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    STATIC RAM 2149 Search Results

    STATIC RAM 2149 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy
    CDP1824CD/B Rochester Electronics LLC CDP1824C - 32-Word x 8-Bit Static RAM Visit Rochester Electronics LLC Buy
    CY7C09389V-9AXI Rochester Electronics CY7C09389 - 3.3 V 64 K X 18 Synchronous Dual-Port Static RAM, Industrial Temp Visit Rochester Electronics Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation

    STATIC RAM 2149 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    V62C2804096

    Abstract: No abstract text available
    Text: MOSEL VITELIC PRELIMINARY V62C2804096 512K X 8, CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The V62C2804096 is a very low power CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW CE1, and active HIGH CE2, an active LOW


    Original     		PDF V62C2804096 V62C2804096 32-Pin 36-Ball Blo081

    V62C1804096

    Abstract: No abstract text available
    Text: MOSEL VITELIC PRELIMINARY V62C1804096 512K X 8, CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The V62C1804096 is a very low power CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW CE1, and active HIGH CE2, an active LOW


    Original     		PDF V62C1804096 V62C1804096 36-Ball Buffe081

    V62C21164096

    Abstract: No abstract text available
    Text: MOSEL VITELIC PRELIMINARY V62C21164096 256K x 16, 0.20 µm CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The V62C21164096 is a 4,194,304-bit static random-access memory organized as 262,144 words by 16 bits. Inputs and three-state outputs are


    Original     		PDF V62C21164096 V62C21164096 304-bit 44-pin 48-Ball

    V62C2164096

    Abstract: No abstract text available
    Text: MOSEL VITELIC PRELIMINARY V62C2164096 256K x 16, 0.17 µm CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The V62C2164096 is a 4,194,304-bit static random-access memory organized as 262,144 words by 16 bits. Inputs and three-state outputs are


    Original     		PDF V62C2164096 V62C2164096 304-bit 44-pin 48-Ball

    V62C1164096

    Abstract: ttl 7032
    Text: MOSEL VITELIC PRELIMINARY V62C1164096 256K x 16, CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The V62C1164096 is a 4,194,304-bit static random-access memory organized as 262,144 words by 16 bits. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with


    Original     		PDF V62C1164096 V62C1164096 304-bit 48-Ball I/52-3775 ttl 7032

    Untitled

    Abstract: No abstract text available
    Text: CY7C18S CYPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 15 ns The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CEi , an active HIGH chip enable (CE2),


    OCR Scan     		PDF CY7C18S CY7C185 300-mil-wide 28-Lead CY7C185â 28-Lead 300-Mil)

    Untitled

    Abstract: No abstract text available
    Text: CY7C185 ^ CYPRESS 8K x 8 Static RAM F e a tu re s F u n c tio n a l D escrip tio n • High speed — 15 ns The CY7C185 is a high-performance CM OS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LO W chip enable


    OCR Scan     		PDF CY7C185 CY7C185 --25PC 85-25V 185-25Z 185-35PC 85-35V 185-35Z 28-Lead 300-Mil)

    2148 ram

    Abstract: nmos static ram 2149 static ram
    Text: Am2148/2149 1024 x 4 Static RAM High speed — access times as fast as 35 ns Fully static storage and interface circuitry Automatic power-down when deselected Am2148 TTL-compatible interface levels • • Low power dissipation - Am2148: 990 mW active, 165 mW power down


    OCR Scan     		PDF Am2148/2149 Am2148) Am2148: Am21L48 Am2148 Am2149 2148 ram nmos static ram 2149 static ram

    AM2149

    Abstract: AM2148 AM2149-35 AM21L48-45 AM21L48-55 AM21L49-45 AM21L49-55 nmos static ram AM21L48-70 AM2148-55
    Text: Am2148/Am2149 Am21 L48/Am21 L49 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fuily static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels


    OCR Scan     		PDF Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am2148 Am2149 1024x4. AM2149-35 AM21L48-45 AM21L48-55 AM21L49-45 AM21L49-55 nmos static ram AM21L48-70 AM2148-55

    S-22S12I

    Abstract: S-22S12R X2212 seiko s22s
    Text: S-22S12R/I 256-word x4-bit parallel NON-VOLATILE RAM The S-22S12R/I is a non-volatile CMOS RAM, com posed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 256-word x 4-bit (total 1024 bits) and


    OCR Scan     		PDF S-22S12R/I 256-word S-22S12R/I X2212 10mAtyp. S-22S12I S-22S12R seiko s22s

    Untitled

    Abstract: No abstract text available
    Text: Am2148/Am2149 Am21 L48/Am21 L49 w,a£ 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fully static storage and interface circuitry Automatic power-down when deselected Am2148 TTL-compatible interlace levels


    OCR Scan     		PDF Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am21L48 Am2148 Am2149

    AM2149

    Abstract: IG 03210 AM2148 AM2148-35 AM2149-35 AM21L48-45 AM21L48-55 AM21L48-70 AM21L49-45 AM21L49-55
    Text: Am2148/Am2149 L Am21 L48/Am21 L49 AdvS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • • High speed — access tim es as fast as 35 ns Fully static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels


    OCR Scan     		PDF Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am21L48 Am2148 Am2149 IG 03210 AM2148-35 AM2149-35 AM21L48-45 AM21L48-55 AM21L48-70 AM21L49-45 AM21L49-55

    tda 6609 cl

    Abstract: Z80 RAM data sheet TI 2905 tda 6609 wait state generator Z84C00 Z84C50 Z84COO
    Text: PRELIMINARY PRODUCT SPECIFICATION 3 > Z i I i 3 G Z84C50 J une 1989 Z80 RAM 80 Z80 CPU/2K SRAM FEATURES • Z80 CPU 2K Static RAM ■ Powerful set of 158 instructions ■ Wait State G enerator for external memory ■ ■ Low pow er consum ption TBD Typ (5V.10 MHz under RUN mode)


    OCR Scan     		PDF Z84C50 tda 6609 cl Z80 RAM data sheet TI 2905 tda 6609 wait state generator Z84C00 Z84C50 Z84COO

    Untitled

    Abstract: No abstract text available
    Text: <£ZiIi3G Pr e l im in a r y p r o d u c t S p ec ific a tio n Z84C50 J une 1989 Z80 RAM 80 Z80 CPU/2K SRAM FEATURES • Z80 CPU 2K Static RAM ■ Powerful set of 158 instructions ■ Wait State Generator for external memory ■ Power Interrupt function _


    OCR Scan     		PDF Z84C50 NonZ80

    231369

    Abstract: 2148H 2149H 2149H-1 2149H-2 2149H-3 2149HL
    Text: 2149H 1024 x 4-BIT STATIC RAM Max. Address Access Time ns Max. Chip Select Access Time (ns) 2149H-1 2149H-2 2149H-3 2149H 2149HL 35 45 55 70 70 20 25 30 30 150 150 125 20 150 150 Max. Active Current (mA) Common Data input and Output Improved Performance Margins


    OCR Scan     		PDF 2149H 2149H-1 2149H-2 2149H-3 2149H 2149HL 2148H 4096-bit 231369 2149HL

    2148H

    Abstract: 150a gto 2149H 2149H-2 2149H-3 2149HL 2149HL-3
    Text: intèf 2149H 1024 x 4-BIT STATIC RAM 2149H-3 2149H-2 Max. Address Access Time ns Max. Chip Select Access Time (ns) Max. Active Current (mA) 45 20 Fast Chip Select Access Time—20ns Maximum 2149HL-3 2149HL 70 70 55 25 30 25 30 125 125 180 180 2149H 55 180


    OCR Scan     		PDF 2149H-2 2149H-3 2149H 2149HL-3 2149HL 18-Pin 2148H 4096-bit 150a gto 2149HL

    IC 2148

    Abstract: 21L49 CY2149 2148 static ram 21l48
    Text: CY2148/CY21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR 1,024 x 4 Static R/W RAM Functional Description Features Automated power-down when dese­ lected 2148 CMOS for optimum speed/power Low power — 660 mW (commercial) — 770 mW (military) 5-volt power supply ± 10% tolerance


    OCR Scan     		PDF CY2148/CY21L48 CY2149/CY21L49 2148--55D CY2148 CY2149 38-00024-B IC 2148 21L49 2148 static ram 21l48

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54402A Advance Information 1M x 4 CMOS Dynamic RAM Static Column N PACKAGE 300-MIL SOJ CASE 822 The MCM54402A is a 0.7|i CMOS high-speed, dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with


    OCR Scan     		PDF MCM54402A MCM54402A 300-mil 100-mil 4402A MCM54402AN60

    C104A

    Abstract: C104A-0
    Text: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM Functional D escription I/0 3 is written into the memory location specified on the address pins Ao through Au). Reading the device is accomplished by taking chip enable (CE) LOW (and OE LOW for


    OCR Scan     		PDF CY7C164A CY7C166A 7C166A) C104A C104A-0

    2148 static ram

    Abstract: No abstract text available
    Text: Am2148/Am2149 Am21 L48/Am21 L49 L Adv mS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • Low power dissipation - Am2148: 990 mW active, 165 mW power down - Am21L48: 688 mW active, 110 mW power down High output drive - Up to seven standard TTL loads


    OCR Scan     		PDF Am2148/Am2149 L48/Am21 1024x4 Am2148) Am2148: Am21L48 OP000730 OP000741 OP001081 OP000771 2148 static ram

    Untitled

    Abstract: No abstract text available
    Text: CY7C164A CY7C166A 16,384 x 4 Static R/W RAM CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Output Enable OE feature (7C166A) • CMOS for optimum speed/power • High speed - 15 ns t*A • Low active power - 550 mW • Low standby power


    OCR Scan     		PDF CY7C164A CY7C166A 7C166A) CY7C164A CY7C166A 7C166A

    2148H

    Abstract: No abstract text available
    Text: in t e i 2149H 1024 x 4-BIT STATIC RAM 2149H 2149H-2 2149H-3 Max. Address Access Time ns 45 55 70 70 Max. Chip Select Access Time (ns) 20 25 30 30 180 180 180 125 Max. Active Current (mA) Fast Chip Select Access Time— 20ns Maximum 2149HL High Density 18-Pin Package


    OCR Scan     		PDF 2149H 2149H-2 2149H-3 2149HL 18-Pin 2148H 4096-bit

    2149 RAM

    Abstract: 18-PIN 21493 2149 static ram
    Text: MOS LSI T M S 2149 JL, AIL, FPL FAST 1024-W 0R D BY 4 -B IT STATIC RAM ^ _JANUARY 1982 - REVISED MAY 1982 TM S 2149 18-PIN PLASTIC A N D C E RA M IC D U A L -IN -L IN E PACKAGES 1024 X 4 Organization • TOP VIEW S in gle+5 V Supply (±10% Tolerance)


    OCR Scan     		PDF 1024-W0RD 18-PIN 2149 RAM 21493 2149 static ram

    intel 2148H

    Abstract: INTEL 3214 2148H 2149H intel 3212 2148 static ram
    Text: 2148H FAMILY 1024 x 4 BIT STATIC RAM ^iU M O IÎM Y •2148H-2 2148H-3 2148H ‘ 2148HL-3 2148HL Max. Access Time ns 45 55 70 55 TO Max. Active Current (mA) 150 *150 *150 125 125 Max. Standby Current (mA) 30 30 30 20 20 • Improved Performance Margins ■ HMOS* III Technology


    OCR Scan     		PDF 2148H 2148H-2 2148H-3 2148HL-3 2148HL 4096-bit 2144H-3/HL-3 intel 2148H INTEL 3214 2149H intel 3212 2148 static ram