STMICROELECTRONIC MARKING Search Results

STM32F10X-128K-EVAL

Abstract: MB542 AMPIRE AM240320L8TNQW AM240320L8TNQW mb525 MB895 STM32F10x stm32f10x manual hx8312 um0426
Contextual Info: UM0426 User manual STM3210B-EVAL evaluation board Introduction The STM3210B-EVAL is an evaluation board for STMicroelectronic’s ARMTM Cortex-M3 core-based STM32F10x 128 K microcontrollers. It is designed as a complete development environment for the STM32F10x microcontrollers with full speed USB2.0, CAN2.0A/B

STM32F10X-128K-EVAL

Abstract: AM240320L8TNQW MB525 STM32F10x AMPIRE AM240320L8TNQW AM-240320L8TNQW00H MC306-G-06Q-32 MC306-g-06q AM-240320 ILI9320
Contextual Info: UM0426 User manual STM3210B-EVAL evaluation board Introduction The STM3210B-EVAL is an evaluation board for STMicroelectronic’s ARMTM Cortex-M3 core-based STM32F10x 128K microcontrollers. It is designed as a complete development environment for the STM32F10x microcontrollers with full speed USB2.0, CAN2.0A/B

Contextual Info: STD95N04 N-CHANNEL 40V - 5.1mΩ - 80A DPAK Planar STripFET MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STD95N04 • ■ ■ Figure 1: Package VDSS RDS on ID Pw 40 V < 6.5 mΩ 80 A (*) 110 W 100% AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252)

po102

Abstract: po102bl marking a2s sot-23 P0102BL p0102b sot23 package marking AV 2t sot23 STMicroelectronic MARKING sensitive scrs STMicroelectronics 1CGK
Contextual Info: P0102BL 0.25A SCRs SENSITIVE MAIN FEATURES: A Symbol Value Unit IT RMS 0.25 A VDRM/VRRM 200 V IGT 200 µA G K A G DESCRIPTION K Thanks to highly sensitive triggering levels, the PO102BL SCR is suitable for all applications where the available gate current is limited such as

std65n55

Contextual Info: STD65N55 N-CHANNEL 55V - 8.0mΩ - 65A - DPAK MDmesh Low Voltage Power MOSFET Target Specification General features Package Type VDSS RDS on ID Pw STD65N55 55 V <10.5 mΩ 65A 110 W • SURFACE-MOUNTING DPAK (TO-252) ■ STANDARD THRESHOLD DRIVE ■ 100% AVALANCHE TESTED

Contextual Info: STD95N04 N-CHANNEL 40V - 5.1mΩ - 80A - DPAK STripFET Power MOSFET Target Specification Package General features Type VDSS RDS on ID Pw STD95N04 40 V <6.5 mΩ 80 A Note 1 110 W 3 • SURFACE-MOUNTING DPAK (TO-252) ■ STANDARD THRESHOLD DRIVE ■ 100% AVALANCHE TESTED

po102

Abstract: po102bl P0102BL marKing IGM sot-23 MARKING P2B p0102b SOT-23 marking 2s marking a2s sot-23 "tAB" sot-23 GK SOT-23
Contextual Info: P0102BL  0.25A SCRs SENSITIVE MAIN FEATURES: A Symbol Value Unit IT RMS 0.25 A V DRM/VRRM 200 V IGT 200 µA G K A G DESCRIPTION K Thanks to highly sensitive triggering levels, the PO102BL SCR is suitable for all applications where the available gate current is limited such as

JESD97

Abstract: STD95N04 STP95N04
Contextual Info: STP95N04 STD95N04 N-CHANNEL 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET Power MOSFET General features Type VDSS RDS on ID Pw STD95N04 STP95N04 40V 40V <6.5mΩ <6.5mΩ 80A 80A 110W 110W 3 • 1 STANDARD THRESHOLD DRIVE 3 1 ■ 100% AVALANCHE TESTED DPAK

40V 60A MOSFET

Abstract: B180N55 JESD97 P180N55 STB180N55 STP180N55
Contextual Info: STB180N55 STP180N55 N-CHANNEL 55V - 2.9mΩ - 120A - D²PAK - TO-220 MDmesh Low Voltage Power MOSFET TARGET SPECIFICATION General features • ■ Type VDSS RDS on ID STB180N55 55V 3.5mΩ 120A (Note 1) STP180N55 55V 3.8mΩ 120A (Note 1) 3 ULTRA LOW ON-RESISTANCE

JESD97

Abstract: STS15N4LLF3
Contextual Info: STS15N4LLF3 N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS15N4LLF3 40V <0.005Ω 15A • Optimal RDS(on)x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced SO-8 Description

po102

Abstract: po102bl P0102BL p0102b le sot
Contextual Info: P0102BL 0.25A SCRs SENSITIVE MAIN FEATURES: A Symbol Value Unit IT RMS 0.25 A VDRM/VRRM 200 V IGT 200 µA G K A c u d G DESCRIPTION ) s t( o r P K Thanks to highly sensitive triggering levels, the PO102BL SCR is suitable for all applications where the available gate current is limited such as

JESD97

Abstract: STS15N4LL
Contextual Info: STS15N4LL N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS15N4LL 40V <0.005Ω 15A • Optimal RDS(on)x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced SO-8 Description

Contextual Info: STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1mΩ - 160A - D²PAK / I²PAK / TO-220 STripFET Power MOSFET Target Specification General features Package Type VDSS RDS on ID Note 1 Pw STB270N04-1 STB270N04T4 STP270N04 40 V 40V 40V <2.9 mΩ <2.5 mΩ

Contextual Info: STD65N55 N-channel 55V - 8.0mΩ - 65A - DPAK MDmesh low voltage Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID Pw STD65N55 55V <10.5mΩ 65A 110W • Standard threshold drive ■ 100% avalanche tested 3 1 DPAK Description This N-Channel enhancement mode Power

STP185N55

Contextual Info: STB185N55 STP185N55 N-CHANNEL 55V - 2.9mΩ - 120A - D²PAK - TO-220 MDmesh Low Voltage Power MOSFET TARGET SPECIFICATION General features • ■ Type VDSS RDS on ID STB185N55 55V 3.5mΩ 120A (Note 1) STP185N55 55V 3.8mΩ 120A (Note 1) 3 ULTRA LOW ON-RESISTANCE

D-PAK

Abstract: P270N04 STB270N04-1 STP270N04 B270N04 JESD97 STB270N04
Contextual Info: STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1mΩ - 160A - TO-220 - D2PAK - I2PAK STripFET Power MOSFET General features Type VDSS RDS on ID PTOT STB270N04-1 40V <2.9mΩ 120A 330W STB270N04 40V <2.5mΩ 160A 330W STP270N04 40V <2.9mΩ 120A 330W

D100N03L

Abstract: JESD97 STD100N03L STD100N03L-1 STD100N03LT4
Contextual Info: STD100N03L-1 STD100N03L N-CHANNEL 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET MOSFET General features Package Type VDSSS STD100N03L 30 V <0.0055 Ω 80 A 1 110 W STD100N03L-1 30 V <0.0055 Ω 80 A(1) 110 W RDS(on) ID Pw 3 3 • 100%AVALANCHE TESTED

N-Channel 40V MOSFET 32a

Abstract: JESD97 STD60N55 STD60N55-1 fr 0204
Contextual Info: STD60N55-1 STD60N55 N-channel 55V - 8.0mΩ - 65A - DPAK - IPAK MDmesh low voltage Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID Pw STD60N55 55V <10.5mΩ 65A 110W STD60N55-1 55V <10.5mΩ 65A 110W • Standard threshold drive ■

B185N55

Abstract: JESD97 P185N55 STB185N55 STP185N55 JEDEC to 243 ST
Contextual Info: STB185N55 STP185N55 N-channel 55V - 2.9mΩ - 120A - D2PAK/TO-220 MDmesh low voltage Power MOSFET TARGET SPECIFICATION General features Type VDSS RDS on ID STB185N55 55V 3.5mΩ 120A(1) STP185N55 55V 3.8mΩ 120A(1) 1. Value limited by wire bonding •

Contextual Info: STB180N55 STP180N55 N-channel 55V - 2.9mΩ - 120A - D2PAK/TO-220 MDmesh low voltage Power MOSFET Target Specification General features Type VDSS RDS on ID STB180N55 55V 3.5mΩ 120A(1) STP180N55 55V 3.8mΩ 120A(1) 1. Value limited by wire bonding •

Contextual Info: STB185N55 STP185N55 N-channel 55V - 2.9mΩ - 120A - D2PAK/TO-220 MDmesh low voltage Power MOSFET Target Specification General features Type VDSS RDS on ID STB185N55 55V 3.5mΩ 120A(1) STP185N55 55V 3.8mΩ 120A(1) 1. Value limited by wire bonding •

JESD97

Abstract: STD95N04 STP95N04
Contextual Info: STD95N04 STP95N04 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET Power MOSFET General features • ■ Type VDSS RDS on ID Pw STD95N04 40V <6.5mΩ 80A 110W STP95N04 40V <6.5mΩ 80A 110W Standard threshold drive 3 1 100% avalanche tested DPAK

B180N55

Abstract: JESD97 P180N55 STB180N55 STP180N55
Contextual Info: STB180N55 STP180N55 N-channel 55V - 2.9mΩ - 120A - D2PAK/TO-220 MDmesh low voltage Power MOSFET Target Specification General features Type VDSS RDS on ID STB180N55 55V 3.5mΩ 120A(1) STP180N55 55V 3.8mΩ 120A(1) 1. Value limited by wire bonding •

Contextual Info: STS15N4LLF3 N-channel 40V - 0.0042Ω - 15A - SO-8 STripFET Power MOSFET General features Type VDSS RDS on ID STS15N4LLF3 40V <0.005Ω 15A • Optimal RDS(on)x Qg trade-off @ 4.5V ■ Conduction losses reduced ■ Switching losses reduced ) s ( ct u d