CJSE071
Abstract: No abstract text available
Text: w ^ m c ra n +5 VOLT REGULATOR TYPE NO. CJSE071 2% Si Ge 0° C to +70°C General c u st. dwg p r o d u c t s p e c if ic a t io n Purpose - DEVICE MARKING 1 ,w C0SE071 lcl DATE CODE I SYMBOL | 1 2) 3) GROUP A AND /OR SUB PERFORMANCE CHARACTERISTICS * I MIN.
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CJSE071
CJSE07T
fs120Hz,
CJSE071
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Untitled
Abstract: No abstract text available
Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics
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2N5153HR
O-257
2N5153HR
O-257
DocID15386
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marking code RAD SMD Transistor npn
Abstract: JS55
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5551HR
2N5551HR
MIL-PRF19500
DocID16935
marking code RAD SMD Transistor npn
JS55
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RAD SMD MARKING CODE
Abstract: 2N5551RUB
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate UB Description
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2N5551HR
2N5551HR
MIL-PRF19500
DocID16935
RAD SMD MARKING CODE
2N5551RUB
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Untitled
Abstract: No abstract text available
Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics
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2N5153HR
O-257
2N5153HR
O-257
DocID15386
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soc2907
Abstract: 2N2907AUB
Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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2N2907AHR
2N2907AHR
MIL-PRF19500
DocID15382
soc2907
2N2907AUB
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SOC2222AHR
Abstract: No abstract text available
Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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2N2222AHR
2N2222AHR
MIL-PRF19500
DocID16558
SOC2222AHR
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2N2907AUB
Abstract: No abstract text available
Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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2N2907AHR
2N2907AHR
MIL-PRF19500
DocID15382
2N2907AUB
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J2N2222
Abstract: soc2222
Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 TO-18 3 IC max 0.8 A hFE at 10 V - 150 mA 100 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid.
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2N2222AHR
2N2222AHR
MIL-PRF19500
DocID16558
J2N2222
soc2222
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Untitled
Abstract: No abstract text available
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5401HR
2N5401HR
MIL-PRF19500
DocID16934
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520100204
Abstract: No abstract text available
Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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2N2222AHR
2N2222AHR
MIL-PRF19500
DocID16558
520100204
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PDF
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520100204
Abstract: No abstract text available
Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 TO-18 3 IC max 0.8 A hFE at 10 V - 150 mA 100 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid.
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2N2222AHR
2N2222AHR
MIL-PRF19500
DocID16558
520100204
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5201/002/05R
Abstract: No abstract text available
Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB • Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram
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2N3700HR
2N3700HR
MILPRF19500)
DocID15354
5201/002/05R
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520200107R
Abstract: 2N2907A1 2N2907AUB
Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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2N2907AHR
2N2907AHR
MIL-PRF19500
DocID15382
520200107R
2N2907A1
2N2907AUB
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JANSR2N3700UB
Abstract: ESCC
Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB • Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram
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2N3700HR
2N3700HR
MILPRF19500)
DocID15354
JANSR2N3700UB
ESCC
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages
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2N3700HR
2N3700HR
MILPRF19500)
DocID15354
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages
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2N3700HR
2N3700HR
MILPRF19500)
DocID15354
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PDF
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2N2907AUB
Abstract: No abstract text available
Text: 2N2907AHR Hi-Rel 60 V - 0.6 A PNP transistor Datasheet — production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified
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2N2907AHR
2N2907AHR
MIL-PRF19500
2N2907AUB
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J2N2907A
Abstract: JS2907 SOC2907A JANS2N2907AUBT 2N2907AUB07 520200104 jans2n2907aub ST TO-18 marking code SOC-2907A soc2907ahrb
Text: 2N2907AHR Hi-Rel 60 V - 0.6 A PNP transistor Datasheet — production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified
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2N2907AHR
2N2907AHR
MIL-PRF19500
J2N2907A
JS2907
SOC2907A
JANS2N2907AUBT
2N2907AUB07
520200104
jans2n2907aub
ST TO-18 marking code
SOC-2907A
soc2907ahrb
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Untitled
Abstract: No abstract text available
Text: -L For icke direkt t ole ran ssatta m itt Rev Change order Change: A = Added W = W as D = Deleted C = Changed Date Sign galler toleransk a ss L A S E R M A R K N IN G / L A S E R MARKING: General tolerant es if not oth e rwise stated TEXTFONT: G EN -ISO I
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n01-6494
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st smd IC marking code
Abstract: 2N5154ESYHRT
Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics
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2N5154HR
O-257
2N5154HR
O-257
DocID15387
st smd IC marking code
2N5154ESYHRT
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PDF
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sps gf20
Abstract: gf20 connector EWCAP-15 GF20
Text: TABLE OF CONTENTS SHEET NO. SHEET DESCRIPTION 1 NOTES 2 KEY CONFIGURATIONS 3 BLADE SEALED ASSEMBLY i SYSTEM PACKAGING 5 BOM n u . a ITTI D © Í7TI ITO I BLADE S E A LE D ASSEM BLY OPTIONAL LASER MARKING THIS SURFACE SEE NOTE 3g. & ^ HD a 5 S 1 > KD Ò
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JANSR2N5401UB
Abstract: 2N5401UB06 J2N5401UB1
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5401HR
2N5401HR
MIL-PRF19500
DocID16934
JANSR2N5401UB
2N5401UB06
J2N5401UB1
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Untitled
Abstract: No abstract text available
Text: NOTES: 1. MATERIAL NUMBER, BATCH CODE, UL CSA MARKING TO BE PRINTED ON THE CONNECTOR AS PER E -3 6 5 0 2 -0 0 5 2. PRODUCT SPECIFICATION PS:85013-001 3. PACKING SPECIFICATION PK: 36512-001 4. CUT FACES OF TIP WITHOUT PLATING IS PERMITTED 5. REFERENCE AREA OF PLATING
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