IRF540N
Abstract: IRFP140N
Text: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier
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91343B
IRFP140N
O-247
IRF540N
IRFP140N
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IRF540N
Abstract: mosfet irf540n
Text: PD - 91341A IRF540N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier
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1341A
IRF540N
O-220
IRF1010
IRF540N
mosfet irf540n
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91341B
Abstract: irf540n 4.5v to 100v input regulator
Text: PD - 91341B IRF540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International
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91341B
IRF540N
O-220
O-220AB
91341B
irf540n
4.5v to 100v input regulator
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IRF540N
Abstract: 91341B 16ans 4.5V TO 100V INPUT REGULATOR
Text: PD - 91341B IRF540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International
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91341B
IRF540N
O-220
IRF540N
91341B
16ans
4.5V TO 100V INPUT REGULATOR
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Untitled
Abstract: No abstract text available
Text: PD - 91341B IRF540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 44mΩ G ID = 33A S Description Advanced HEXFET® Power MOSFETs from International
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91341B
IRF540N
O-220
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IRF540NS
Abstract: IRF540NL 3F smd transistor MOSFET IRF540n AN-994 IRF540N 4.5v to 100v input regulator
Text: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing
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91342B
IRF540NS
IRF540NL
EIA-418.
IRF540NS
IRF540NL
3F smd transistor
MOSFET IRF540n
AN-994
IRF540N
4.5v to 100v input regulator
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IRL530N
Abstract: NIRF1010 T1 IRL530N diode avalanche dsa 0,9 14 A
Text: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier
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91348C
IRL530N
O-220
NIRF1010
EEK19
O-220AB
IRL530N
NIRF1010
T1 IRL530N
diode avalanche dsa 0,9 14 A
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Untitled
Abstract: No abstract text available
Text: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier
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91348C
IRL530N
O-220
NIRF1010
EEK19
O-220AB
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T1 IRL530N
Abstract: IRL530N NIRF1010
Text: PD - 91348C IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier
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91348C
IRL530N
O-220
NIRF1010
EEK19
O-220AB
T1 IRL530N
IRL530N
NIRF1010
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Untitled
Abstract: No abstract text available
Text: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing
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91342B
IRF540NS
IRF540NL
EIA-418.
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ak 957 1542 d
Abstract: AN-994 IRL530N IRL530NL IRL530NS
Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11
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91349C
IRL530NS/L
IRL530NS)
IRL530NL)
die22
EIA-418.
ak 957 1542 d
AN-994
IRL530N
IRL530NL
IRL530NS
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Untitled
Abstract: No abstract text available
Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description D l VDSS =100V RDS(on) = 0.10Ω G11
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91349C
IRL530NS/L
IRL530NS)
IRL530NL)
EIA-418.
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ak 957 1542 d
Abstract: AN-994 IRL530N IRL530NL IRL530NS IRL530NSL
Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11
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91349C
IRL530NS/L
IRL530NS)
IRL530NL)
EIA-418.
ak 957 1542 d
AN-994
IRL530N
IRL530NL
IRL530NS
IRL530NSL
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IRF540NL
Abstract: IRF540NS 3F smd transistor AN-994 IRF540N MOSFET IRF540n
Text: PD - 91342B Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing
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91342B
IRF540NS
IRF540NL
EIA-418.
IRF540NL
IRF540NS
3F smd transistor
AN-994
IRF540N
MOSFET IRF540n
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IRF540N
Abstract: MOSFET IRF540n ISD 1400 d
Text: PD - 91341A IRF540N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier
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1341A
IRF540N
O-220
IRF540N
MOSFET IRF540n
ISD 1400 d
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IRL530N
Abstract: No abstract text available
Text: PD - 91348B IRL530N l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET Power MOSFET D VDSS = 100V RDS on = 0.10Ω G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier
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91348B
IRL530N
O-220
IRL530N
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IRFP140N
Abstract: ISD 1400 d TO-247AC Package IRF540N 4.5v to 100v input regulator
Text: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier
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91343B
IRFP140N
O-247
IRFP140N
ISD 1400 d
TO-247AC Package
IRF540N
4.5v to 100v input regulator
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btc 202 b
Abstract: No abstract text available
Text: PS Series Shielded SMD Power Inductors Features • Low profile • Magnetic shielded • SMT type, suitable for reflow soldering. Application： • Portable communication equipment • Notebook Computer • DC/DC converters etc. Part Number System PS 5020
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IRF540NS D2PAK
Abstract: IRF540NL IRF540NS 3F smd transistor AN-994 IRF540N
Text: PD - 91342 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRF540NS IRF540NL l HEXFET® Power MOSFET l D VDSS = 100V RDS on = 44mΩ G Advanced HEXFET Power MOSFETs from
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IRF540NS
IRF540NL
IRF540NS D2PAK
IRF540NL
IRF540NS
3F smd transistor
AN-994
IRF540N
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Untitled
Abstract: No abstract text available
Text: PD-91348B International I ö r Rectifier • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated IRL530N HEXFET Power MOSFET VDSS = 100V R ü S o n =
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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Untitled
Abstract: No abstract text available
Text: PD-91340A International IÖR Rectifier IRF520NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF520NS • Low-profile through-hole (IRF520NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V
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IRF520NS)
IRF520NL)
PD-91340A
IRF520NS/L
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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IRF540NS
Abstract: IRF540NL
Text: PD-91342A International Rectifier IÖR IRF540NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF540NS • Low-profile through-hole (IRF540NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V
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IRF540NS)
IRF540NL)
PD-91342A
IRF540NS/L
IRF540NS
IRF540NL
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