Untitled
Abstract: No abstract text available
Text: ri 2.29 .090 REF. ri C REF. - 3 hïhV hV hV hV ] 1 ( 0 . 20 ) .008 (2.54) .100 (0.43) .017 REF. (1.40) REF. .055 REF. - 'J (2.54) .100 SECTION D-D - RETENTION PIN DETAIL 2 CONTACTS LOCATED ON CENTER OF SAME ROW (SEE NOTE 6) TYP. (1.14) LK 3 4 5 6 7 8 9
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PINS93
U30843
ST0524XI
SDA-70524-
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ELDF
Abstract: 5636 TUBE subminiature tubes 15E tube TYPE 15E TUBES
Text: 5636 PREMIUM TUBE TIIHS'SOI PENTODE 383’ SUBMINIATURE TYPE —.017" COATED UN IPOTENTIAL CATHODE T -3 1.0 7 5 ” t.06 0 “ HEATER 6-3 VOLTS 0.15 AMP. AC OR DC L3 7 5 M AX ANY MOUNTING POSITION I BOTTOM VIEW SUBMINIATURE BUTTON g FLEXIBLE LEADS 1.5 " MIN.
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Untitled
Abstract: No abstract text available
Text: 2048 x 18 / 4096 x 18 S ynchrono us FIFOs FEATURES • May be Cascaded for Increased Depth, or Paralleled for Increased Width • Fast Cycle Times: 20/25/35 ns • 16 mA-IOL High-Drive Three-State Outputs • Pin-Compatible Drop-In Replacements for IDT72235B/45B FIFOs
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IDT72235B/45B
2048x
64TQFP
64-Pin
LH540235/45
68-Pin
PLCC68-P-S950)
LH540245U-20
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Untitled
Abstract: No abstract text available
Text: QS72215, QS72225 Q High-Speed. . .CMOS 512x 1 8, 1 K x 1 8 Parallel Clocked FIFO ne7, . 1c QS72215 QS72225 FEATURES • CMOS dual-port SRAM technology, 512 x 18 or 1024x 18 • Fast cycle times: 20/25/35 ns • Choice of standard or enhanced operating mode
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QS72215,
QS72225
QS72215
1024x
MDSF-00015
MDSF-00015-01
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Untitled
Abstract: No abstract text available
Text: QS72215, QS72225 Q High-Speed CMOS 512 X 1 8 ,1K X 18 Parallel Synchronous FIFO QS72215 QS72225 FEATURES • Fast Cycle Times 20/25/35 ns • Pin-Compatible Drop-In Replacements for IDT72215LB/25LB FIFO's • Choice of Standard or Enhanced Operating Mode • Device Comes Up into One of Two Known Default
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QS72215,
QS72225
QS72215
IDT72215LB/25LB
68-PIN,
MDSF-00015-01
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PDF
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QD13
Abstract: No abstract text available
Text: I N T E GR AT ED DEVICE. 4 Û ES 77 1 00137=17 SÛ2 • IDT böE D CMOS SyncFlFO 256 X 18, 512 X 18, 1024 x 18, 2048 18 and 409 6 x 18 FEATURES: • • • • • 256 x 18-bit org a n iz a tio n array 7 2205LB 512 x 18-bit org a n iz a tio n array (7 2 2 1 5LB)
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IDT72205LB
IDT72215LB
IDT72225LB
IDT72235LB
IDT72245LB
18-bit
2205LB
QD13
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Untitled
Abstract: No abstract text available
Text: SERIES 3188 Aluminum Electrolytic Capacitors Long-Life Com puter-Grade Aluminum Electrolytic Capacitors DESCRIPTION: Series 3 1 8 8 Long-Life Aluminum Electrolytic Capacitors are designed for those applications where a standard com puter-grade product must
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SIT8103AC-13-33E-24.00000T
Abstract: s659
Text: IDT 72103 IDT 72104 CMOS PARALLEL-SERIAL FIFO 2048 x 9-BIT & 4096 x 9-BIT FEATURES: DESCRIPTION: • 35ns parallel port acc e ss time The IDT72103/72104 are high-speed Parallel-Serial FIFO s thal are ideally suited for serial communications, high-denslty media
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50MHz
IDT72103/IDT72104
MIL-STD-883,
40MHz
33MHz
28MHz
25MHz
S6-82
SIT8103AC-13-33E-24.00000T
s659
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KLEM4
Abstract: No abstract text available
Text: »¼£¤µ !"# $!%&' *+,-./012 345!6789:;<=>? @ABCDEFGHI J! KLEM4'NOPQRSTUVWXYZ9:;[\]^_`a M4'bQRST'cd 4'S
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01G78EF
KLEM4
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ddgt
Abstract: No abstract text available
Text: PLESSEY SEMICONDUCTORS TS D É 7EEDS13 DDGt.714 3 7 2 2 0 5 1 3 PLESSEY SEMICONDUCTORS At PLESSE Y PRELIMINARY INFORMATION S em iconductors. 1K WORD X M V 61901 9-BIT FIRST-IN FIRST-OUT MEMORY The MV6T901 is a dual port RAM that utilises a special First-In, First-Out algorithm that loads and empties data on a
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7EEDS13
MV6T901
y6-35
MV61901
MV61901'
ddgt
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Untitled
Abstract: No abstract text available
Text: CMOS SERIAL-TO-PARALLEL FIFO 2048 x 9 4096 x 9 IDT72132 IDT72142 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • The IDT72132/72142 are high-speed, low-power serial-toparallel FIFOs. These FIFOs are ideally suited to serial communications applications, tape/disk controllers, and local
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IDT72132
IDT72142
IDT72132/72142
IDT72131/72141)
IDT72142s
MIL-STD-883,
50MHz
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MS009 16 terminal
Abstract: No abstract text available
Text: MS009 •040”CENTER PACKAGE 9.3.2.36 V i ! A2 a d V Q N V iS' \ .003 £ 7 .004 PLANE 1 NOTES: 1. REFER TO A P PLIC A B LE SY M B O L LIST. 2. D IM E N S IO N IN G AN D TO LER A N C IN G PER AN SI Y14.5 1973. 3. M ETALLIZED C O R N E R CA STELLA T IO N S
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MS009
050mm)
MS009 16 terminal
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PDF
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gcu 101 setting manual
Abstract: sp8k10 2TT24 6-71-M52N0-D03 sp8k10s PCI7412 cd 208 PIR ED89 RSS090 st DB3 C502
Text: Preface Notebook Computer M520N/M521N Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are
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M520N/M521N
10MIL
10MIL
STS-05-A
STS-05-A
gcu 101 setting manual
sp8k10
2TT24
6-71-M52N0-D03
sp8k10s
PCI7412
cd 208 PIR
ED89
RSS090
st DB3 C502
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PDF
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72284
Abstract: No abstract text available
Text: V A R IA B L E W ID T H S U P E R S Y N C FIF O 3 2 ,7 6 8 x 18 o r 6 5 ,5 3 6 x 9 6 5 ,5 3 6 x 18 o r 13 1 ,0 7 2 x 9 FEATURES: • Choose among the following memory organizations: IDT72284 32,768 x 18 or 65,536 x 9 IDT72294 65,536 x 18 or 131,072 x 9
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IDT72284
IDT72294
IDT72261/72271,
IDT72255/72265
IDT72264/72274
PN64-1)
PP64-1)
72284
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Untitled
Abstract: No abstract text available
Text: □RAWING N o ,:-M 7 5 8 0 /8 1 /8 2 /8 3 -X X S H E E T 2 OF 2 I F IN DOUBT - ASK NOT TO T H IR D A N G L E P R O J E C T IO N ALL D IM EN SIO N S 2.54- S E C T IO N A-A ORDER CODE: NOTES, 1, A L L T O L E R A N C E S ±0,20mm O N L E S S O T H E R W I S E STAT ED ,
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M75XX-X
M7580/81
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PDF
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Halbleiterbauelemente DDR
Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Text: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)
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R-1035
Halbleiterbauelemente DDR
transistor vergleichsliste
u82720
Datenblattsammlung
VEB mikroelektronik
aktive elektronische bauelemente ddr
mikroelektronik datenblattsammlung
je 3055 Motorola
mikroelektronik DDR
Transistor Vergleichsliste DDR
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode w nnm o u tlin e DF10L60 P a c k a g e : S T O -2 2 0 60 0V 10A D a le c o d v * ^ U n it'm m Weight 15g T yp 10.2 (£> Control No Feature • SMD • SMD • SBEE • High Voltage • trr=50ns • trr-5 0 n s ¿TV"*
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DF10L60
li501
J532-1)
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PDF
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Untitled
Abstract: No abstract text available
Text: FS98O24-DS-10_EN JAN 2010 Datasheet F P r R ro SC ef pe ’ er rti en es ce O nl y REV. 1.0 FS98O24 Fo 8-bit MCU with 4k program EPROM, 256-byte RAM, 2 low noise OPAMP, DMM function network,1 14-bit ADC, 4 x 20 LCD driver and RTC FS98O24 Fo F P r R ro SC
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FS98O24-DS-10
FS98O24
256-byte
14-bit
FS98O24
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PDF
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT CMOS SyncFlFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18 and 4,096 x 18 My ’ ’ Integrated D<ïvice Technology, Inc. FEATURES: • • • • • • • • • • • • • • • • • 256 x 18-bit organization array IDT72V205 512 x 18-bit organization array (IDT72V215)
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18-bit
IDT72V205)
IDT72V215)
IDT72V225)
IDT72V235)
IDT72V245)
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PDF
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Untitled
Abstract: No abstract text available
Text: FS98O24-DS-12_EN JUL 2011 FO Fo P R r R ro TU ef pe NE er rti ' en es ce O nl y REV. 1.2 Datasheet FS98O24 8-bit MCU with 4k program EPROM, 256-byte RAM, 2 low noise OPAMP, DMM function network,1 14-bit ADC, 4 x 20 LCD driver and RTC FS98O24 FO Fo P R r R ro TU
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FS98O24-DS-12
FS98O24
256-byte
14-bit
FS98O24
530KHZ
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM038329DQ6 IBM038329PQ6 IBM038329NQ6 IBM038329QQ6 Preliminary 256K x 32 Synchronous Graphics RAM Features • Fully synchronous; all signals registered on pos itive edge of system clock. • Internal pipelined operation; column address can be changed every clock cycle.
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IBM038329DQ6
IBM038329PQ6
IBM038329NQ6
IBM038329QQ6
100Mhz
cycles/16ms
cycles/128ms
100-picense
GD1003D
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PDF
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72284
Abstract: No abstract text available
Text: VARIABLE WIDTH CMOS SUPERSYNC FIFO 32,768 x 18 or 65,536 x 9 65,536 x 18 or 131,072 x 9 FEATURES: • Choose among the following memory organizations: IDT72284 32,768 x 18 or 65,536 x 9 IDT72294 65,536 x 18 or 131,072 x 9 • Pin-compatible with the IDT72261/72271, IDT72255/72265
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IDT72284
IDT72294
IDT72261/72271,
IDT72255/72265
IDT72264/72274
PN64-1)
PP64-1)
72284
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PDF
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diagram pc board ta 306-2
Abstract: BV EI 306 2070 PAL 0078 EL2070 EL2070C EL2070CN EL2070CS MIL-I-45208A QCX0002
Text: h ' ,~ e H K Æ t f A N C E A S A J X i '\ " E G W T £ ; C iR C J lT S EL2070C 200 MHz Current Feedback Am plifier F e a tu re s G e n e ra l D e sc r ip tio n • 200 MHz —3 dB bandwidth, Ay = 2 • Disable/enable • 12 ns settling to 0.05% The EL2070 is a wide bandwidth, fast settling monolithic am
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EL2070C
Orde16
3121SS7
diagram pc board ta 306-2
BV EI 306 2070
PAL 0078
EL2070
EL2070C
EL2070CN
EL2070CS
MIL-I-45208A
QCX0002
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PDF
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Hypertac connector
Abstract: HYPERTAC CONTACT PIN HYPERTAC CONNECTORS HYPERTAC PIN male contact solder pins hypertac hypertac right angle solder round pin connector EH101 esa 3401 K hypertac
Text: Impa opuscoli 1° 17-11-2000 14:51 Pagina 3 HYPERTAC INTERCONNECT WORLDWIDE PRESENCE TECHNICAL CHARACTERISTICS SPECIFICATION PPS per MIL-M-24519 meets ESA outgassing requirements MATERIAL Insulator Nickel plated brass or stainless steel Brass Guides 0.6 mm nominal
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MIL-M-24519
MIL-C-55302
Hypertac connector
HYPERTAC CONTACT PIN
HYPERTAC CONNECTORS
HYPERTAC PIN
male contact solder pins hypertac
hypertac
right angle solder round pin connector
EH101
esa 3401
K hypertac
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