STD20 Search Results

p20n20

Abstract: F20N20 D20N20 STD20N20T4 STD20N20 STF20N20 STP20N20 STripFET P20-N F20N
Contextual Info: STP20N20 STF20N20 - STD20N20 N-CHANNEL 200V - 0.10Ω - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET DATA BRIEF Figure 1: Package Table 1: General Features TYPE STD20N20 STF20N20 STP20N20 • ■ ■ ■ VDSS RDS on Id PW 200 V 200 V 200 V

STD20NF10

Contextual Info: STD20NF10 N-CHANNEL 100V - 0.038 Ω - 30A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STD20NF10 100 V <0.045 Ω 30 A TYPICAL RDS(on) = 0.038 Ω EXCEPTIONAL dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION

STD20NF06L

Contextual Info: STD20NF06L N-CHANNEL 60V - 0.032 Ω - 24A DPAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE STD20NF06L • ■ ■ ■ ■ VDSS RDS on ID 60 V < 0.040 Ω 24 A TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

Contextual Info: STD2098 NPN Silicon T ra n sisto r SOT-89 D im e n s io n s U nit:m m • Description • Medium Pow er A m plifier 1.5 • Purpose Type ■ Features • Pc C o lle c to r D issip a tion = 2W (C eram ic Sub state o f 4 0 X 4 0 X 0 . 7 mm used) 0.42 • Low C olle cto r S aturation Voltage :

Contextual Info: SFF16G 16 Amp. Glass Passivated Ultrafast Recovery Rectifier Voltage 200 to 600 V ITO-220AB Current 16 A • Glass Passivated Junction • High current capability 12 • The plastic material U/L recognition 94 V-0 3 • Terminals: Leads solderable per MIL-STD202

STD20NE03L

Contextual Info: STD20NE03L N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE V DSS R DS on ID STD20NE03L 30 V < 0.020 Ω 20 A TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE A 100 oC APPLICATION ORIENTED

STF20N20

Contextual Info: STP20N20 STF20N20 - STD20N20 N-CHANNEL 200V - 0.10Ω - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET PRELIMINARY DATA Figure 1: Package Table 1: General Features TYPE STD20N20 STF20N20 STP20N20 • ■ ■ ■ VDSS RDS on Id PTOT 200 V 200 V

20nf20

Abstract: 20NF2 STD20NF20
Contextual Info: STD20NF20 STF20NF20 - STP20NF20 N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW STD20NF20 200V <0.125Ω 18A 90W STF20NF20 200V <0.125Ω 18A 25W STP20NF20 200V <0.125Ω

GPF10

Contextual Info: GPF10 10 Amp. Glass Passivated Rectifier ITO-220AB Voltage 600 to 1000 V Current 10 A • Glass Passivated Junction 12 • High current capability 3 • The plastic material U/L recognition 94 V-0 • Terminals: Leads solderable per MIL-STD202 Common Cathode

25A04

Contextual Info: Mechanical Dimensions FG25A01~25A07 Description TO-220AB Mechanical Data Features Cases: TO-220AB molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Leads solderable per MIL-STD202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed:

d20nf10

Abstract: JESD97 STD20NF10 STD20NF10T4 CTJ3 D20NF
Contextual Info: STD20NF10 N-channel 100V - 0.038Ω - 100A - DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on ID STD20NF10 100V <0.045Ω 25A(1) 1. Current limited by package 3 • Exceptional dv/dt capability ■ Application oriented characterization

MBR60100PT

Contextual Info: MBR60PT 60 Amp. Schottky Barrier Rectifier TO-3P Voltage 100 V Current 60 A • Glass Passivated Junction 1 2 • High current capability 3 • The plastic material U/L recognition 94 V-0 • Terminals: Leads solderable per MIL-STD202 Common Cathode

schottky mbr

Abstract: rf1060 MBRF1060CT
Contextual Info: MBRF10CT 10 Amp. Schottky Barrier Rectifier ITO-220AB Voltage 45 to 200 V Current 10 A • Glass Passivated Junction 12 • High current capability 3 • The plastic material U/L recognition 94 V-0 • Terminals: Leads solderable per MIL-STD202 Common Cathode

Contextual Info: MBR30PT 30 Amp. Schottky Barrier Rectifier TO-3P Voltage 45 to 100 V Current 30 A • Glass Passivated Junction 1 2 • High current capability 3 • The plastic material U/L recognition 94 V-0 • Terminals: Leads solderable per MIL-STD202 Common Cathode

D20NF06L

Abstract: D20NF06L-1 JESD97 STD20NF06L STD20NF06L-1 D20NF th414
Contextual Info: STD20NF06L STD20NF06L-1 N-channel 60V - 0.032Ω - 24A - DPAK - IPAK STripFET II Power MOSFET General features • Type VDSS RDS on ID STD20NF06L 60V <0.040Ω 24A STD20NF06L-1 60V <0.040Ω 24A Exceptional dv/dt capability 3 3 2 1 ■ 100% avalanche tested

Contextual Info: FERRITE CORE Impedance measured at indicated frequencies, utilizing an HP 4191A at 25°C SUPPRESSORS Lead Material capable of meeting MIL-STD202, Method 208 solderability requirements Marking Individual part marking is not available -1 -2 -3 -4 -5 -6 -7 -8

Contextual Info: GP100 10 Amp. Glass Passivated Rectifier Voltage 600 to 1000 V TO-220AB Current 10 A 2 • Glass Passivated Junction • High current capability 12 • The plastic material U/L recognition 94 V-0 3 • Terminals: Leads solderable per MIL-STD202 Common Cathode

D20NE06

Abstract: ISD36A STD20NE06 D20NE st microelectronics MOSFET automotive
Contextual Info: STD20NE06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE ST D20NE06 • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.040 Ω 20 A TYPICAL RDS(on) = 0.032 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

Contextual Info: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A - IPAK/DPAK POWER MOS TRANSISTOR TYPE STD20N03L • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 30 V < 0.02 Ω 20 A (*) TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STB20100

Contextual Info: ST20100 STB20100 STF20100 STD20100 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N1044, Rev. A ST20100/STB20100/STF20100/STD20100 SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Converters Free-Wheeling diodes

STD20N06

Abstract: 2080A
Contextual Info: STD20N06 N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STD20N06 60 V < 0.03 Ω 20 A (*) • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

D20NE06

Abstract: D20NE STD20NE06T4
Contextual Info: STD20NE06 N-CHANNEL 60V - 0.032 Ω - 20A DPAK "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD20NE06 60 V < 0.040 Ω 20 A FEATURES SUMMARY • TYPICAL RDS(on) = 0.032 Ω ■ EXCEPTIONAL dv/dt CAPABILITY

Contextual Info: FRF16G 16 Amp. Glass Passivated Fast Recovery Rectifier ITO-220AB Voltage 400 to 1000 V Current 16 A • Glass Passivated Junction • High current capability 12 • The plastic material U/L recognition 94 V-0 3 • Terminals: Leads solderable per MIL-STD202

Contextual Info: FR10G 10 Amp. Glass Passivated Fast Recovery Rectifier Voltage 400 to 1000 V TO-220AB Current 10 A 2 • Glass Passivated Junction 1 • High current capability 23 • The plastic material U/L recognition 94 V-0 • Terminals: Leads solderable per MIL-STD202