STATIC CHARACTERISTICS OF IGBT Search Results

RC snubber

Abstract: snubber Snubber circuit Design
Contextual Info: Series connection of IGBTs Effective factors for voltage sharing: device characteristics driver static dynamic ∆ICES, ∆Tj ∆Tj, ∆Vgeth, ∆tdon, ∆tdoff, ∆Qrr - ∆Lwire , ∆ton, ∆toff Recommendations: use devices of one production lot smallest parameter deviations guaranteed

IGBT 3kv

Abstract: OF IGBT igbts paralleling seperate
Contextual Info: Paralleling of IGBTs Effective factors for current sharing: static dynamic commutation inductance - ∆Lσ driver - ∆Lwire , ∆ton, ∆toff device characteristics ∆Vcesat, ∆Tj ∆Tj, ∆tdon, ∆tdoff Recommendations: symmetrical design of IGBT current paths identical stray inductances

MOS Controlled Thyristor

Abstract: thyristor lifetime
Contextual Info: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT

SiC BJT

Abstract: transistor 304
Contextual Info: Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa 6-1 10 kV SiC BJTs – static, switching and reliability characteristics Siddarth Sundaresan, Stoyan, Jeliazkov, Brian Grummel, Ranbir Singh GeneSiC Semiconductor, Inc.

Contextual Info: Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's June 15-19, 2014 Waikoloa, Hawaii Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers Siddarth Sundaresan, Stoyan Jeliazkov, Hany Issa, Brian Grummel, Ranbir Singh

IC1 723

Abstract: IGBT THEORY AND APPLICATIONS IGBT parallel DIM800DDM17-A000 AN5505 failure analysis IGBT DIM800DDM17
Contextual Info: AN5505 Application Note AN5505 Parallel Operation of Dynex IGBT Modules Application Note Replaces October 2001, version AN5505-1.2 AN5505-1.3 July 2002 INTRODUCTION IGBT modules can be connected in parallel to create a switch with a higher current rating. However, successful paralleling of

73E05

Abstract: 73E-05 abb inverter protection single phase igbt based inverter 200 amps circuit 97E-05
Contextual Info: Application Note Paralleling of IGBT modules Paralleling of modules or paralleling of inverters becomes necessary, if a desired inverter rating or output current can not be achieved with a single IGBT module as switch. From an economic point of view paralleling of modules

pj 69 diode

Abstract: shottky barrier diode 100V 100A diode pj sic igbt 1000V 400 A failure analysis IGBT sic diode diode schottky 600v Cree SiC diode die 300C 600C
Contextual Info: Characterisation of 4H-SiC Schottky Diodes for IGBT Applications C. M. Johnson*, M. Rahimo*, N. G. Wright*, D. A. Hinchley*, A. B. Horsfall*, D. J. Morrison*, A. Knights* *Department of Electrical and Electronic Engineering University of Newcastle Newcastle-upon-Tyne NE1 7RU

Semiconductor Group igbt

Abstract: IGBT power loss static characteristics of igbt
Contextual Info: Connecting IGBTs in Parallel Fundamentals 1 Introduction Apart from looking for an IGBT which is designed for a particular power range there is also the possibility, particularly at high currents, of connecting two or more smaller IGBTs in parallel. Noteworthy advantages of this are a more flexible and individual organization of the layout,

Contextual Info: AND9100/D Paralleling of IGBTs Introduction http://onsemi.com High power systems require the paralleling of IGBTs to handle loads well into the 10’s and sometimes the 100’s of kilowatts. Paralleled devices can be discrete packaged devices, or bare die assembled within a module. This is done

Contextual Info: JULY 1996 ITC14415006D PRELIMINARY DATA DS4393-2.6 ITC14415006D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS 25˚C VCES 600V IC(CONT) 150A VCE(sat) 2.3V • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed.

Contextual Info: JULY 1996 ITC14407516D PRELIMINARY DATA DS4580-1.4 ITC14407516D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS 25˚C VCES 1600V IC(CONT) 75A VCE(sat) 3.3V • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed.

IGBT THEORY AND APPLICATIONS 400V

Abstract: TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861
Contextual Info: Application Note AN-1086 BVCES Testing Considerations for Ultra-thin wafer B B Depletion Stop Trench IGBTs By Chiu Ng, Al Diy, Alberto Fernandez, Vijay Bolloju Table of Contents Page

APT0405

Abstract: TRANZORB IGBT parallel DRIVE OSCILLATION GE215 g3 diode "ADVANCED POWER TECHNOLOGY EUROPE" SP6 CASE TO SINK SP6 CASE TO SINK THERMAL RESISTANCE "SP6 CASE TO SINK" THERMAL RESISTANCE capacitor RG
Contextual Info: Application note APT0405 November 2004 Parallel Connection of IGBT and MOSFET Power Modules. Serge Bontemps Product Manager Advanced Power Technology Europe Chemin de Magret 33700 Merignac, France Introduction Several dice are usually connected in parallel within high current power modules.

cm500ha-34a

Abstract: vmos CM100DY-34A CM400DY-34A series connection igbt cm200dy-34a IGBT cross CM100DU-34KA CM200DU-34KA CM300DY-34A
Contextual Info: NEW 1700V A-SERIES IGBT MODULES WITHS CSTBT AND IMPROVED FWDi By Nicholas Clark1, John Donlon1, Shinichi Iura2 1 Powerex Inc., Youngwood, PA, USA 2) Power Device Works, Mitsubishi Electric Corp., Fukuoka, Japan Abstract: This paper presents a new series of 1700V IGBT Insulated Gate Bipolar Transistor) modules using

Contextual Info: AND9068/D Reading ON Semiconductor IGBT Datasheets http://onsemi.com APPLICATION NOTE Abstract The Insulated Gate Bipolar Transistor is a power switch well suited for high power applications such as motor control, UPS and solar inverters, and induction heating. If

Contextual Info: F206NIA200SA-M105F preliminary datasheet NPC Application flowNPC2 600V/200A General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 4Ω 4Ω Vout= 230 VAC Figure 1. Buck IGBT BOOST = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 4Ω 4Ω Figure 2.

Contextual Info: F206NIA300SA-M106F preliminary datasheet NPC Application flowNPC2 600V/300A General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 4Ω 4Ω Vout= 230 VAC Figure 1. Buck IGBT BOOST = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 4Ω 4Ω Figure 2.

Rogowski Coil design

Abstract: Rogowski Coil Measurement of stray inductance for IGBT IGBT Pspice IGBT 5kV pspice high frequency igbt pwm igbt rogowski coil measurement IGBT with V-I characteristics Rogowski
Contextual Info: Research of Current Distribution in IGBT Modules with Multiple Chips in Parallel M.Bäßler1, M.Münzer1, S.Burkert2 1 eupec GmbH, Max Planck Str.5, D-59581Warstein Germany, Tel: +49-2902-764-2290, Fax: +492902-764-1150, email: marco.baessler@eupec.com 2) Otto-von-Guericke-Universität, Universitätsplatz2 Magdeburg Germany

POWER BJTs

Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time
Contextual Info: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor

Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)

STGW30NC120HD

Abstract: GW30NC120HD JESD97
Contextual Info: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)

gb10nb

Abstract: GB10NB60S GB10NB60 STGB10NB60S gp10nb60s
Contextual Info: STGB10NB60S STGP10NB60S 16 A, 600 V, low drop IGBT Features • Low on-voltage drop VCE(sat ■ High current capability TAB TAB Applications ■ Light dimmer ■ Static relays ■ Motor drive 3 3 1 TO-220 1 2 D2PAK Description This IGBT utilizes the advanced PowerMESH

Contextual Info: STGB10NB60S STGP10NB60S 16 A, 600 V, low drop IGBT Features • Low on-voltage drop VCE(sat ■ High current capability TAB TAB Applications ■ Light dimmer ■ Static relays ■ Motor drive 3 3 1 TO-220 1 2 D2PAK Description This IGBT utilizes the advanced PowerMESH