C 1114 transistor
Abstract: No abstract text available
Text: FiS REFLECTIVE OBJECT SENSORS OPTOELECTRONICS QRB1113/1114 PACKAGE DIMENSIONS .4 2 0 1 0 .6 7 -J -4 - DESCRIPTIO N Th e QRB1113/1114 consists of an infrared emitting diode -.3 2 8 (8 .3 3 ) a and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.
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QRB1113/1114
QRB1113/1114
000b33b
C 1114 transistor
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QRB1113
Abstract: LTA 703 S
Text: REFLECTIVE OBJECT SENSORS OP T O E L E C T H 0 N l t S QRB1113/1114 PACKAGE DIMENSIONS DESCRIPTION The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing.
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QRB1113/1114
QRB1113/1114
QRB1113
LTA 703 S
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QRB1113
Abstract: QRB1114
Text: [*Q REFLECTIVE OBJECT SENSOR! QPTOELECTRQHICS QRB1113/11K DESCRIPTION PACKAGE DIMENSIONS The Q RB1113/1114 consists of an infrared em itting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.
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QRB1113/11K
QRB1113
QRB1114
ST2179
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transistor bI 240
Abstract: QRB1113 qrb1114 D transistor sEC transistor 373
Text: E9 REFLECTIVE OBJECT SENSORS Mw— OPTOELECTRONICS QRB1113/1114 DESCRIPTION PACKAGE DIMENSIONS The Q RB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor m ounted side by side on a converging optical axis in a black plastic housing.
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OCR Scan
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QRB1113/1114
QRB1113/1114
ST2179nt
QRB1113
QRB1114
transistor bI 240
D transistor sEC
transistor 373
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