STATIC 5101 Search Results

Contextual Info: High-Reliability High-Speed CMOS Logic ICs CD54HC241/3A CD54HCT241/3A Burn-ln Test-Circuit Connections Static CD54HC/HCT241 Dynamic CD54HC/HCT241 OPEN 3,5,7,9,12, 14,16,18 Use Static II lo r /3A burn-in and Dynam ic for Life Test. STATIC BURN-IN I GROUND

54HC

Contextual Info: High-Reliability High-Speed C M O S Logic ICs CD54HC241/3A CD54HCT241/3A Burn-ln Test-Circuit Connections Static CD54HC/HCT241 Dynamic CD54HC/HCT241 OPEN 3,5,7,9,12, 14,16,18 Use Static II lo r /3A burn-in and Dynamic for Life Test. STATIC BURN-IN I GROUND

Contextual Info: 37E D - M303371 0GB5R3» •. «HAS HARRIS SEMICONS SECTOR Burn-In Test-Circuit Connections Static CD54HC/HCT241 Dynamic CD54HC/HCT241 -p s 2 -0 7 CD54HC241/3A T 'S i- S l CD54HCT241/3A Use Static II for /3A burn-in and Dynamic tor Life Test. STATIC BURN-IN 1

51018SL

Abstract: 51018SL-10 A1022 51018SL10
Contextual Info: intei* 51018SL 1M 131,072 x 8 CMOS SLOW STATIC RAM • Performance Range Parameter Symbol 51018SL-10 Unit *AA Address Access Time 100 ns t C 01/ t C02 Chip Select Access Time 100 ns tOE Output Enable Access Time 50 ns Standby Current: 100 /xA (max) Fully Static Operation

Contextual Info: MITSUBISHI LSIs M5M51016ATP,RT-15VL,-15VLL _ 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M 5M 51016A TP , R T are a 1048576-bit C M O S static RAM PIN CONFIGURATION (TOP VIEW) organized as 65536-w ord by 16-bit which are fabricated using

Contextual Info: MITSUBISHI LSIs M5M51014 J - 25, - 35, - 45 1048576-BIT 262144-WORD BY4-BIT CM0S STATIC RAM DESCRIPTION The M5M 51014 is a family of 262144-w ord by 4 -b it static RAMs, fabricated w ith the high performance CMOS silicon gate process and designed for high-speed application. These

5101L

Contextual Info: MITSUBISHI LSI« M 5L 5101LP-1 1024-BIT 256-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION This is a 256-word by 4-bit static RAM fabricated with the silicon-gate CMOS process and designed for low power dis­ PIN CONFIGURATION (TOP VIEW) sipation and easy application of battery back-up.

AUTOMATIC ROOM LIGHT CONTROLLER with visitor counter

Abstract: MIL-STD-3010 MS-90376 ASTM D2103 Ushio 1604LC semiconductors cross index JEDEC J-STD-033b D882 to 92 electronic weighing scale display
Contextual Info: 3M Electronic Solutions Division Static Control Products and Services Catalog See our products at: www.3Mstatic.com Innovations in Static Protection 3M and Dual Lock are trademarks of 3M Company. All All other other trademarks trademarks are are owned owned by

65536-WORD

Contextual Info: MITSUBISHI LSlS .«AVI*'' M5M51016ATP.RT-10VL,-1OVLL p H . •»oW- ,ar0 .»tal'1 > «'"' ^ " 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-bit CMOS static RAM organized as 65536-word by 16-bit which are fabricated using

ic 5101 ram

Abstract: 5101 RAM LH5101 LH5101-30 5101 cmos ram intel 5101 1K x 8 static ram 5101 static ram
Contextual Info: LH5101 CMOS 1K 256 4 Static RAM x FEATURES DESCRIPTION • 256 • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption: Standby: 10 (.tA x

Contextual Info: MITSUBISHI LSIs M5M51016ATP,RT-15VL,-15VLL 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-blt CMOS static RAM organized as 65536-word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of

LH5101

Abstract: LH5101-30 intel 5101 5101 static ram
Contextual Info: LH5101 CMOS 1K 256 x 4 Static RAM FEATURES DESCRIPTION • 256 x 4 bit organization • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption:

5101LP-1

Abstract: ic 5101 ram 5101L-1
Contextual Info: MITSUBISHI LSIs M5L 5101L P -1 1 0 2 4 -B IT 2 5 6 -W O R D B Y 4 -B IT CM O S STATIC R A M DESCRIPTION This is a 256-w o rd by 4 -b it static R A M fabricated w ith the silicon-gate CM OS process and designed fo r low power dis­ PIN CONFIGURATION (TOP VIEW)

PCD5101P

Abstract: PCD5101 PCD5101T
Contextual Info: A_ PCD5101 256 x 4-BIT STATIC RAM G ENERAL DESCRIPTION The PCD5101 is a very low-power 1024-bit static CMOS random access memory, organized as 256 words by 4 bits. I t is suitable fo r low power and high speed applications where battery standby power is

Contextual Info: H f l i V - - 4a _ NEC Electronics U.S.A. Inc. 16,384 X 1-BIT STATIC RAM Microcomputer Division Description Truth Table T he /U.PD2167 is a 16,384-w ord by 1-bit static M O S R AM . Using a sca led -N M O S technology, its design provides the

D882 mosfet

Abstract: AMWS121M 3M EM air ionizer tester 3M ASTM-D-991 2179 CM 3M CTK2A6-C MS90376 dust cap MIL-STD-3010 esd 20.20
Contextual Info: 3M Electronic Solutions Division Static Control Products and Services Catalog See our products at: www.3M.com/static *“RoHS Compliant 2005/95/EC” means that the product or part “Product” does not contain any of the substances in excess of the maximum concentration values in EU Directive 2002/95/EC,

HM435101

Abstract: MCM5101 intel 5101 MCM51L01C45 S5101 HM43 HM6501 MCM5101C65 MCM5101C80 MCM51L01
Contextual Info: 8 < > MOTOROLA MCM5101 MCM51L01 256x4 BIT STATIC RAM CMOS The MCM5101 fam ily o f CMOS RAMs offers ultra low power and ful­ ly static operation w ith a single 5-volt supply. The CMOS 1024-bit devices are organized in 256 words by 4 bits. Separate data inputs and

S5101L-3

Abstract: S5101L-1
Contextual Info: AMI S5101 AMERICAN MICROSYSTEMS. INC. 1024 BIT 256X4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S5101 family of 256x 4-bit ultra low power CMOS RAMs offers fully static operation with a single + 5 volt power supply. All inputs and outputs are direct­

Contextual Info: Jul ,1997 MITSUBISHI LSIs M5M51016BTPfRT-10VLf -10VLL 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM PIN CONFIGURATION (TOP VIEW) organized as 65536 word by 16-bit which are fabricated using highperformance triple polysilicon CMOS technology. The use of resistive

Contextual Info: 9 J u l ,1997 MITSUBISHI LSIs M5M51016BTP, RT-12VL, -12VLL 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of

Contextual Info: MITSUBISHI LSIs M5M51016BTP,RT-70L,-1 OL-I, -70LL,-10LL-I 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of

Contextual Info: MITSUBISHI LSIs M5M51016BTP,RT-70L,-1 OL-I, -70LL,-10LL-I 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of

Contextual Info: 9 J u l ,1997 MITSUBISHI LSIs M5M51016BTP,RT-12VL-I, -12VLL-I 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of

M5M51016ATP

Contextual Info: MITSUBISHI LSIS M5M51016ATP,RT-70L,-85L,-1 OL, -70LL,-85LL,-1 OLL 1048576-BIT 65536-WORD BY 16-BIT CM0S STATIC RAM DESCRIPTION The M 5 M 510 16A T P , RT are a 1 0 4 8 5 7 6 -b it CMOS static RAM organized as 65536 word by 1 6 - bit which PIN CONFIGURATION (TOP VIEW)