str 6307 datasheet
Abstract: str 6307 STR 6307 POWER ic str 6307 STR S 6307 data sheet str 6307 D-71229 PAN 6595 str 6700 digital piano IC
Text: Toshiba Semiconductor New Product Guide Toshiba DVD Video Decoder TC81203TB The TC81203TB is a personal computer DVD video decoder with built-in PCI interface, digital copy protection, MPEG2 video decoder, sub-picture decoder and audio interface. This DVD video decoder may also be used as a video CD decoder. The built-in digital video
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TC81203TB
TC81203TB
256-byte
str 6307 datasheet
str 6307
STR 6307 POWER
ic str 6307
STR S 6307
data sheet str 6307
D-71229
PAN 6595
str 6700
digital piano IC
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STR 6307
Abstract: str 6307 datasheet STR 6307 POWER str 1096 toshiba gto ic str 6307 data sheet str 6307 equivalent transistor D 908 STR S 6307 TOSHIBA str module
Text: ● Outline Toshiba has developed a new 2500V-1000A insulated-gate bipolar transistor IGBT product. The product offers longer lifetime and improved reliability, and features a flat compression-bonded encapsulation package, a World first. It is suitable for high-power and high-voltage applications.
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500V-1000A
J22587
STR 6307
str 6307 datasheet
STR 6307 POWER
str 1096
toshiba gto
ic str 6307
data sheet str 6307
equivalent transistor D 908
STR S 6307
TOSHIBA str module
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MG1200V1us51
Abstract: No abstract text available
Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with
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MG1200V1US51/
MG1800V1US51
MG1200V1us51
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Untitled
Abstract: No abstract text available
Text: January '98 Optical Communication Devices Optical Transmitter Module TOLD397S-EA APPLICATION • Optical transmitter for 10Gb/s OC-192 FEATURES package 12.7 (W) x 30(D) x 9(H) mm • Butterfly pigtail • SMF µm DFB-LD integrated with EA modulator • 1.55
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OLD397S-EA
10Gb/s
OC-192)
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Untitled
Abstract: No abstract text available
Text: MG1200V1US51/ MG1800V1US51 NEW PRODUCT GUIDE Outline High-capacity, high-breakdown-voltage IGBT Insulated-Gate Bipolar Transistor power devices for power transformers and variable-speed motor control inverters are crucial components in many contemporary dayto-day applications. As such they must feature increasingly high breakdown voltages in order to keep pace with
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MG1200V1US51/
MG1800V1US51
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Untitled
Abstract: No abstract text available
Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering
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ST1200FXF21
500-V,
000-A
300-V,
200-A
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str 6307
Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module
Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering
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ST1200FXF21
500-V,
000-A
300-V,
200-A
str 6307
str 6307 datasheet
STR 6307 POWER
sg6105dz
Toshiba IGBT 1200A 3300V
toshiba gto
TOSHIBA IGBT snubber
STR S 6307
toledo
TOSHIBA str module
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str 6307
Abstract: str 6307 datasheet STR 6307 POWER ic str 6307 D-71229 STR S 6307
Text: Low Power CMOS ASIC 0.3µm 3V/2V TC222C Series Cell-Based IC PRODUCT GUIDE Overview features help to substantially reduce your chip’s power while maximizing the critical path speed. Power Comparison e.g., 100k gates, 70k-bit SRAM, 20MHz Core : 3V Core : 2V, I/Os : Single 3V
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TC222C
70k-bit
20MHz)
str 6307
str 6307 datasheet
STR 6307 POWER
ic str 6307
D-71229
STR S 6307
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str 6307 datasheet
Abstract: str 6307 D-71229 ic str 6307 STR 6307 POWER STR S 6307 TC222C Toshiba Europe NAND
Text: Low Power CMOS ASIC 0.3µm 3V/2V TC222C Series Cell-Based IC PRODUCT GUIDE Overview features help to substantially reduce your chip’s power while maximizing the critical path speed. Power Comparison e.g., 100k gates, 70k-bit SRAM, 20MHz Core : 3V Core : 2V, I/Os : Single 3V
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TC222C
70k-bit
20MHz)
str 6307 datasheet
str 6307
D-71229
ic str 6307
STR 6307 POWER
STR S 6307
Toshiba Europe NAND
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Untitled
Abstract: No abstract text available
Text: NEW PRODUCT GUIDE , Toshiba s LED line-up now includes green LED lamps which emit a brighter green than , previous products. This has been made possible by Toshiba s thin-film crystal growth technology and various other technological advances. These new high-brightness green LED lamps are suitable for a wide variety of applications.
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U1FWJ44P
Abstract: I-FLAT PACKAGE
Text: Schottky Barrier Diodes NEW PRODUCT GUIDE The U3FWK42 is a commercial Schottky barrier diode SBD based on sub-micron trench technology. The U3FWK42 seeks to improve on the existing trade-off between forward voltage (VF) and instantaneous reverse current (IR) in Schottky barrier diodes.
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U3FWK42
U3FWK42
U1FWJ44P
I-FLAT PACKAGE
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TMP94C241AF
Abstract: TMP94PS40AF DONG YANG MOTOR TMP94CS40AF TMP94C251F TMP94C241a D-71229 str 6307 datasheet QFP144 QFP160
Text: 900/H2 Series Product Line of 32-Bit Microcontrollers with Internal ROM Seamless core 900 Family Toshiba is now offering the TMP94CS40AF product line — internal ROM versions of the 32-bit 900/H2 Series from the 900-Family. Thanks to its seamless core line, Toshiba provides strong support
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900/H2
32-Bit
TMP94CS40AF
900-Family.
16-bit
900-Series
TMP94C241AF
TMP94PS40AF
DONG YANG MOTOR
TMP94C251F
TMP94C241a
D-71229
str 6307 datasheet
QFP144
QFP160
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Untitled
Abstract: No abstract text available
Text: la contact type/2a contact type (Ta=25°C) Characteristic Characteristic Graphs and Distribution Data for TLP176G and 206G Symbol Rating Unit DC Forward Current IF 50 mA Junction Temperature Tj 125 °C Tstg -55 to -125 °C Distribution Data for Major Characteristics
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TLP176G/TLP206G
TLP176G
TLP206G
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Elan Pushbutton
Abstract: 084001 EX-RF10 EX-RDRZ45 DIN EN 60068 11974 6 way rotary selector switch dc rotary selector EX-RDT WS T110
Text: Control devices and indicator lights for 22.3 mm installed diameter L Explosion protection for ATEX zones 1, 2, 21 and 22 Catalogue D-22 Ex-R Caution! The devices in this delivery range are not intended for the private consumer, i.e. they are not consumer
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D-35435
Elan Pushbutton
084001
EX-RF10
EX-RDRZ45
DIN EN 60068
11974
6 way rotary selector switch dc
rotary selector
EX-RDT WS
T110
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Untitled
Abstract: No abstract text available
Text: I I TYPE 1N251 SILICON SWITCHING DIODE [ BU LLETIN NO. DL-S 739094, S EP TEM BE R 1 9 6 6 - RE V ISED M A R C H 1973 ' M EDIUM-SPEED SWITCHING DIODE • Rugged Double-Plug Construction
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1N251
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ha 7741
Abstract: 7741 8 PIN bt458 diode p4b pin diagram of ic 4511 BROOKTREE Bt451 c3405 cr 4180 r4 p60 hall RS-343-A
Text: IV 0 5 W 9I TLC34051 ,TLC34058 256 x 12 or 24 COLOR PALETTES D 3306, O C TO BER 1990 LinEPIC 1-jim CMOS Process • Direct Interface to TMS340XX Graphics Processors • Standard Microprocessor Unit MPU Palette Interface 135-MHz Pipelined Architecture
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TLC34051
TLC34058
D3306,
135-MHz
RS-343-A
Bt45l
Bt458
TMS340XX
ha 7741
7741 8 PIN
bt458
diode p4b
pin diagram of ic 4511
BROOKTREE Bt451
c3405
cr 4180 r4
p60 hall
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TCA 3089
Abstract: tmp82c55* toshiba westinghouse co 11 tcc TMP82C255A TMP82C255AN TMP82C255AN-2 TMP82C265A TMP82C265AF TMP82C255AN-10 TMP82C55AX2
Text: TOSHIBA TMP82C255A/TMP82C265A CMOS PROGRAMMABLE PERIPHERAL INTERFACE TM P82C 255AN -2 /TM P 82C 265A F -2 TM P 82C 255A N -10 / TM P82C 265AF-10 1. GENERAL DESCRIPTION A N D FEATURES The TMP82C255A/TMP82C265A is a CMOS high speed programmable input/output
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TMP82C255A/TMP82C265A
TMP82C255AN-2
/TMP82C265AF-2
TMP82C255AN-10/TMP82C265AF-10
TMP82C255A/TMP82C265A
TMP82C55AX2.
TMP82C265A
TMP82C255A
TCA 3089
tmp82c55* toshiba
westinghouse co 11 tcc
TMP82C255AN
TMP82C265AF
TMP82C255AN-10
TMP82C55AX2
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Untitled
Abstract: No abstract text available
Text: y Spec. MITSUBISHI LSIs MH1 V645DWXPJ-6,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM PIN CONFIGURATION DESCRIPTION The MH1V645DW XPJ is 1048576-word x 64-bit dynamic ram module. This consist of four industry standard 1M x 16 dynamic RAMs in SOJ and one industry standard
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V645DWXPJ-6
4194304-BIT
1048576-BIT
64-BIT)
MH1V645DW
1048576-word
64-bit
18/Aug
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Untitled
Abstract: No abstract text available
Text: TM4EP64BJN, TM4EP64BPN, TM4EP64CJN, TM4EP64CPN 4194304 BY 64-BIT TM4EP72BJN, TM4EP72BPN, TM4EP72CJN, TM4IP72CPN 4194304 BY 72-BIT EXTEND£D-DATA*OUT DYNAMIC RAM MODULES -AUGUST 1997 Long Refresh Periods: - TM4EPxxCxN: 64 ms 4096 Cycles - TM4EPxxBxN: 32 ms (2048 Cycles)
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TM4EP64BJN,
TM4EP64BPN,
TM4EP64CJN,
TM4EP64CPN
64-BIT
TM4EP72BJN,
TM4EP72BPN,
TM4EP72CJN,
TM4IP72CPN
72-BIT
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THMY7280F1BEG-80
Abstract: TC59S6408BFT THMY7280F1BBG CS13X OA54
Text: TOSHIBA THMY7280F1 BEG-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 8,388,6O8-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7280F1BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT DRAMs and an unbufler on a printed circuit board.
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THMY7280F1BEG-80
608-WORD
72-BIT
THMY7280F1BBG
TC59S6408BFT
168-pin
PC100
THMY7280F1BEG-80
CS13X
OA54
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Untitled
Abstract: No abstract text available
Text: TM2SN64EPH 2097152 BY 64-BIT TM4SN64EPH 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES SMMS706 - MARCH 1998 Organization: - TM2SN64EPH . 2 097 152 x 64 Bits - TM4SN64EPH . 4 194 304 x 64 Bits Single 3.3-V Power Supply ±10% Tolerance Designed for 66-MHz 4-CIock Systems
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TM2SN64EPH
64-BIT
TM4SN64EPH
SMMS706
TM2SN64EPH
TM4SN64EPH
66-MHz
168-Pin
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs P r e lim i n a r y S p e c MH1 V 6 4 5 C W X P J -6 ,-7 HYPER PAGE MODE 4194304-BIT 1048576-BIT BY 64-BIT DYNAMIC RAM DESCRIPTION T he 1 M x64bit m odule is 1 048576-w ord x 64-bit d ynam ic ram m odule. This consist of four Industry standard 1M x 16 d ynam ic
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4194304-BIT
1048576-BIT
64-BIT)
x64bit
048576-w
64-bit
24/Mar
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Untitled
Abstract: No abstract text available
Text: Preliminary Spec. MITSUBISHI LSIs sssssaassK“ MH8V7245AWZJ -5, -6 HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V7245AWZJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8
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MH8V7245AWZJ
8388608-word
72-bit
MH8V7245AWZJ-5
MH8V7245AWZJ-6
MIT-DS-0091-0
22/Oct
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs Specifications subject to change without notice. MH16V7245AWJ -5, -6 HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - B IT DYNAMIC RAM DESCRIPTION PIN C O N FIG U R A TIO N The MH16V7245AWJ is 16777216-word x 72-bit dynamic ram module. This consist of eighteen industry standard
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MH16V7245AWJ
16777216-word
72-bit
MIT-DS-0099-0
22/Oct
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