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    ST MICROELECTRONICS BIPOLAR TRANSISTOR Search Results

    ST MICROELECTRONICS BIPOLAR TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    ST MICROELECTRONICS BIPOLAR TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor PDF

    L4960 NOTE

    Abstract: transistor L7805 ic l7805 l7805 linear 2X1N4001 L4960 L6217 l7805 L4940 L4941
    Text: APPLICATION NOTE VERY LOW DROP REGULATORS ENHANCE SUPPLY PERFORMANCE By Paolo ANTONIAZZI an d Arturo W OL FSGRUBER Standard three-terminal voltage regulator ICs use an NPN transistor as the series pass element,so the input-output voltage drop is 1.5V-2V. Low dropout


    Original     		PDF

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563 PDF

    st microelectronics smd zener

    Abstract: OPA71 STKM2000 industrial rpm sensor capacitive circuit schematic st microelectronics smd diode DEVICE SILICON TWIN TRANSISTOR zener diode from st microelectronics Schottky diode Die flip chip schottky transistor spice
    Text: STKM2000 SERIES  2 µ/2 POLY/2 METAL BiCMOS MIXED ANALOG-DIGITAL STANDARD CELLS • ■ ■ ■ ■ ■ ■ ■ ADVANCED BICMOS 2 µ/2 POLY/ 2 METAL PROCESS TWIN TUB PROCESS HIGH LATCH-UP IMMUNITY POWER SUPPLY : MAXIMUM RATING : -0.5V TO 12V OPERATING CONDITIONS : 3V TO 10V


    Original     		STKM2000 st microelectronics smd zener OPA71 industrial rpm sensor capacitive circuit schematic st microelectronics smd diode DEVICE SILICON TWIN TRANSISTOR zener diode from st microelectronics Schottky diode Die flip chip schottky transistor spice PDF

    transistor AE code PNP smd

    Abstract: OPA71 cmos opamp OPA41 5 STKM2000 smd transistor code SG
    Text: STKM2000 SERIES 2 µ/2 POLY/2 METAL BiCMOS MIXED ANALOG-DIGITAL STANDARD CELLS • ■ ■ ■ ■ ■ ■ ■ ADVANCED BICMOS 2 µ/2 POLY/ 2 METAL PROCESS TWIN TUB PROCESS HIGH LATCH-UP IMMUNITY POWER SUPPLY : MAXIMUM RATING : -0.5V TO 12V OPERATING CONDITIONS : 3V TO 10V


    Original     		STKM2000 transistor AE code PNP smd OPA71 cmos opamp OPA41 5 smd transistor code SG PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON 5 •y Ï . A M 8 1 7 1 9 -0 4 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A ■ ■ » ■ ■ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE


    OCR Scan     		AM81719-040 PDF

    747s

    Abstract: ic 7475 AM1416-200
    Text: SG S-T H O M SO N Æj7 SfflDg[B ô lllLÊCT[B 8!10(gi A M 14 1 6 -2 0 0 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY


    OCR Scan     		AM1416-200 AM1416-200 747s ic 7475 PDF

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 PDF

    BUV298V

    Abstract: No abstract text available
    Text: BUV298V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS:


    Original     		BUV298V BUV298V PDF

    BUT30V

    Abstract: BUT30
    Text: BUT30V NPN TRANSISTOR POWER MODULE • ■ ■ ■ ■ ■ ■ NPN TRANSISTOR HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE APPLICATIONS:


    Original     		BUT30V BUT30V BUT30 PDF

    EIA-625

    Abstract: ecl 10K signetics LUCENT InGaAs 1345FMPC GR-253-CORE TR-NWT-000468 pin optical fiber lucent DS99-073LWP
    Text: Data Sheet January 2000 1345-Type Receiver with Clock Recovery and Data Retiming Applications • Telecommunications — Inter- and intraoffice SONET/ITU-T SDH — Subscriber loop — Metropolitan area networks ■ High-speed data communications Description


    Original     		1345-Type 20-pin, 20-pin GR-253-CORE) DS00-099OPTO DS99-071LWP) EIA-625 ecl 10K signetics LUCENT InGaAs 1345FMPC GR-253-CORE TR-NWT-000468 pin optical fiber lucent DS99-073LWP PDF

    Bipolar Junction Transistor

    Abstract: AUK Semiconductor ic 805 transistor k 265 transistor 305
    Text: New Product Announcement April 2002 Introducing 1Amp Bipolar Junction Transistor in SOT-23 Surface Mount Package: MMBT123S A SOT-23 Dim Min Max A 0.37 0.51 B 1.19 1.40 C 2.10 2.50 G D 0.89 1.05 H E 0.45 0.61 G 1.78 2.05 H 2.65 3.05 J 0.013 0.15 K 0.89 1.10


    Original     		OT-23 MMBT123S OT-23 STD123S BC818 BCW65 BCW65C BC818, MMBT123S Bipolar Junction Transistor AUK Semiconductor ic 805 transistor k 265 transistor 305 PDF

    st microelectronics ignition

    Abstract: ST901T ignition coil npn power darlington
    Text: ST901T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON • ■ ■ ■ HIGH VOLTAGE SPECIAL DARLINGTON STRUCTURE VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE HIGH DC CURRENT GAIN APPLICATION ■ HIGH RUGGEDNESS ELECTRONIC IGNITION FOR SMALL ENGINES


    Original     		ST901T ST901T O-220 O-220 st microelectronics ignition ignition coil npn power darlington PDF

    triac gate drive circuit

    Abstract: IGBT light DIMMER igbt dimmer IGBT/MOSFET Gate Drive driving mosfet/igbt with pulse transformer driver "reverse phase control" igbt dimmer TRIAC dimmer control an5183 reverse phase control igbt dimmer ZENER DIODE t2
    Text: APPLICATION NOTE DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs by B. Maurice, L. Wuidart 1. INTRODUCTION Unlike the bipolar transistor, which is current driven, Power MOSFETs, with their insulated gates, are voltage driven. A basic knowledge of the principles


    Original     		PDF

    BU4508DX equivalent

    Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
    Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210


    Original     		BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent PDF

    Toshiba thyristors

    Abstract: bosch motorola 002X5 Flash 1987 delco radio Delco
    Text: SGS-THOMSON Microelectronics  pre98whi - 1 - March 17 MISSION To offer strategic independence to our partners worldwide, as a profitable and viable broad range semiconductor supplier.  pre98whi - 2 - March 17 SGS-THOMSON : A GLOBAL SEMICONDUCTOR COMPANY


    Original     		pre98whi Toshiba thyristors bosch motorola 002X5 Flash 1987 delco radio Delco PDF

    IBM ASIC Products

    Abstract: nokia 2110 Dataquest
    Text: SGS-THOMSON Microelectronics  pre98whi - 1 - March 17 MISSION To offer strategic independence to our partners worldwide, as a profitable and viable broad range semiconductor supplier. pre98whi - 2 - March 17  SGS-THOMSON : A GLOBAL SEMICONDUCTOR COMPANY


    Original     		pre98whi IBM ASIC Products nokia 2110 Dataquest PDF

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586 PDF

    ESM4045DV

    Abstract: 0322AG
    Text: ESM4045DV NPN DARLINGTON POWER MODULE • ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE 2500V RMS EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE


    Original     		ESM4045DV ESM4045DV 0322AG PDF

    m48t35

    Abstract: AN1009 M40Z111 M40Z300 M48Z02 M48Z08 M48Z12 M48Z18 M48Z58
    Text: AN1009 APPLICATION NOTE “Negative Undershoot” NVRAM Data Corruption Miniaturisation in microelectronics has led, inevitably, to the inadvertent appearance of parasitic devices. Adjacent conducting paths end up being separated by a gap that is so narrow that it ceases to isolate them


    Original     		AN1009 m48t35 AN1009 M40Z111 M40Z300 M48Z02 M48Z08 M48Z12 M48Z18 M48Z58 PDF

    mc34002

    Abstract: No abstract text available
    Text: /T T MC33002/A/B MC34002/A/B MC35002/A/B S G S -T H O M S O N R Æ D ^ iL [l g ïï^ (o [M D © i GENERAL PURPOSE DUAL JFET OPERATIONAL AMPLIFIERS • LOW POWER CONSUMPTION • WIDE COMMON-MODE (UP TO Vcc+) AND DIFFERENTIAL VOLTAGE RANGE . LOW INPUT BIAS AND OFFSET CURREm. OUTPUT SHORT-CIRCUIT PROTECTION


    OCR Scan     		MC33002/A/B MC34002/A/B MC35002/A/B mc34002 PDF

    ic 91215

    Abstract: TEA5101B tea5101 MULTIWATT15
    Text: rz 7 * 7/ SG S-T H O M SO N MlOtgMilUlCTlSMOigg TEA 5101B RGB HIGH VOLTAGE VIDEO AMPLIFIER PRELIM INARY DATA > BANDWIDTH : 10MHz TYPIC A L • R IS E AND FALL TIM E : 50ns TYPIC A L ■ C R T CATHODES CURREN T O UTPUTS FOR PARALLEL OR SEQ U EN TIAL CUT-OFF OR


    OCR Scan     		TEA5101B 10MHz TEA5101B MULTIWATT15 0075b75 ic 91215 tea5101 MULTIWATT15 PDF

    Untitled

    Abstract: No abstract text available
    Text: L9821 HIGH SIDE DRIVER . . . . ADVANCE DAT A 25A PEAK OUTPUT CURRENT RON = 100mΩ DIAGNOSTIC AND PROTECTION FUNCTIONS µP COMPATIBLE GROUNDED CASE INRUSH CURRENT LIMITING CIRCUIT DESCRIPTION The L9821 High Side Driver realized with Multipower - BCD mixed technology, drives resistive or inductive loads with one side connected to ground.


    Original     		L9821 L9821 PDF

    L9821

    Abstract: charge pump relay drive circuit
    Text: L9821 HIGH SIDE DRIVER . . . . ADVANCE DAT A 25A PEAK OUTPUT CURRENT RON = 100mΩ DIAGNOSTIC AND PROTECTION FUNCTIONS µP COMPATIBLE GROUNDED CASE INRUSH CURRENT LIMITING CIRCUIT DESCRIPTION The L9821 High Side Driver realized with Multipower - BCD mixed technology, drives resistive or inductive loads with one side connected to ground.


    Original     		L9821 L9821 charge pump relay drive circuit PDF