STW2 Search Results

stp26nm60

Abstract: STW26NM60N 26NM60N STP26NM60N 26nm60 STI26NM60N STB26NM60N STB26NM60 STF26NM60N
Contextual Info: STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V

25NM60N

Abstract: 25NM60ND STP25NM60ND 25NM60 stw25nm60nd stw25
Contextual Info: STx25NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-220FP, TO-220, TO-247 Features TAB VDSS @ TJMAX Type STB25NM60ND STF25NM60ND STP25NM60ND STW25NM60ND RDS(on) max ID 0.16 Ω 21 A 21 A(1) 21 A 21 A 650 V 3 1

f25nm60n

Abstract: P25NM60 w25nm60 F25NM60 P25NM60N w25nm60n F25NM TO247 package dissipation p25n
Contextual Info: STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features RDS on max VDSS (@Tjmax) Type ID 3 3 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O Application

W26NM60

Abstract: Zener Diodes 300v STW26NM60
Contextual Info: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM60 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

STW20NB50

Contextual Info: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW20NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

w20nk50z

Abstract: W20NK50 P20NK50Z STP20NK50Z STW20NK50Z ST L9 Zener STW20NK50Z Marking STMicroelectronics
Contextual Info: STP20NK50Z - STW20NK50Z N-CHANNEL 500V - 0.23Ω - 20A TO-220/TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STP20NK50Z STW20NK50Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V < 0.27 Ω < 0.27 Ω 20 A 20 A 190 W 190 W TYPICAL RDS(on) = 0.23 Ω

P22NM60

Abstract: STB22NM60 STB22NM60-1 STF22NM60 STP22NM60 STW22NM60 ST T4 0560 F22NM60 V4011 w22nm60
Contextual Info: STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh Power MOSFET ADVANCED DATA TYPE STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 • ■ ■ ■ ■ VDSS RDS on 600 600 600

21n90

Abstract: STB21N90K5 STW21N90K5
Contextual Info: STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH 5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet — production data Features Order codes TAB VDSS RDS on max ID PW 3

Contextual Info: GreenFIELD STW21000AT RECONFIGURABLE MICRO-CONTROLLER DATA BRIEF 1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Product Features System-On-Chip integrating an ARM926 MicroController, Embedded FPGA and embedded DRAM 16 Mbit of embedded SDRAM

Contextual Info: STP21NM60N-STF21NM60N-STW21NM60N STB21NM60N - STB21NM60N-1 N-CHANNEL 600V - 0.18 Ω - 16 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N STW21NM60N

Contextual Info: STB24N60M2, STI24N60M2, STP24N60M2, STW24N60M2 N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages Datasheet − production data Features TAB TAB Order codes 2 VDS @ TJmax RDS on max ID 650 V

STW20NM60

Abstract: Mosfet 600V, 20A
Contextual Info: STW20NM60 N-CHANNEL 600V - 0.26Ω - 20A TO-247 MDmesh Power MOSFET TYPE STW20NM60 • ■ ■ ■ ■ ■ VDSS RDS on ID 600V < 0.29 Ω 20 A TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE

s 0214

Abstract: c 1827 4.7 B2 zener B2 marking code Zener STW29NK50ZD W29NK50ZD
Contextual Info: STW29NK50ZD N-CHANNEL 500 V - 0.11Ω - 29A TO-247 Fast Diode SuperMESH MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID PW STW29NK50ZD 500 V < 0.15 Ω 29 A 350 W • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.11 Ω

W26NM60

Abstract: w26nm60 equivalent STW26NM60
Contextual Info: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 MDmesh MOSFET Table 1: General Features TYPE STW26NM60 • ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

1N400 diode

Abstract: TSV992
Contextual Info: STEVAL-ISF002V1 1.4 kW digital PFC demonstration board based on the STW23NM60N and TD352 Data brief Features • Max output power 1400 W ■ Input voltage range: 185 - 230 VAC, 50/60 Hz ■ Output voltage: 415 VDC, 5% ripple ■ PF up to 0.998 at nominal rated power

20N95K5

Abstract: STP20N95K5 STW20N95K5 schematic diagram of energy saving device STF20N95K5 zener diode 3.0 b2 B2 marking code Zener
Contextual Info: STF20N95K5 STP20N95K5, STW20N95K5 N-channel 950 V, 0.275 Ω, 15.5 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH 5 Power MOSFET Preliminary data Features Type VDSS RDS on max ID PW STF20N95K5 STP20N95K5 40 W 950 V < 0.330 Ω 15.5 A STW20N95K5 TO-220 worldwide best RDS(on)

27NM60ND

Abstract: stb27nm60 STW27NM60ND 154-06
Contextual Info: STB27NM60ND STW27NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-247 Features Type VDSS @ TJMAX RDS(on) max ID STB27NM60ND STW27NM60ND 650 V 0.16 Ω 21 A 21 A TAB • The worldwide best RDS(on)*area amongst the

25N95K3

Abstract: STW25N95K3 Stw25n95
Contextual Info: STW25N95K3 N-channel 950 V, 0.32 Ω, 22 A, TO-247 SuperMESH3 Power MOSFET Features Type VDSS RDS on max STW25N95K3 950 V < 0.36 Ω Pw ID 22 A 400 W • 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized ■ Very low intrinsic capacitances

Contextual Info: STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFETs in a TO-247 package Datasheet - production data Features Order code VDS RDS on max ID STW26NM60N 600 V 0.165 Ω 20 A • 100% avalanche tested • Low input capacitance and gate charge

Contextual Info: STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND N-channel 600 V, 0.13 Ω typ., 23 A FDmesh II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 2 3 1 3 VDS @ TJ max. RDS on max ID 0.150 Ω

STW20NB50

Contextual Info: STW20NB50 N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE STW20NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

ISD2520

Abstract: STF22NM60 W22NM60 ST T4 0560 F22N STB22NM60 STB22NM60-1 STP22NM60 STW22NM60 STW22
Contextual Info: STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 650V @ Tjmax- 0.19Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh MOSFET ADVANCED DATA TYPE VDSS @Tjmax RDS(on) STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 650 V 650 V 650 V 650 V

Contextual Info: STW240NF55 N-CHANNEL 55V - 0.0027 Ω - 120A TO-247 STripFET II POWER MOSFET TYPE STW240NF55 • ■ ■ VDSS RDS on ID(1) 55V <0.0035Ω 120A TYPICAL RDS(on) = 0.0027Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of

W26NM60

Abstract: stw26nm60
Contextual Info: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM60 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE