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    STMicroelectronics STB6NB90T4

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    STB6NB90 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STB6NB90 STMicroelectronics N - CHANNEL 900V - 1.7 ? - 5.8A - D 2 PAK PowerMESH MOSFET Original PDF
    STB6NB90T4 STMicroelectronics N - CHANNEL 900V - 1.7 Ohms - 5.8A - D2PAK PowerMESH MOSFET Original PDF

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    STB6NB90

    Abstract: No abstract text available
    Text: STB6NB90 N - CHANNEL 900V - 1.7Ω - 5.8A - D2PAK PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STB6NB90 900 V < 2.0 Ω 5.8 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STB6NB90 STB6NB90

    B6NB90

    Abstract: STB6NB90 it900
    Text: STB6NB90  N - CHANNEL 900V - 1.7Ω - 5.8A - D2PAK PowerMESH MOSFET PRELIMINARY DATA TYPE ST B6NB90 • ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 2.0 Ω 5.8 A TYPICAL RDS(on) = 1.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STB6NB90 B6NB90 B6NB90 STB6NB90 it900

    STB6NB90

    Abstract: No abstract text available
    Text: STB6NB90 N - CHANNEL 900V - 1.7Ω - 5.8A - D2PAK PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STB6NB90 900 V < 2.0 Ω 5.8 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		PDF STB6NB90 STB6NB90

    Untitled

    Abstract: No abstract text available
    Text: STB6NB90 N - CHANNEL 900V - 1 .7H - 5.8A - D^PAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STB 6N B90 900 V < 2.0 a 5.8 A . = TYPICAL RDS(on) 1.7 £2 . EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES


    OCR Scan     		PDF STB6NB90 O-263 P011P6/E