SUM65N20 DATASHEET Search Results
SUM65N20 DATASHEET Datasheets Context Search
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Contextual Info: SPICE Device Model SUM65N20-30 www.vishay.com Vishay Siliconix N-Channel 200 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SUM65N20-30 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested |
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SUM65N20-30 O-263 SUM65N20-30-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested |
Original |
SUM65N20-30 O-263 SUM65N20-30-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested |
Original |
SUM65N20-30 O-263 SUM65N20-30-E3 11-Mar-11 | |
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Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested |
Original |
SUM65N20-30 O-263 SUM65N20-30-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
|
Contextual Info: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested |
Original |
SUM65N20-30 O-263 SUM65N20-30-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |