STROBOSCOP Search Results

IPF 830

Abstract: 0047PF TIC 1602
Contextual Info: MULTILAYER CERAM IC CHIP CAPACITORS HCT Series Low tan 5 capacitor for stroboscope circuit Features Excellent dumping characteristics (Trigger characteristic) Low tan 6 (1/2 of standard type) Low ESR (1/2 o f standard type) Excellent bias properties Our patented copper barrier term inal allow s flow soldering. This

IC tl 072

Abstract: 2SD0965 2SD965
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 0.7±0.2 • Low collector-emitter saturation voltage VCE(sat)

MAR 641 TRANSISTOR

Abstract: 2SD1934
Contextual Info: Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.9±0.2 4.9±0.2 • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage

2SB1288

Contextual Info: Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features ■ Absolute Maximum Ratings 0.7±0.1 0.7±0.2 ● Low collector to emitter saturation voltage VCE sat .

2SD966

Contextual Info: ST 2SD966 NPN Silicon Epitaxial Planar Transistor for low-frequency power amplification and stroboscope. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0873 (2SB873) Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 13.5±0.5

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Low collector-emitter saturation voltage VCE(sat)

TLN113

Abstract: TPS613
Contextual Info: TO SHIBA TPS613 TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS613 Unit in mm FOR PHOTO SENSOR PHOTOELECTRIC COUNTER FLOPPY DISK DRIVE POSITION DETECTION CONTROLLER OF HOME ELECTRIC EQUIPM ENT DETECTOR FOR STROBOSCOPIC CONTROL • 953mm resin package

2SB1288

Contextual Info: Transistor 2SB1288 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 0.7±0.2 • Features ● ● Low collector to emitter saturation voltage VCE sat . Large collector current IC.

2SB0873

Abstract: 2SB873
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0873 (2SB873) Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 ue pl d in an c se ed lud pl vi an m m es

2SB1288

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1288 Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 ue pl d in an c se ed lud pl vi an m m es si tf

2SB0873

Abstract: 2SB873
Contextual Info: Transistors 2SB0873 2SB873 Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Low collector-emitter saturation voltage VCE(sat)

2SB0976

Abstract: 2SB976
Contextual Info: Transistor 2SB0976 2SB976 Silicon PNP epitaxial planer type For low-frequency output amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). Large collector current IC. • Absolute Maximum Ratings

2SB873

Contextual Info: Transistor 2SB873 Silicon PNP epitaxial planer type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 • Features Low collector to emitter saturation voltage VCE sat . Large collector current IC.

JST tab on crimp height

Contextual Info: Emboss Tape SFH CONNECTOR 1.8mm pitch/Disconnectable Crimp style connectors Specifications ––––––––––––––––––– This low profile type connector with height of 3.0mm is designed for connection to stroboscope flash and realized space

Contextual Info: Fluke 820-2 LED Stroboscope Technical Data Rugged, compact and easy-to-use Investigate and observe potential mechanism failure with confidence on a variety of machinery, in a wide range of industries, without making physical contact with the machine. The Fluke

Contextual Info: Digital Stroboscope HHT30 Series $ ߜ NIST Calibration Certificate Included ߜ Internal Rechargeable Batteries or AC Powered Models ߜ Unique Electronic Switching Provides Continuous Cool Operation ߜ Tachometer Mode ߜ Internal Phase Shift ߜ Easy-to-Read Backlit

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: Transistors 2SD1934 Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.7±0.2 0.7±0.1 13.5±0.5 • Low collector-emitter saturation voltage VCE sat

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1288 Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1288 Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.0±0.2 8.0±0.2 5.0±0.2 • Features 13.5±0.5 0.7±0.2

2SD0966

Abstract: 2SD966
Contextual Info: Transistor 2SD0966 2SD966 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.9±0.2 4.9±0.2 • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage

2SD788

Contextual Info: 2 2SD788 !! S Silicon NPN epitaxial planar type For low-frequency power amplification Unit: mm For stroboscope 5.0±0.2 4.0±0.2 C 5.1±0.2 B • Features 0.7±0.2 A • Low collector-emitter saturation voltage VCE sat • Satisfactory operation performances at high efficiency with the lowvoltage power supply.

2SD0965

Abstract: 2SD965
Contextual Info: Transistor 2SD0965 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Unit: mm 5.0±0.2 • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage