STMICROELECTRONICS DIODE MARKING CODE GP Search Results

ST MICROELECTRONICS DATE CODE MARKING

Abstract: st microelectronics datecode R20 marking EMIF04-MMC02F3 ST MICROELECTRONICS MARKING AN1235 AN1751 PM505
Contextual Info: EMIF04-MMC02F3 4 LINES EMI FILTER AND ESD PROTECTION FOR MULTIMEDIA CARD Main product characteristics: Where EMI filtering in ESD sensitive equipment is required : • MultiMedia Card for mobile phones, Personal Digital Assistant, Digital Camera, MP3 players.

R20 marking

Abstract: AN1235 AN1751 EMIF04-MMC02F3 PM505 400um ST MICROELECTRONICS DATE CODE MARKING
Contextual Info: EMIF04-MMC02F3 4 LINES EMI FILTER AND ESD PROTECTION FOR MULTIMEDIA CARD Main product characteristics: Where EMI filtering in ESD sensitive equipment is required : • MultiMedia Card for mobile phones, Personal Digital Assistant, Digital Camera, MP3 players.

CP3121

Abstract: L3000N LCP3121 SMBYW01-200 TL 431 SO8 diode gp 538 STMicroelectronics DIODE marking code GP
Contextual Info: LCP3121 Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES AND BENEFITS UNIDIRECTIONAL OVERVOLTAGE SUPPRESSOR PROGRAMMABLE BY VOLTAGE AND CURRENT: PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. PROGRAMMABLE CURRENT LIMITATION

GP6NC60HD

Abstract: L30 diode part marking STGP6NC60HD STGF6NC60HD STMicroelectronics date code TO-220 GF6NC60HD
Contextual Info: STGP6NC60HD STGF6NC60HD N-CHANNEL 6A - 600V TO-220/TO-220FP Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGP6NC60HD STGF6NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C 600 V 600 V

STGP3NC60HD

Contextual Info: STGP3NC60HD STGF3NC60HD N-CHANNEL 3A - 600V TO-220/TO-220FP Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGP3NC60HD STGF3NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C 600 V 600 V

gp 431

Abstract: CP3121 LCP3121 1/Diode gp 431 STMicroelectronics SO8 431 L3000N SMBYW01-200 GP SERIES RESISTORS a gn 137
Contextual Info: LCP3121  Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES AND BENEFITS UNIDIRECTIONAL OVERVOLTAGE SUPPRESSOR PROGRAMMABLE BY VOLTAGE AND CURRENT: PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. PROGRAMMABLE CURRENT LIMITATION

GP 048 DIODE

Abstract: STMicroelectronics SO8 431 CP3121 2.5kV ZENER DIODE diode gp 538 TR-NWT-000974 358 marking stmicroelectronics LCP3121 SMBYW01-200 L3000N
Contextual Info: LCP3121 Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES AND BENEFITS UNIDIRECTIONAL OVERVOLTAGE SUPPRESSOR PROGRAMMABLE BY VOLTAGE AND CURRENT: PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. PROGRAMMABLE CURRENT LIMITATION

gf3nc

Abstract: GP3NC60HD
Contextual Info: STGP3NC60HD STGF3NC60HD N-CHANNEL 3A - 600V TO-220/TO-220FP Very Fast PowerMESH IGBT TARGET SPECIFICATION Figure 1: Package Table 1: General Features TYPE STGP3NC60HD STGF3NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C 600 V 600 V

GP7NC60H

Abstract: TO-220 footprint STMicroelectronics Date Code DPAK STMicroelectronics to-220 date code STGP7NC60H D7NC60H STGD7NC60H STGD7NC60HT4 TO252-DPAK STMicroelectronics date code to-220
Contextual Info: STGP7NC60H - STGD7NC60H N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)

STMicroelectronics Date Code DPAK

Contextual Info: STGP7NC60H - STGD7NC60H N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)

STGD7NC60H

Abstract: GP7NC60H STGD7NC60HT4 STGP7NC60H STMicroelectronics date code TO-220
Contextual Info: STGP7NC60H - STGD7NC60H N-CHANNEL 7A - 600V TO-220/DPAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE VCES VCE sat (Max) @25°C IC @100°C STGP7NC60H STGD7NC60HT4 600 V 600 V < 2.5 V < 2.5 V 14 A 14 A • ■ ■ ■ ■ LOWER ON-VOLTAGE DROP (Vcesat)

GP7NC60HD

Abstract: GF7NC60HD gp7nc60 STGB7NC60HDT STGB7NC60HD STGB7NC60HDT4 STGF7NC60HD STGP7NC60HD gf7nc GP7NC60H
Contextual Info: STGP7NC60HD STGF7NC60HD - STGB7NC60HD N-CHANNEL 7A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGP7NC60HD STGF7NC60HD STGB7NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C

GP7NC60HD

Abstract: GF7NC60HD GP7NC60H GF7NC60 gp7nc60 GB7NC60HD STGF7NC60HD STGP7NC60HD gf7nc ST T4 1060
Contextual Info: STGP7NC60HD STGF7NC60HD - STGB7NC60HD N-CHANNEL 7A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGP7NC60HD STGF7NC60HD STGB7NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C

GP7NC60HD

Abstract: STGP7NC60HD GP7NC60H GF7NC60HD STGB7NC60HDT4 STGF7NC60HD STGB7NC60HD gp7nc60
Contextual Info: STGP7NC60HD STGF7NC60HD - STGB7NC60HD N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK Very Fast PowerMESH IGBT Figure 1: Package Table 1: General Features TYPE STGP7NC60HD STGF7NC60HD STGB7NC60HD • ■ ■ ■ ■ ■ ■ VCES VCE sat (Max) @25°C IC @100°C

Contextual Info: ESDARF03-1BF3 Ultralow capacitance ESD protection for antenna Features • ultralow diode capacitance 0.6 pF ■ Single line, protected against 15 kV ESD ■ breakdown voltage VBR = 6.0 V min. ■ Flip Chip 400 µm pitch, lead-free ■ very low leakage current

AN1751

Abstract: AN2348 MARKING R3 149-2G
Contextual Info: ESDARF03-1BF3 Ultralow capacitance ESD protection for antenna Features • ultralow diode capacitance 0.6 pF ■ Single line, protected against 15 kV ESD ■ breakdown voltage VBR = 6.0 V min. ■ Flip Chip 400 µm pitch, lead-free ■ very low leakage current

GP19NC60WD

Contextual Info: STGP19NC60WD N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT General features Type VCES STGP19NC60WD 600V VCE sat IC @100°C (max)@25°C < 2.5V 19A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility) ■ Very soft ultra fast recovery antiparallel diode

GW19NC60WD

Abstract: gw19nc60w GP19NC60WD STGP19NC60WD STGW19NC60WD JESD97
Contextual Info: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A 3 • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction

GW19NC60WD

Abstract: gw19nc60w
Contextual Info: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction

GP19NC60W

Abstract: JESD97 STGP19NC60W
Contextual Info: STGP19NC60W N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT PRELIMINARY DATA Features Type VCES STGP19NC60W 600V VCE sat IC @100°C (max)@25°C < 2.5V 22A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility)

Contextual Info: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS

GP30H

Abstract: STGP30H60DF
Contextual Info: STGB30H60DF STGP30H60DF 30 A, 600 V field stop trench gate IGBT with Ultrafast diode Target specification Features • Very high speed switching ■ Tight parameters distribution ■ Safe paralleling ■ Low thermal resistance ■ 6 µs short-circuit withstand time

ZENER MARKING C8 ST

Abstract: CAPACITOR 64 680 4J diode t25 4 L5 SD2932 neosid RG316-25 vk200 ferrite bead SD2932W diode marking 100b
Contextual Info: SD2932 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration, push-pull ■ POUT = 300 W min. with 15 dB gain @ 175 MHz Description The SD2932 is a gold metalized N-channel MOS

GP19NC60SD

Abstract: JESD97 STGP19NC60SD
Contextual Info: STGP19NC60SD N-channel 600V - 20A - TO-220 Medium frequency PowerMESH IGBT Features Type VCES STGP19NC60SD 600V VCE sat (typ)@150°C IC @100°C < 1.35V 20A • Very low on-voltage drop (VCE(sat) ■ High input impedance (voltage driven) ■ IGBT co-packaged with ultrafast freewheeling