Large-Signal Characterization and Modeling of MOSFET for PA Applications
Abstract: NONLINEAR MODEL LDMOS
Text: RTUIF-28 Large-Signal Characterization and Modeling of MOSFET for PA Applications Sunyoung Lee and Tzung-Yin Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the large-signal model requirements and generation as well as the 1- and 2-tone
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RTUIF-28
inter-m2004
Large-Signal Characterization and Modeling of MOSFET for PA Applications
NONLINEAR MODEL LDMOS
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Large-signal Modeling of SiGe HBT for PA Applications
Abstract: No abstract text available
Text: IEEE BCTM 6.1 Large-signal Modeling of SiGe HBT for PA Applications Tzung-Yin Lee, Sunyoung Lee, Pete Zampardi, and Jongchan Kang Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617, USA maximizing the power added efficiency PAE . Recent emphasis for extended battery life in a metropolitan
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Modeling of SOI FET for RF Switch Applications
Abstract: No abstract text available
Text: RTU2D-2 Modeling of SOI FET for RF Switch Applications Tzung-Yin Lee and Sunyoung Lee Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents the modeling of an SOI FET for RF switch applications. Given that the HF smallsignal predictability, i.e. the insertion loss and the isolation, is
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12-stacked
12stacked
Modeling of SOI FET for RF Switch Applications
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sje 607
Abstract: SUNYO hamming code FPGA IGLOO2 COOLRUNNER-II examples 8-bit brentkung adder
Text: Power-Aware FPGA Design by Hichem Belhadj, Vishal Aggrawal, Ajay Pradhan, and Amal Zerrouki February 2009 Abstract . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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