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SUN12A60F Datasheets Context Search
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Contextual Info: SUN12A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.55Ω (Typ.) Low gate charge: Qg=38nC (Typ.) Low reverse transfer capacitance: Crss=15pF (Typ.) Lower EMI noise RoHS compliant device |
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SUN12A60F O-220F-3L SUN12A60 SDB20D45 24-JUL-14 KSD-T0O165-000 |