Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    STATIC 5101 Search Results

    STATIC 5101 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4CT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7AFS Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-923, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    STATIC 5101 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AUTOMATIC ROOM LIGHT CONTROLLER with visitor counter

    Abstract: MIL-STD-3010 MS-90376 ASTM D2103 Ushio 1604LC semiconductors cross index JEDEC J-STD-033b D882 to 92 electronic weighing scale display
    Text: 3M Electronic Solutions Division Static Control Products and Services Catalog See our products at: www.3Mstatic.com Innovations in Static Protection 3M and Dual Lock are trademarks of 3M Company. All All other other trademarks trademarks are are owned owned by


    Original     		2002/95/EC" 2002/95/EC, 2005/618/EC, AUTOMATIC ROOM LIGHT CONTROLLER with visitor counter MIL-STD-3010 MS-90376 ASTM D2103 Ushio 1604LC semiconductors cross index JEDEC J-STD-033b D882 to 92 electronic weighing scale display PDF

    D882 mosfet

    Abstract: AMWS121M 3M EM air ionizer tester 3M ASTM-D-991 2179 CM 3M CTK2A6-C MS90376 dust cap MIL-STD-3010 esd 20.20
    Text: 3M Electronic Solutions Division Static Control Products and Services Catalog See our products at: www.3M.com/static *“RoHS Compliant 2005/95/EC” means that the product or part “Product” does not contain any of the substances in excess of the maximum concentration values in EU Directive 2002/95/EC,


    Original     		2005/95/EC" 2002/95/EC, 2005/618/EC, D882 mosfet AMWS121M 3M EM air ionizer tester 3M ASTM-D-991 2179 CM 3M CTK2A6-C MS90376 dust cap MIL-STD-3010 esd 20.20 PDF

    Untitled

    Abstract: No abstract text available
    Text: High-Reliability High-Speed CMOS Logic ICs CD54HC241/3A CD54HCT241/3A Burn-ln Test-Circuit Connections Static CD54HC/HCT241 Dynamic CD54HC/HCT241 OPEN 3,5,7,9,12, 14,16,18 Use Static II lo r /3A burn-in and Dynam ic for Life Test. STATIC BURN-IN I GROUND


    OCR Scan     		CD54HC241/3A CD54HCT241/3A CD54HC/HCT241 2k-47k CD54HCT2423 CD54HC242 CD54HC/HCT242 PDF

    54HC

    Abstract: No abstract text available
    Text: High-Reliability High-Speed C M O S Logic ICs CD54HC241/3A CD54HCT241/3A Burn-ln Test-Circuit Connections Static CD54HC/HCT241 Dynamic CD54HC/HCT241 OPEN 3,5,7,9,12, 14,16,18 Use Static II lo r /3A burn-in and Dynamic for Life Test. STATIC BURN-IN I GROUND


    OCR Scan     		CD54HC241/3A CD54HCT241/3A CD54HC/HCT241 CD54HC/HCT241 2k-47k CD54HC242/3A CD54HCT242/3A CD54HC242 CD54HCT242 CD54HC/HCT242 54HC PDF

    Untitled

    Abstract: No abstract text available
    Text: 37E D - M303371 0GB5R3» •. «HAS HARRIS SEMICONS SECTOR Burn-In Test-Circuit Connections Static CD54HC/HCT241 Dynamic CD54HC/HCT241 -p s 2 -0 7 CD54HC241/3A T 'S i- S l CD54HCT241/3A Use Static II for /3A burn-in and Dynamic tor Life Test. STATIC BURN-IN 1


    OCR Scan     		M303371 CD54HC/HCT241 CD54HC241/3A CD54HCT241/3A 2k-47k 54HCT PDF

    51018SL

    Abstract: 51018SL-10 A1022 51018SL10
    Text: intei* 51018SL 1M 131,072 x 8 CMOS SLOW STATIC RAM • Performance Range Parameter Symbol 51018SL-10 Unit *AA Address Access Time 100 ns t C 01/ t C02 Chip Select Access Time 100 ns tOE Output Enable Access Time 50 ns Standby Current: 100 /xA (max) Fully Static Operation


    OCR Scan     		51018SL 51018SL-10 51018SL 32-Pin 51018SL-10 A1022 51018SL10 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M51016ATP,RT-15VL,-15VLL _ 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M 5M 51016A TP , R T are a 1048576-bit C M O S static RAM PIN CONFIGURATION (TOP VIEW) organized as 65536-w ord by 16-bit which are fabricated using


    OCR Scan     		1048576-BIT 65536-WORD 16-BIT) 1016A 1048576-bit 65536-w 16-bit 44-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M51014 J - 25, - 35, - 45 1048576-BIT 262144-WORD BY4-BIT CM0S STATIC RAM DESCRIPTION The M5M 51014 is a family of 262144-w ord by 4 -b it static RAMs, fabricated w ith the high performance CMOS silicon gate process and designed for high-speed application. These


    OCR Scan     		M5M51014 1048576-BIT 262144-WORD 262144-w M5M51014J 500mV PDF

    5101L

    Abstract: No abstract text available
    Text: MITSUBISHI LSI« M 5L 5101LP-1 1024-BIT 256-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION This is a 256-word by 4-bit static RAM fabricated with the silicon-gate CMOS process and designed for low power dis­ PIN CONFIGURATION (TOP VIEW) sipation and easy application of battery back-up.


    OCR Scan     		5101LP-1 1024-BIT 256-WORD 5101L PDF

    65536-WORD

    Abstract: No abstract text available
    Text: MITSUBISHI LSlS .«AVI*'' M5M51016ATP.RT-10VL,-1OVLL p H . •»oW- ,ar0 .»tal'1 > «'"' ^ " 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-bit CMOS static RAM organized as 65536-word by 16-bit which are fabricated using


    OCR Scan     		1016A 1048576-BIT 65536-WORD 16-BIT) M5M51016ATP, 1048576-bit 16-bit 44-pin PDF

    ic 5101 ram

    Abstract: 5101 RAM LH5101 LH5101-30 5101 cmos ram intel 5101 1K x 8 static ram 5101 static ram
    Text: LH5101 CMOS 1K 256 4 Static RAM x FEATURES DESCRIPTION • 256 • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption: Standby: 10 (.tA x


    OCR Scan     		LH5101 22-pin, 300-mil LH5101 LH5101-30 ic 5101 ram 5101 RAM LH5101-30 5101 cmos ram intel 5101 1K x 8 static ram 5101 static ram PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M51016ATP,RT-15VL,-15VLL 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-blt CMOS static RAM organized as 65536-word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of


    OCR Scan     		1048576-BIT 65536-WORD 16-BIT) M5M51016ATP, 1048576-blt 16-bit 44-pin 51016ATP PDF

    LH5101

    Abstract: LH5101-30 intel 5101 5101 static ram
    Text: LH5101 CMOS 1K 256 x 4 Static RAM FEATURES DESCRIPTION • 256 x 4 bit organization • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption:


    OCR Scan     		LH5101 22-pin, 300-mil 28-PIN LH5101 LH5101-30 LH5101-30 intel 5101 5101 static ram PDF

    5101LP-1

    Abstract: ic 5101 ram 5101L-1
    Text: MITSUBISHI LSIs M5L 5101L P -1 1 0 2 4 -B IT 2 5 6 -W O R D B Y 4 -B IT CM O S STATIC R A M DESCRIPTION This is a 256-w o rd by 4 -b it static R A M fabricated w ith the silicon-gate CM OS process and designed fo r low power dis­ PIN CONFIGURATION (TOP VIEW)


    OCR Scan     		5101LP-1 1024-BIT 256-WORD 450ns 5101LP-1 ic 5101 ram 5101L-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M51016BTP,RT-1 OVL-I, -10VLL-I 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of


    OCR Scan     		M5M51016BTP -10VLL-I 1048576-BIT 65536-WQRD 16-BIT M5M51016BTP, 51016BTP 44-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: H f l i V - - 4a _ NEC Electronics U.S.A. Inc. 16,384 X 1-BIT STATIC RAM Microcomputer Division Description Truth Table T he /U.PD2167 is a 16,384-w ord by 1-bit static M O S R AM . Using a sca led -N M O S technology, its design provides the


    OCR Scan     		uPD2167 384-word PD2167 20-pin, PD2167 /xPD2167D 2167DS-- PDF

    HM435101

    Abstract: MCM5101 intel 5101 MCM51L01C45 S5101 HM43 HM6501 MCM5101C65 MCM5101C80 MCM51L01
    Text: 8 < > MOTOROLA MCM5101 MCM51L01 256x4 BIT STATIC RAM CMOS The MCM5101 fam ily o f CMOS RAMs offers ultra low power and ful­ ly static operation w ith a single 5-volt supply. The CMOS 1024-bit devices are organized in 256 words by 4 bits. Separate data inputs and


    OCR Scan     		MCM5101 MCM51L01 256x4 1024-bit MCM510TMCM51L01 l/OI111 HM435101 intel 5101 MCM51L01C45 S5101 HM43 HM6501 MCM5101C65 MCM5101C80 MCM51L01 PDF

    S5101L-3

    Abstract: S5101L-1
    Text: AMI S5101 AMERICAN MICROSYSTEMS. INC. 1024 BIT 256X4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S5101 family of 256x 4-bit ultra low power CMOS RAMs offers fully static operation with a single + 5 volt power supply. All inputs and outputs are direct­


    OCR Scan     		S5101 256X4) S5101 S5101L1E S5101L1EI S5101L1C S5101L1CI S5101L1CM S5101LP S5101LE S5101L-3 S5101L-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Jul ,1997 MITSUBISHI LSIs M5M51016BTPfRT-10VLf -10VLL 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM PIN CONFIGURATION (TOP VIEW) organized as 65536 word by 16-bit which are fabricated using highperformance triple polysilicon CMOS technology. The use of resistive


    OCR Scan     		M5M51016BTPfRT-10VLf -10VLL 1048576-BIT 65536-WQRD 16-BIT M5M51016BTP, M5M51016BTP M5M51016BRT PDF

    Untitled

    Abstract: No abstract text available
    Text: 9 J u l ,1997 MITSUBISHI LSIs M5M51016BTP, RT-12VL, -12VLL 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of


    OCR Scan     		M5M51016BTP, RT-12VL, -12VLL 1048576-BIT 65536-WQRD 16-BIT 51016BTP PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M51016BTP,RT-70L,-1 OL-I, -70LL,-10LL-I 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of


    OCR Scan     		M5M51016BTP RT-70L -70LL -10LL-I 1048576-BIT 65536-WQRD 16-BIT M5M51016BTP, PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M51016BTP,RT-70L,-1 OL-I, -70LL,-10LL-I 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of


    OCR Scan     		M5M51016BTP RT-70L -70LL -10LL-I 1048576-BIT 65536-WQRD 16-BIT M5M51016BTP, PDF

    Untitled

    Abstract: No abstract text available
    Text: 9 J u l ,1997 MITSUBISHI LSIs M5M51016BTP,RT-12VL-I, -12VLL-I 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of


    OCR Scan     		M5M51016BTP RT-12VL-I, -12VLL-I 1048576-BIT 65536-WQRD 16-BIT M5M51016BTP, 51016BTP PDF

    M5M51016ATP

    Abstract: No abstract text available
    Text: MITSUBISHI LSIS M5M51016ATP,RT-70L,-85L,-1 OL, -70LL,-85LL,-1 OLL 1048576-BIT 65536-WORD BY 16-BIT CM0S STATIC RAM DESCRIPTION The M 5 M 510 16A T P , RT are a 1 0 4 8 5 7 6 -b it CMOS static RAM organized as 65536 word by 1 6 - bit which PIN CONFIGURATION (TOP VIEW)


    OCR Scan     		M5M51016ATP RT-70L -70LL -85LL 1048576-BIT 65536-WORD 16-BIT PDF