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Contextual Info: SUN04A65F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =2.4Ω (Typ.) Low gate charge: Qg=12nC (Typ.) Low reverse transfer capacitance: Crss=6pF (Typ.) Lower EMI noise RoHS compliant device |
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SUN04A65F SUN04A65 O-220F-3L SDB20D45 09-JUL-14 KSD-T0O157-000 |