ST93CXX Search Results

Contextual Info: / r : SGS-THOM SON * 7 # , H 0M ILI« M 0(g§ ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 16 x 16 or 32 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

Contextual Info: Æ Ä T T# S G S -T H O M S O N ST93C06 H D [^ @ [1 [L [I© ¥ ^ ® R Ì]D © Ì SERIAL ACCESS CMOS 256 bit 16 x 16 or 32 x 8 EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION « DUAL ORGANISATION: 16 x 16 or 32 x 8

ram 2015

Abstract: M93C56 M27256 M2764A M27C64A QRR9804 M29F105 Part Marking STMicroelectronics flash memory M87C257 m29f002
Contextual Info: QRR9804 QUALITY & RELIABILITY REPORT January 1998 to December 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

ST93C06C

Abstract: M93C06 ST93C06
Contextual Info: ST93C06 ST93C06C 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

ST93C06

Abstract: ST93C06C AI00816B
Contextual Info: ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit 16 x 16 or 32 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

Contextual Info: ST93C06 ST93C06C SGS-THOMSON llDMJilLIlMWDÊi 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN CO • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION > DUAL ORGANIZATION: 1 6 x 1 6 or 3 2 x 8 ■ BYTE/WORD and ENTIRE MEMORY

Contextual Info: / = T S C S-TH O M SO N ^ 7 # . H0»iLi «K!10 g§ ST93C06 -. ST93C06C SERIAL ACCESS MICROWIRE BUS 256 bit (16 x 16 or 32 x 8 EEPROM DESCRIPTION The ST93C06 and ST93C06C are 256 bit Electri­ cally Erasable Programmable Memory (EEPROM) fabricated with SGS-THOMSON’s High Endurance

331 S

Abstract: ST93C46 ST93C06 ST93C06C
Contextual Info: ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit 16 x 16 or 32 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

Contextual Info: SGS-1H0MS0N |]»iQJ §»«S ST93C06 SERIAL ACCESS CMOS 256 bit (16 x 16 or 32 x 8 EEPROM • MINIMUM 1,000,000 ERASE/WRITE CYCLES, WITH OVER 10 YEARS DATA RETENTION ■ DUAL ORGANISATION: 16 x 16 or 32 x 8 ■ BYTE/WORD AND CHIP PROGRAMMING IN­ STRUCTIONS

ST93C06

Abstract: ST93C06C
Contextual Info: SCS-THOMSON M g[l»i(gTMô m t. ST93C06 ST93C06C • 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 16 x 16 or 32 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS ■ SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE

Contextual Info: /T T SGS-THOMSON ^7#. HDlg^OllLIgTOOIfSlDgi ST93C06 ST93C06C • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 1 6 x 1 6 or 3 2 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS > SELF-TIMED PROGRAMMING CYCLE with

circuit diagram of car central lock system

Abstract: Car security system block diagram circuit alarm car car alarm 1500w mosfet audio amplifier circuit diagram car central lock Car Central lock system 1500w audio amplifier circuit diagram CAR alarm INTEGRATED CIRCUIT car power window
Contextual Info: AUTOMOTIVE STMicroelectronics SOLUTIONS CAR ALARM SECURITY SYSTEMS KEYLESS TRANSMITTER Car Alarm Block Diagram + LED RF Keyless Transmitter IR + Alarm Central 20 mA Output Siren Encoder Actuators Adc Input Open/Close RF/IR Transceiver Panic EEprom Sensors

ST93C06

Abstract: ST93C06C
Contextual Info: ST93C06 ST93C06C SERIAL ACCESS MICROWIRE BUS 256 bit 16 x 16 or 32 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 10 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

AI00816B

Contextual Info: ST93C06 ST93C06C 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

24w04

Abstract: 24w08 24w04 program 24c04 program eeprom 24c04 6 24W04 6 ST93C46 24C08 code example ic st24c02 24C08 6 IC 24c08 contain
Contextual Info: ST24/25C02, ST24C02R ST24/25W02 SERIAL 2K 256 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 3V to 5.5V for ST24x02 versions – 2.5V to 5.5V for ST25x02 versions – 1.8V to 5.5V for ST24C02R version only

QRR0001

Abstract: ST16 m29f002 065um ST M27C256B PART MARKING FM27c1024 QRR000
Contextual Info: QRR0001 QUALITY & RELIABILITY REPORT April 1999 March 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

M96S66

Abstract: tsop 3846 ST M27C256B PART MARKING M27128 M2764A QRR9903
Contextual Info: QRR9903 QUALITY & RELIABILITY REPORT October 1998 September 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

M27128

Abstract: M2764A QRR9902
Contextual Info: QRR9902 QUALITY & RELIABILITY REPORT July 1998 to June 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

25X25

Abstract: Marking STMicroelectronics m27c256 QRR9904 ST16 M27C256 M27C320
Contextual Info: QRR9904 QUALITY & RELIABILITY REPORT January 1999 December 1999 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

M25C

Abstract: Marking STMicroelectronics m27c256 QRR0001 QRR0002 ST16 M29W160 M275 M27C512 marking QRR000 ST M27C256B PART MARKING
Contextual Info: QRR0002 QUALITY & RELIABILITY REPORT July 1999 June 2000 EPROM, Flash Memory, EEPROM, NVRAM and SMARTCARD Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and

ST93C06

Abstract: ST93C06C
Contextual Info: / ^ 7 S C S -TH O M S O N Ä 7#. ST93C06 ST93C06C [Mfl @^ I[LIgTlS(S R!lD(gS SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 16 x 16 o r 3 2 x 8 ■ BYTE/WORD and ENTIRE MEMORY

BV-1

Abstract: M93C56 M27256 M2764A QRR9901 Solutions-76 Marking STMicroelectronics m27c256
Contextual Info: QRR9901 QUALITY & RELIABILITY REPORT April 1998 to March 1999 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and