STANSON TECHNOLOGY Search Results

constant current constant voltage controller sot23

Abstract: 33xxA High operating temp Photocoupler constant current power supply circuit diagram ST433B ST433 dc constant current power supply
Contextual Info: STANSON TECHNOLOGY Constant Voltage and Constant Current Controller ST8433 Pb-Free DESCRIPTION The ST8433 is high-voltage four-terminal adjustable voltage references, with over current protection feature. The ST8433 is a one chip solution to a 2.5V precision voltage reference

MOSFET 20V 80A

Abstract: STN410D MOSFET, Enhancement, N Channel, 30V
Contextual Info: STN4 10 STN410 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN410D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using

STP413D

Abstract: TO-252 MOSFET p channel p channel enhancement mosfet P channel MOSFET 10A 115td MOSFET 20V 120A p channel power trench mosfet uis test p channel mosfet 10a 20v STP41
Contextual Info: STP413D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP413D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either

STN454D

Abstract: 100A Mosfet Stanson Technology STN454 n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR uis test APD50 MOSFET 20V 100A MOSFET 20V 120A 5025W
Contextual Info: STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using

MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Abstract: SOP8 mos n Mos MARKING CODE 24V 1A mosfet 25NC12 STC4539 N and P MOSFET
Contextual Info: STC4539 N&P Pair Enhancement Mode MOSFET 6.8A / -6.2A DESCRIPTION The STC4539 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

STC4614

Abstract: P channel MOSFET 10A MOSFET 10A AIDM-25 stc46 N and P MOSFET
Contextual Info: 614 STC4 STC4614 N&P Pair Enhancement Mode MOSFET 10A / -10A DESCRIPTION The STC4614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

STC4606

Contextual Info: STC4606 N&P Pair Enhancement Mode MOSFET 6.5A / -6.9A DESCRIPTION The STC4606 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

marking sop-8

Abstract: STN4920 MOSFET dual SOP-8 Dual N-Channel MOSFET SOP8 channel mosfet sop_8 Stanson Technology diode 72A marking 30 dual mosfet 10 35 SOP DIODE
Contextual Info: STN4920 Dual N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4920 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology. It is suitable for the power management applications in the portable or battery powered

Contextual Info: STN4186D N Channel Enhancement Mode MOSFET 35.0A DESCRIPTION STN4186D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using

Contextual Info: STN454D N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION STN454D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN454D has been designed specially to improve the overall efficiency of DC/DC converters using

Contextual Info: ST75N75 N Channel Enhancement Mode MOSFET 75.0A DESCRIPTION ST75N75 is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION TO220-3L FEATURE 75V/40.0A, RDS(ON) = 8mΩ (Typ.)

Contextual Info: STN410D N Channel Enhancement Mode MOSFET 15.0A DESCRIPTION STN410D is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STN410D has been designed specially to improve the overall efficiency of DC/DC converters using

Contextual Info: STP413D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP413D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using either

STN*4440

Abstract: STN4440
Contextual Info: STN4440 N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

ST16N10

Abstract: 16N10 n channel enhancement MOSFET n channel Stanson Technology MOSFET MARKING ST st 16n10 DSA001077 mosfet low idss TO-251 Package
Contextual Info: ST 16N10 ST16N10 N Channel Enhancement Mode MOSFET 16.0A DESCRIPTION ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using

MOSFET 30v sop-8

Abstract: STN4412 diode 68A transistor 8P Package Marking 8A STN44
Contextual Info: STN4412 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

P channel MOSFET 10A

Abstract: STP4435A MOSFET 10A
Contextual Info: STP4435A P Channel Enhancement Mode MOSFET -10A DESCRIPTION STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Stanson Technology

Abstract: TH 9437 P channel MOSFET 1A MOSFET 30v sop-8
Contextual Info: P943 7 ST STP 9437 P Channel Enhancement Mode MOSFET - 5.7A DESCRIPTION STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

STC6614

Contextual Info: STC6614 N&P Pair Enhancement Mode MOSFET 7.0A / -5.0A DESCRIPTION The STC6614 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance

STP4803

Abstract: STP48 MOSFET 30v sop-8 marking 52A MOSFET dual SOP-8
Contextual Info: STP4803 Dual P Channel Enhancement Mode MOSFET -5.2A DESCRIPTION STP4803 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

STN442D

Abstract: STN442 370A Stanson Technology STN44 VIEW 48v mosfet switch bentley
Contextual Info: STN4 42 D STN442 42D N Channel Enhancement Mode MOSFET 37.0A DESCRIPTION STN442D is used trench technology to provide excellent RDS on and gate charge. Those devices are suitable for use as load switch or in PWM applications. PIN CONFIGURATION (D-PAK) FEATURE

Contextual Info: ST47P06D P Channel Enhancement Mode MOSFET -47.0A DESCRIPTION ST47P06D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

STP4189D

Contextual Info: STP4189D P Channel Enhancement Mode MOSFET -12.0A DESCRIPTION STP4189D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP413D has been designed specially to improve the overall efficiency of DC/DC converters using

SOT 363 NP

Abstract: stc633 STC6332 SC-70-6L 1a sop 6332 N and P MOSFET
Contextual Info: 6332 STC STC6332 N&P Pair Enhancement Mode MOSFET 0.95A / -1A DESCRIPTION The STC6332 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching