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    STMicroelectronics STPSC8H065CT

    DIODE ARR SIC SCHOTT 650V TO220
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    STMicroelectronics STPSC8H065CT 35 1
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    TME STPSC8H065CT 1
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    STPSC8H065C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STPSC8H065CT STMicroelectronics Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 650V TO220AB Original PDF

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    Text: STPSC8H065C 650 V power Schottky silicon carbide diode Datasheet - production data Description A1 K A2 A2 A1 K TO-220AB STPSC8H065CT The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material


    Original
    PDF STPSC8H065C O-220AB STPSC8H065CT DocID024808