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    STMicroelectronics STB9NC60-1

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    Quest Components STB9NC60-1 198
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    STB9NC60 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STB9NC60 STMicroelectronics N - CHANNEL 600V - 0.5Ohm -9A D 2 PAK-I 2 PAK PowerMESH II MOSFET Original PDF
    STB9NC60 STMicroelectronics N-Channel 600 V - 0.6 ohm - 9 A - D2PAK PowerMesh II MOSFET Original PDF
    STB9NC60-1 STMicroelectronics N-Channel 600 V - 0.6 ohm - 9 A - I2PAK PowerMesh II MOSFET Original PDF
    STB9NC60T4 STMicroelectronics N-Channel 600 V - 0.6 ohm - 9 A - D2PAK PowerMesh II MOSFET Original PDF

    STB9NC60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GP011

    Abstract: STB9NC60
    Text: STB9NC60  N - CHANNEL 600V - 0.5Ω - 9A D2PAK/I2PAK PowerMESH II MOSFET ν ν ν ν ν TYPE V DSS R DS on ID STB9NC60 600 V < 0.75 Ω 9 .0 A TYPICAL RDS(on) = 0.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK


    Original     		STB9NC60 GP011 STB9NC60 PDF

    STB9NC60

    Abstract: STB9NC60-1 DSASW003744
    Text: STB9NC60 STB9NC60-1 N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK PowerMesh II MOSFET TYPE STB9NC60 STB9NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600 V 600 V < 0.75 Ω < 0.75 Ω 9.0 A 9.0 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STB9NC60 STB9NC60-1 STB9NC60 STB9NC60-1 DSASW003744 PDF

    diode BY 127

    Abstract: No abstract text available
    Text: STB9NC60 STB9NC60-1 N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK PowerMesh II MOSFET TYPE STB9NC60 STB9NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600 V 600 V < 0.75 Ω < 0.75 Ω 9.0 A 9.0 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STB9NC60 STB9NC60-1 diode BY 127 PDF

    STB9NC60

    Abstract: STB9NC60-1
    Text: STB9NC60 STB9NC60-1 N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK PowerMesh II MOSFET TYPE STB9NC60 STB9NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600 V 600 V < 0.75 Ω < 0.75 Ω 9.0 A 9.0 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		STB9NC60 STB9NC60-1 STB9NC60 STB9NC60-1 PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 PDF

    irf840 power supply

    Abstract: STP3020L STP38NF06L STP6NB90FP STe30na50 STP4NB90 STN1NB80 IRF740 sT55n STD1NB60
    Text: April 2000 TO-220 VDSS RDS on max (V) (Ω) -60 30 34 50 55 60 75 80 100 150 200 250 300 Type ID(cont) DEVICES REPLACED (A) REMARKS 0.2 0.004 0.006 0.0065 0.009 0.01 0.01 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP90NF03L STP70NF3LL STP70NF03L STP60NF03L 12


    Original     		O-220 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP90NF03L STP70NF3LL STP70NF03L STP60NF03L STP60NE03L-12 STP50NF03L irf840 power supply STP3020L STP38NF06L STP6NB90FP STe30na50 STP4NB90 STN1NB80 IRF740 sT55n STD1NB60 PDF

    Complementary MOSFETs buz11

    Abstract: IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp
    Text: POWER MOSFETs IGBTs Selection Guide P T Y U T O F P H E O U Y I O U R E O P L E C N S W H O O N T R O L Y S T E M S IG B Ts IGB Ts Ts IG BTs IG B FEATURE Logic Level Fully Clamped Low Drop Fast Switching Fast Switching + Freewheeling Diode Short Circuit Proof


    Original     		STGD3NB60S STGD3NB60SD STGD7NB60S STGP10NB60S STGD7NB120S-1 O-220 ISOWATT218, PowerSO-10 Max247 STE180NE10 Complementary MOSFETs buz11 IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp PDF

    fqp60n06

    Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
    Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30 PDF