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    Untitled

    Abstract: No abstract text available
    Text: SUN1060F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.6Ω (Typ.)  Low gate charge: Qg=27nC (Typ.)  Low reverse transfer capacitance: Crss=4.9pF (Typ.)  RoHS compliant device


    Original     		SUN1060F SUN1060 O-220F-3L SDB20D45 03-DEC-13 KSD-T0O129-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUN1060I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.6Ω (Typ.) • Low gate charge: Qg=27nC (Typ.) • Low reverse transfer capacitance: Crss=4.9pF (Typ.) • RoHS compliant device


    Original     		SUN1060I2 SUN1060 03-DEC-13 KSD-T0W002-000 PDF