Untitled
Abstract: No abstract text available
Text: STRH100N10FSY1 STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N10FSY1 100 V STRH100N10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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STRH100N10FSY1
STRH100N10FSY3
O-254AA
34Mev/cm
O-254AA
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STRH100N10FSY1
Abstract: STRH100N10FSY3 STRH100N10 JESD97
Text: STRH100N10FSY1 STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH100N10FSY1 100 V STRH100N10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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Original
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PDF
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STRH100N10FSY1
STRH100N10FSY3
O-254AA
34Mev/cm
STRH100N10FSY1
STRH100N10FSY3
STRH100N10
JESD97
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MIL-STD-750E
Abstract: STRH100N10 STRH100N10FSY1
Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened
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STRH100N10
O-254AA
MIL-STD-750E
STRH100N10
STRH100N10FSY1
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STRH100N10FSY3
Abstract: STRH100N10FSY1
Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH100N10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight
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STRH100N10FSY3
O-254AA
100kRad
34Mev/cm
STRH100N10FSY3
STRH100N10FSY1
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Untitled
Abstract: No abstract text available
Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N10FSY3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization
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STRH100N10FSY3
O-254AA
O-254AA
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STRH100N10
Abstract: STRH100N STRH100N10FSY1 MIL-STD-750E DSASW003741 Doc ID 17486 Rev 4 STRH100N10FSY01
Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened
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Original
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PDF
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STRH100N10
O-254AA
STRH100y
STRH100N10
STRH100N
STRH100N10FSY1
MIL-STD-750E
DSASW003741
Doc ID 17486 Rev 4
STRH100N10FSY01
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st 72a
Abstract: No abstract text available
Text: STRH100N10FSY3 N-channel 100V - 0.024Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH100N10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
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Original
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PDF
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STRH100N10FSY3
O-254AA
100kRad
34Mev/cm
O-254AA
st 72a
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Untitled
Abstract: No abstract text available
Text: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened
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Original
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PDF
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STRH100N10
O-254AA
O-254AA
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