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Untitled Abstract: No abstract text available Text: SUN1060I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.6Ω (Typ.) • Low gate charge: Qg=27nC (Typ.) • Low reverse transfer capacitance: Crss=4.9pF (Typ.) • RoHS compliant device	Original	SUN1060I2 SUN1060 03-DEC-13 KSD-T0W002-000	PDF

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Abstract: No abstract text available
Text: SUN1060I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.6Ω (Typ.) • Low gate charge: Qg=27nC (Typ.) • Low reverse transfer capacitance: Crss=4.9pF (Typ.) • RoHS compliant device

Original

SUN1060I2 SUN1060 03-DEC-13 KSD-T0W002-000

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