N25-60-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUP40N10-30-GE3 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    C 4977

    Abstract: ON 4977 SUP40N25-60
    Text: SPICE Device Model SUP40N25-60 Vishay Siliconix N-Channel 250-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP40N25-60 S-71512Rev. 23-Jul-07 C 4977 ON 4977 SUP40N25-60

    Untitled

    Abstract: No abstract text available
    Text: SUP40N25-60 Vishay Siliconix N-Channel 250 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 250 RDS(on) () ID (A) 0.060 at VGS = 10 V 40 0.064 at VGS = 6 V 38.7 • • • • Qg (Typ) 95 TrenchFET Power MOSFETS 175 °C Junction Temperature New Low Thermal Resistance Package


    Original     		PDF SUP40N25-60 2002/95/EC O-220AB SUP40N25-60-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SUP40P10-43

    Abstract: No abstract text available
    Text: New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100


    Original     		PDF SUP40P10-43 2002/95/EC O-220AB SUP40P10-43-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SUP40P10-43

    Untitled

    Abstract: No abstract text available
    Text: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUP40N10-30-GE3 2002/95/EC O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SUP40N10-35 Vishay Siliconix N-Channel 105-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 105 • TrenchFET Power MOSFET • 175 °C Junction Temperature ID (A) 0.035 at VGS = 10 V 37.5 0.038 at VGS = 6 V 36.0 RoHS COMPLIANT TO-220AB


    Original     		PDF SUP40N10-35 O-220AB SUP40N10-35-E3 08-Apr-05

    pd107

    Abstract: SUP40N10-35
    Text: SUP40N10-35 Vishay Siliconix New Product N-Channel 105-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 105 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 37.5 0.038 @ VGS = 6 V 36.0 D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive


    Original     		PDF SUP40N10-35 O-220AB SUP40N10-35--E3 08-Apr-05 pd107 SUP40N10-35

    S4044

    Abstract: SUP40N10-35 s40445
    Text: SUP40N10-35 Vishay Siliconix New Product N-Channel 105-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 105 FEATURES rDS(on) (W) ID (A) 0.035 @ VGS = 10 V 37.5 0.038 @ VGS = 6 V 36.0 D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive


    Original     		PDF SUP40N10-35 O-220AB SUP40N10-35--E3 S-40445--Rev. 15-Mar-04 S4044 SUP40N10-35 s40445

    SUP40N10-30

    Abstract: No abstract text available
    Text: SPICE Device Model SUP40N10-30 Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF SUP40N10-30 0-to-10V 26-Apr-03 SUP40N10-30

    BR 103

    Abstract: No abstract text available
    Text: SUP40N25-60 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.060 @ VGS = 10 V 40 0.064 @ VGS = 6 V


    Original     		PDF SUP40N25-60 O-220AB SUP40N25-60--E3 S-42076--Rev. 15-Nov-04 BR 103

    SUP40N10-30-GE3

    Abstract: No abstract text available
    Text: SUP40N10-30-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 38.5 0.034 at VGS = 6 V 36 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SUP40N10-30-GE3 2002/95/EC O-220AB 18-Jul-08 SUP40N10-30-GE3

    Untitled

    Abstract: No abstract text available
    Text: New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100


    Original     		PDF SUP40P10-43 2002/95/EC O-220AB SUP40P10-43-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100


    Original     		PDF SUP40P10-43 2002/95/EC O-220AB SUP40P10-43-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SUP40P10-43 Vishay Siliconix P-Channel 100-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) - 100


    Original     		PDF SUP40P10-43 2002/95/EC O-220AB SUP40P10-43-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12