SUD50N03 Search Results

Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available

Contextual Info: SUD50N03-7m3P Vishay Siliconix New Product N-Channel 30-V D-S WFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, e 0.0073 at VGS = 10 V 50 0.0087 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ) • Low Qgd WFET Technology • 100 % Rg and UIS Tested RoHS 15.7 nC

SUD50N03-10BP

Abstract: S0125
Contextual Info: SUD50N03-10BP New Product Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.010 @ VGS = 10 V 20 0.014 @ VGS = 4.5 V 18 V(BR)DSS (V) 30 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-10BP

Contextual Info: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available

Contextual Info: SUD50N03-11 Vishay Siliconix N-Channel 30-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.011 at VGS = 10 V 50 0.017 at VGS = 4.5 V 43 VDS (V) 30 • TrenchFET Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested

Contextual Info: SUD50N03-7m3P Vishay Siliconix New Product N-Channel 30-V D-S WFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, e 0.0073 at VGS = 10 V 50 0.0087 at VGS = 4.5 V 50 VDS (V) 30 Qg (Typ) • Low Qgd WFET Technology • 100 % Rg and UIS Tested RoHS 15.7 nC

74237

Abstract: SUD50N03-09P SUD50N03-09P-E3 SUD50N03-10BP SUD50N03-10BP-E3
Contextual Info: Specification Comparison Vishay Siliconix SUD50N03-09P vs. SUD50N03-10BP Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET TO-252 Identical Part Number Replacements SUD50N03-09P-E3 Replaces SUD50N03-10BP-E3 SUD50N03-09P Replaces SUD50N03-10BP ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

SUD50N03-10P

Contextual Info: SUD50N03-10P Siliconix N-Ch 30-V D-S , 175_C, MOSFET PWM Optimized New Product PRODUCT SUMMARY V(BR)DSS (V) 30 RDS(ON) (W) ID (A) 0.010 @ VGS = 10 V "50A 0.015 @ VGS = 4.5 V "45 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N03-10P S

7804

Abstract: AN609 SUD50N03-09P
Contextual Info: SUD50N03-09P_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SUD50N03-09P

Abstract: SUD50N03-09P-E3 SUD50N03-10P SUD50N03-10P-E3
Contextual Info: Specification Comparison Vishay Siliconix SUD50N03-09P vs. SUD50N03-10P Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET TO-252 Identical Part Number Replacements SUD50N03-09P-E3 Replaces SUD50N03-10P-E3 SUD50N03-09P Replaces SUD50N03-10P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

530165-1

Abstract: 9306 AN609 SUD50N03-11 530165
Contextual Info: SUD50N03-11_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

SUD50N03-09P

Abstract: SUD50N03-09P-E3 SUD50N03-10AP SUD50N03-10AP-E3
Contextual Info: Specification Comparison Vishay Siliconix SUD50N03-09P vs. SUD50N03-10AP Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET TO-252 Identical Part Number Replacements SUD50N03-09P-E3 Replaces SUD50N03-10AP-E3 SUD50N03-09P Replaces SUD50N03-10AP ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

SUD50N03-06P

Contextual Info: SUD50N03-06P Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0065 @ VGS = 10 V 84b 0.0095 @ VGS = 4.5 V 59b APPLICATIONS VDS (V) 30 TrenchFETr Power MOSFET 175_C Junction Temperature Optimized for Low-Side Synchronous Rectifier Operation

SUD50N03-16P

Contextual Info: SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab

Contextual Info: SUD50N03-12P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 a ID (A) 0.0120 at VGS = 10 V 17.5 0.0175 at VGS = 4.5 V 14.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC

SUD50N03-07

Abstract: B5029
Contextual Info: SPICE Device Model SUD50N03-07 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Model Subcircuit Schematic • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD50N03-10P

Contextual Info: SPICE Device Model SUD50N03-10P Vishay Siliconix N-Channel 30-V D-S , 175°°C MOSFET PWM Optimized CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit Schematic) • Level 3 MOS • Apply for both Linear and Switching Application

ON285

Abstract: SUD50N03-12P
Contextual Info: SPICE Device Model SUD50N03-12P Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD50N03-06P

Contextual Info: SUD50N03-06P New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0065 @ VGS = 10 V 25 D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation

07AP

Contextual Info: SUD50N03-07AP Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A)a, b 0.007 @ VGS = 10 V 81c 0.010 @ VGS = 4.5 V 67c D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested D TO-252

Contextual Info: SUD50N03-10CP Preliminary Information Vishay Siliconix N-Channel 30-V D-S , 175_C, MOSFET PWM Optimized FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency PRODUCT SUMMARY 30 APPLICATIONS rDS(on) (W) ID (A)a 0.010 @ VGS = 10 V 15 0.012 @ VGS = 4.5 V

SUD50N03-16P

Contextual Info: SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab

1D TRANSISTOR

Abstract: DIODE 1D
Contextual Info: T fmtc SUD50N03-10 Semiconductors N-Channel Enhancement-Mode Transistor Product Summary V DS V r DS(on) (£2) 0.010 @ VGS = 10 V 0.019 @ VGS = 4.5 V 30 I d (A) ±15 ±12 v;f _ - «I 8^ TO-252 O XX G O- Drain Connected to Tab G D S Top View Ô Order Number:

Contextual Info: SUD50N03-10 Siliconix N-Channel 30-V D-S , 175 °C MOSFET Product Summary r DS(on) ( ^ ) Id (A) 0.010 @ V o s = 10 V ±15 ±12 V d s (V ) 30 0.019 @ VGs = 4.5 V yis te * 'VV^'oe^ 1 D O T O -252 o TT A <Ji Drain Connected to Tab G D S Top View Order Number: