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    ST IC DATE CODE MARKING Search Results

    ST IC DATE CODE MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    ST IC DATE CODE MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics


    Original     		PDF 2N5153HR O-257 2N5153HR O-257 DocID15386

    marking code RAD SMD Transistor npn

    Abstract: JS55
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate


    Original     		PDF 2N5551HR 2N5551HR MIL-PRF19500 DocID16935 marking code RAD SMD Transistor npn JS55

    RAD SMD MARKING CODE

    Abstract: 2N5551RUB
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 • Hermetic packages • ESCC and JANS qualified • Up to 100 krad(Si) low dose rate UB Description


    Original     		PDF 2N5551HR 2N5551HR MIL-PRF19500 DocID16935 RAD SMD MARKING CODE 2N5551RUB

    Untitled

    Abstract: No abstract text available
    Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics


    Original     		PDF 2N5153HR O-257 2N5153HR O-257 DocID15386

    soc2907

    Abstract: 2N2907AUB
    Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.


    Original     		PDF 2N2907AHR 2N2907AHR MIL-PRF19500 DocID15382 soc2907 2N2907AUB

    SOC2222AHR

    Abstract: No abstract text available
    Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.


    Original     		PDF 2N2222AHR 2N2222AHR MIL-PRF19500 DocID16558 SOC2222AHR

    2N2907AUB

    Abstract: No abstract text available
    Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB  ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.


    Original     		PDF 2N2907AHR 2N2907AHR MIL-PRF19500 DocID15382 2N2907AUB

    J2N2222

    Abstract: soc2222
    Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 TO-18 3 IC max 0.8 A hFE at 10 V - 150 mA 100 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid.


    Original     		PDF 2N2222AHR 2N2222AHR MIL-PRF19500 DocID16558 J2N2222 soc2222

    Untitled

    Abstract: No abstract text available
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate


    Original     		PDF 2N5401HR 2N5401HR MIL-PRF19500 DocID16934

    520100204

    Abstract: No abstract text available
    Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.


    Original     		PDF 2N2222AHR 2N2222AHR MIL-PRF19500 DocID16558 520100204

    520100204

    Abstract: No abstract text available
    Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 TO-18 3 IC max 0.8 A hFE at 10 V - 150 mA 100 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in LCC-3UB is connected to the metallic lid.


    Original     		PDF 2N2222AHR 2N2222AHR MIL-PRF19500 DocID16558 520100204

    5201/002/05R

    Abstract: No abstract text available
    Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features 1 BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB • Hermetic packages Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram


    Original     		PDF 2N3700HR 2N3700HR MILPRF19500) DocID15354 5201/002/05R

    520200107R

    Abstract: 2N2907A1 2N2907AUB
    Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.


    Original     		PDF 2N2907AHR 2N2907AHR MIL-PRF19500 DocID15382 520200107R 2N2907A1 2N2907AUB

    Untitled

    Abstract: No abstract text available
    Text: 2N2907AHR Hi-Rel 60 V, 0.6 A PNP transistor Datasheet - production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 LCC-3 • Hermetic packages UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.


    Original     		PDF 2N2907AHR 2N2907AHR MIL-PRF19500 DocID15382

    Untitled

    Abstract: No abstract text available
    Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages


    Original     		PDF 2N3700HR 2N3700HR MILPRF19500) DocID15354

    Untitled

    Abstract: No abstract text available
    Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages


    Original     		PDF 2N3700HR 2N3700HR MILPRF19500) DocID15354

    2N2907AUB

    Abstract: No abstract text available
    Text: 2N2907AHR Hi-Rel 60 V - 0.6 A PNP transistor Datasheet — production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified


    Original     		PDF 2N2907AHR 2N2907AHR MIL-PRF19500 2N2907AUB

    J2N2907A

    Abstract: JS2907 SOC2907A JANS2N2907AUBT 2N2907AUB07 520200104 jans2n2907aub ST TO-18 marking code SOC-2907A soc2907ahrb
    Text: 2N2907AHR Hi-Rel 60 V - 0.6 A PNP transistor Datasheet — production data Features Parameter Value BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 1 2 3 TO-18 3 3 4 1 1 2 2 • Linear gain characteristics ■ Hermetic packages ■ ESCC and JANS qualified


    Original     		PDF 2N2907AHR 2N2907AHR MIL-PRF19500 J2N2907A JS2907 SOC2907A JANS2N2907AUBT 2N2907AUB07 520200104 jans2n2907aub ST TO-18 marking code SOC-2907A soc2907ahrb

    st smd IC marking code

    Abstract: 2N5154ESYHRT
    Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics


    Original     		PDF 2N5154HR O-257 2N5154HR O-257 DocID15387 st smd IC marking code 2N5154ESYHRT

    JANSR2N5401UB

    Abstract: 2N5401UB06 J2N5401UB1
    Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate


    Original     		PDF 2N5401HR 2N5401HR MIL-PRF19500 DocID16934 JANSR2N5401UB 2N5401UB06 J2N5401UB1

    CJSE071

    Abstract: No abstract text available
    Text: w ^ m c ra n +5 VOLT REGULATOR TYPE NO. CJSE071 2% Si Ge 0° C to +70°C General c u st. dwg p r o d u c t s p e c if ic a t io n Purpose - DEVICE MARKING 1 ,w C0SE071 lcl DATE CODE I SYMBOL | 1 2) 3) GROUP A AND /OR SUB PERFORMANCE CHARACTERISTICS * I MIN.


    OCR Scan     		PDF CJSE071 CJSE07T fs120Hz, CJSE071

    Untitled

    Abstract: No abstract text available
    Text: -L For icke direkt t ole ran ssatta m itt Rev Change order Change: A = Added W = W as D = Deleted C = Changed Date Sign galler toleransk a ss L A S E R M A R K N IN G / L A S E R MARKING: General tolerant es if not oth e rwise stated TEXTFONT: G EN -ISO I


    OCR Scan     		PDF n01-6494

    sps gf20

    Abstract: gf20 connector EWCAP-15 GF20
    Text: TABLE OF CONTENTS SHEET NO. SHEET DESCRIPTION 1 NOTES 2 KEY CONFIGURATIONS 3 BLADE SEALED ASSEMBLY i SYSTEM PACKAGING 5 BOM n u . a ITTI D © Í7TI ITO I BLADE S E A LE D ASSEM BLY OPTIONAL LASER MARKING THIS SURFACE SEE NOTE 3g. & ^ HD a 5 S 1 > KD Ò


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NOTES: 1. MATERIAL NUMBER, BATCH CODE, UL CSA MARKING TO BE PRINTED ON THE CONNECTOR AS PER E -3 6 5 0 2 -0 0 5 2. PRODUCT SPECIFICATION PS:85013-001 3. PACKING SPECIFICATION PK: 36512-001 4. CUT FACES OF TIP WITHOUT PLATING IS PERMITTED 5. REFERENCE AREA OF PLATING


    OCR Scan     		PDF