STK 100A Search Results

U630H16

Abstract: U630H16XS W2565 2ETA
Contextual Info: Obsolete - Not Recommended for New Designs U630H16XS HardStore 2K x 8 nvSRAM Die Features Description • The U630H16 has two separate modes of operation: SRAM mode and non-volatile mode, determined by the state of the NE pad. In SRAM mode, the memory operates as an ordinary static RAM. In

STK 3205

Abstract: STK 405 100 N
Contextual Info: Obsolete - Not Recommended for New Designs U630H64XS HardStore 8K x 8 nvSRAM Die Features Description • The U630H64 has two separate modes of operation: SRAM mode and non-volatile mode, determined by the state of the NE pad. In SRAM mode, the memory operates as an ordinary static RAM. In

Contextual Info: Kraft- und Dehnungssensoren. Messen, Prüfen, Überwachen. Edition 2015 Kraft- und Dehnungssensoren von ­Baumer ­verbinden b ­ ewährte ­Technologien mit ­anspruchsvollen ­Innovationen. 1 Inhalt. Einleitung 1 Displayboxen DDBF Einleitung  Übersicht Kraft- und Dehnungssensoren 

PDIP24

Abstract: U635H16 A-9215
Contextual Info: Obsolete - Not Recommended for New Designs U635H16 PowerStore 2K x 8 nvSRAM Features Description • The U635H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile

PDIP28

Abstract: U630H16 GR47 NECO STK 480
Contextual Info: Obsolete - Not Recommended for New Designs U630H16 HardStore 2K x 8 nvSRAM Features Description • The U630H16 has two separate modes of operation: SRAM mode and nonvolatile mode, determined by the state of the NE pin. In SRAM mode, the memory operates as an ordinary static RAM. In

303F

Abstract: PDIP28 U637H256
Contextual Info: U637H256 CapStore 32K x 8 nvSRAM Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25 ns Access Time ‡ 10 ns Output Enable Access Time ‡ ICC = 15 mA typ. at 200 ns Cycle Time ‡ Unlimited Read and Write Cycles to SRAM

303F

Abstract: PDIP28 U637H256 U637H256DK
Contextual Info: U637H256 CapStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25 ns Access Time ‡ 10 ns Output Enable Access Time ‡ ICC = 15 mA typ. at 200 ns Cycle Time ‡ Unlimited Read and Write Cycles

303F

Contextual Info: Obsolete - Not Recommended for New Designs UL635H256 Low Voltage PowerStore 32K x 8 nvSRAM Features Description • The UL635H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile

Contextual Info: UL634H256 Low Voltage PowerStore 32K x 8 nvSRAM Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 35 and 45 ns Access Times ‡ 15 and 20 ns Output Enable Access Times ‡ ICC = 8 mA typ. at 200 ns Cycle Time ‡ Automatic STORE to EEPROM

303F

Contextual Info: Obsolete - Not Recommended for New Designs UL631H256 SimtekLow Voltage SoftStore 32K x 8 nvSRAM Features Description • The UL631H256 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile

303F

Abstract: U631H256
Contextual Info: U631H256 SoftStore 32K x 8 nvSRAM Not Recommended For New Designs Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25 ns Access Times ‡ 10 ns Output Enable Access Times ‡ Software STORE Initiation ‡ Automatic STORE Timing

u637256dk

Abstract: 303F PDIP28 U637256
Contextual Info: U637256 CapStore 32K x 8 nvSRAM Not Recommend For New Designs Features Description ‡ CMOS non volatile static RAM 32768 x 8 bits ‡ 70 ns Access Time ‡ 35 ns Output Enable Access Time ‡ ICC = 15 mA typ. at 200 ns Cycle Time ‡ Unlimited Read and Write Cycles

u637256dk70z

Abstract: u637256dk 303F PDIP28 U637256
Contextual Info: U637256 CapStore 32K x 8 nvSRAM Features Description ‡ CMOS non volatile static RAM 32768 x 8 bits ‡ 70 ns Access Time ‡ 35 ns Output Enable Access Time ‡ ICC = 15 mA typ. at 200 ns Cycle Time ‡ Unlimited Read and Write Cycles to SRAM ‡ Automatic STORE to EEPROM

SOP24

Abstract: PDIP28 U631H16 a9235
Contextual Info: Obsolete - Not Recommended for New Designs U631H16 SimtekSoftStore 2K x 8 nvSRAM Features Description • The U631H16 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile

U632H16

Abstract: Stk 2048 11
Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM Not Recommended For New Designs Features ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ High-performance CMOS nonvolatile static RAM 2048 x 8 bits 25 ns Access Times 12 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle

U632H16

Contextual Info: U632H16 PowerStore 2K x 8 nvSRAM Features ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ High-performance CMOS nonvolatile static RAM 2048 x 8 bits 25 ns Access Times 12 ns Output Enable Access Times ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM

U631H256SM

Abstract: 303F U631H256
Contextual Info: U631H256 SoftStore 32K x 8 nvSRAM Features Description ‡ High-performance CMOS nonvolatile static RAM 32768 x 8 bits ‡ 25 ns Access Times ‡ 10 ns Output Enable Access Times ‡ Software STORE Initiation ‡ Automatic STORE Timing ‡ 106 STORE cycles to EEPROM

80w 2ch audio amplifier

Abstract: STK CLASS D amplifier stk audio amplifier STK power amplifier STK audio power amplifier STK405-120A STK-405 STK405-070A STK405-090A STK405-110A
Contextual Info: S TK Audio Power Amplifier STK405-000A Series ★2ch./I package, B Class Amplifier, ± Power Supply ★ Rl = 6 Q ★10W/ch. to 80W/ch. ★THD = 10% Recommended Maximum Ratings Operating Conditions Operating Characteristics Recommend Operating Conditions at Test Ci rcuit

STK 641

Abstract: C505C DS301 STK IC dipsw_4 CIA DSP 402 STK 6
Contextual Info: CANopen-Chip System-Manual Ausgabe Februar 2000 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG CANopen-Chip Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das

C505C

Abstract: KABEL KOMPLETT STK 641 DS301 stk 402 STK IC MM-214
Contextual Info: CANopen-Chip System-Manual Ausgabe Februar 2001 Ein Produkt eines Unternehmens der PHYTEC Technologie Holding AG CANopen-Chip Im Buch verwendete Bezeichnungen für Erzeugnisse, die zugleich ein eingetragenes Warenzeichen darstellen, wurden nicht besonders gekennzeichnet. Das

YTF840

Contextual Info: TOSHIBA De J ^ O ^ S S O í D I S C R E T E / O P T 03- 9097250 T O S H IB A 99D D IS C R E T E / O P T O 16900 QOlk^QQ D r -3 7 -/3 TOSHIBA FIELD EFFECT TRANSISTOR ¿jto siu iu i SEMICONDUCTOR YTF840 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSI)

Contextual Info: STK0160D Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage : BVDSS=600V Min. Low Crss : Crss=4.3pF(Typ.) Low gate charge : Qg=4.5nC(Typ.) Low RDS(on) : RDS(on)=11.5Ω(Max.) D D G Ordering Information

Contextual Info: STK0170 Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • High voltage: BVDSS=700V Min.  Low gate charge: Qg=4nC (Typ.)  Low drain-source On resistance: RDS(on)=12.5  Low Crss: Crss=2.5pF (Typ.)  RoHS compliant device (Max.)

STK412-750

Abstract: STK282-170-E STK350-530t stk*282-170 STK412 440 stk282 270 STK 412-770 stk412 770 STK282-170-E sanyo stk433-870
Contextual Info: Designed & produced by Triad. www.triad.uk.com Semelab Limited Coventry Road, Lutterworth Leicestershire LE17 4JB, UK Telephone: +44 0 1455 552505 Facsimile: +44 (0)1455 552612 Email: sales@magnatec-tt.com Website: www.magnatec-tt.com A subsidiary of TT electronics plc